EP0908934A2
Expired / Lapsed
EP
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Method of manufacturing a gate electrode
Assignee: Texas Instruments Inc
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Filing: 1998-10-07
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Granted: —
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Expires: 2018-10-07
Abstract
Abstract A method for forming a W-poly gate stack (110) comprising the steps of: (1) deposition of doped polysilicon (112) on a thin dielectric layer (108) covered substrate (102), (2) deposition of WNx by a CVD-based method, (3) thermal treatment to covert WNx into thermally stable barrier, WSiNx, (114) and to remove excess nitrogen and (4) deposition of W layer (116). The stack layers are then etched to form the gate electrode (110).
Inventors
- 👤 Jiong-Ping Lu
- 👤 Ming Hwang
- 👤 Dirk Noel Anderson
- 👤 Jorge A. Kittl
- 👤 Hun-Lian Tsai
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-06 06:20
CPC Classifications
H; H10; H10D; H10D64/00; H10D64/01; H10D64/013; H10D64/01302; H10D64/01332; H10D64/01336; H10D64/01344; H10D64/01304; H10D64/01306; H10D64/01308; H10D64/01312; H10D64/60; H10D64/66; H10D64/661; H10D64/68; H10D64/693
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
73 words
A method of fabricating an integrated circuit comprising the
steps of: forming a dielectric layer over a semiconductor body; forming a silicon layer over the dielectric layer; depositing a metal-nitride layer over the silicon layer
using a chemical-vapor-deposition (CVD) method; thermally treating said metal nitride layer to cause said
metal nitride layer to react with said silicon layer to form a
thermally stable barrier layer; forming a metal layer over said barrier layer.
Claim 2
Dependent Claim
23 words
The method of claim 1, further comprising the step of; nitridizing said silicon layer prior to the step of
depositing said metal-nitride layer.
Claim 3
Dependent Claim
20 words
The method of Claim 1 or Claim 2, wherein said step of
depositing said metal nitride layer comprises depositing
tungsten-nitride.
Claim 4
Independent Claim
18 words
The method of any of Claims 1 to 4 , further comprising; performing said metal layer comprises tungsten.
Claim 5
Independent Claim
27 words
The method of any Claims 1 to 4 further comprising: performing said steps of depositing the metal-nitride layer
and depositing the metal layer in the same chamber.
Claim 6
Independent Claim
52 words
The method of any preceding Claim further comprising the
steps of: patterning and etching said metal, barrier, and silicon
layers to form a gate electrode; and selectively oxidizing said gate electrode and semiconductor
body to mitigate etch damage and improve gate oxide integrity,
wherein said metal and barrier layers are not oxidized.
Claim 7
Independent Claim
101 words
The method of any preceding Claim, wherein said step of
forming said metal nitride layer comprises the following method
parameters: flowing WF 6 at a rate in the range of 2-10 sccm; flowing H 2 at a rate in the range of 100-2000 sccm; flowing N 2 at a rate in the range of 50 - 1000 sccm; flowing Ar at a rate in the range of 0-2000 sccm; using a susceptor temperature in the range of 250-500°C; using a reactor pressure in the range of 0.5 - 10 torr,
and; using a plasma power in the range of 150-500 watts.
Claim 8
Independent Claim
70 words
The method of any preceding Claim wherein said step of
forming said metal nitride layer comprises the following method
parameters: WF 6 flow of approximately 3sccm, N 2 flow of approximately 300 sccm, H 2 flow of approximately 500 sccm, Ar flow of approximately 700 sccm, susceptor temperature of approximately 360°C, reactor pressure of approximately 5 torr, RF power of approximately 375 watt; and deposition time of approximately 10 seconds.
Claim 9
Independent Claim
40 words
The method of any preceding Claim wherein said step of
thermally treating said metal nitride layer comprises the step
of: rapid thermally annealing at a temperature in the range of
800-950°C for a duration in the range of 15-120 seconds.
Claim 10
Independent Claim
43 words
The method of any preceding Claim wherein said step of
thermally treating said metal nitride layer comprises the step
of; furnace annealing under an inert ambient at a temperature
in the range of 700-950°C for a duration in the range of 5-30
minutes.
References Cited (Backward Citations)
No citation records indexed.
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