EP0881673A2
Expired / Lapsed
EP
⏱️ 0.0 years remaining
Sub-quarter-micron copper interconnections with improved electromigration resistance and reduced defect sensitivity
Assignee: International Business Machines Corp
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Filing: 1998-05-08
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Granted: —
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Expires: 2018-05-08
Abstract
Abstract A method of providing sub-half-micron copper interconnections with improved electromigration and corrosion resistance. The method includes double damascene using electroplated copper, where the seed layer is deposited by chemical vapor deposition, or by physical vapor deposition in a layer less than about 800 angstroms.
Inventors
- 👤 Leon Ashley
- 👤 Hormazdyar M. Dalal
- 👤 Du Binh Nguyen
- 👤 Hazara S. Rathore
- 👤 Richard G. Smith
- 👤 Alexander J. Swinton
- 👤 Richard A. Wachnik
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-09 02:20
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/032; H10W20/033; H10W20/035; H10W20/036; H10W20/037; H10W20/042; H10W20/043; H10W20/047; H10W20/049; H10W20/055; H10W20/056
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
107 words
A method for forming multilevel interconnections of copper lines
isolated from one another by dielectric insulation for making contacts to
electrical features in a substrate, the method comprising the steps of: (a) preparing a substrate having a dielectric insulation layer to
receive copper lines in a defined pattern; (b) subsequently depositing in said pattern a seed layer of copper by a
process selected from the group consisting of chemical vapor deposition
and physical vapor deposition, wherein said seed layer has a thickness
less than about 2000 angstroms; (c) depositing over the copper seed layer by a different process a
layer of copper to substantially fill said pattern.
Claim 2
Dependent Claim
16 words
The method of claim 1 comprising the step of depositing a metallic
liner in said pattern.
Claim 3
Dependent Claim
78 words
The method of claim 1 further including, prior to depositing the
copper seed layer, the step of: (i) depositing in said pattern a layer of an element capable of
forming an intermetallic compound with copper; and
subsequent to depositing the layer of copper which substantially fills
said pattern, the step of: (ii) heating the substrate to react the intermetallic forming
element with said layer of copper which substantially fills said pattern
to form a layer of intermetallic compound.
Claim 4
Dependent Claim
23 words
The method of claim 3 wherein the intermetallic forming element is
selected from the group consisting of hafnium, lanthanum, titanium, tin
and zirconium.
Claim 5
Independent Claim
18 words
The method of claims 1 to 4 wherein the copper seed layer is
deposited by chemical vapor deposition.
Claim 6
Dependent Claim
21 words
The method of claim 5 wherein the chemical vapor deposition copper
layer has a thickness of about 50 to 2000 angstroms.
Claim 7
Dependent Claim
21 words
The method of claim 5 wherein the chemical vapor deposition copper
layer has a thickness of about 100 to 700 angstroms.
Claim 8
Independent Claim
18 words
The method of claims 1 to 4 wherein the copper seed layer is
deposited by physical vapor deposition.
Claim 9
Dependent Claim
14 words
The method of claim 8 wherein the physical vapor deposition is by
copper sputtering.
Claim 10
Dependent Claim
14 words
The method of claim 8 wherein the physical vapor deposition is by
copper evaporation.
Claim 11
Dependent Claim
19 words
The method of claim 8 wherein the physical vapor deposition copper
layer has a thickness below about 600 angstroms.
Claim 12
Dependent Claim
18 words
The method of claim 1 wherein the copper seed layer has a thickness
less than about 800 angstroms.
References Cited (Backward Citations)
No citation records indexed.
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