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EP0834989A2 Expired / Lapsed EP ⏱️ 0.0 years remaining

A device incorporating a tunable thin film bulk acoustic resonator for performing amplitude and phase modulation

Assignee: Nokia Oyj
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Filing: 1997-10-01
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Granted: —
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Expires: 2017-10-01
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Abstract

Abstract A Bulk Acoustic Wave (BAW) resonator (20) is provided which comprises a piezoelectric layer (22); a first and second protective layer (38b,a), a first electrode (24), a second electrode (26), a bridge (also referred to as a "membrane" (28), a pair of etch windows (40a,b), an air gap (34), and a substrate (36). A portion of the piezoelectric layer (22) is positioned atop the first electrode (24), and the second electrode (26) is positioned atop the piezoelectric layer (22); thereby forming a parallel plate structure between which the piezoelectric layer (22) is allowed to resonate or vibrate. The piezoelectric layer (22) comprises, by example, zinc-oxide (ZnO), and has a thickness of 1.7 µm. The electrodes (24,26) comprise, by example, gold (Au) and have thicknesses of 0.1 µm. The membrane (28) comprises two layers (30,32) namely a top layer (30) and a bottom layer (32). The top layer (30), which preferably has a thickness of 0.6 µm and comprises poly-silicon, has a top surface which is in contact with the first electrode (24) and portions of the piezoelectric layer (22). The top layer (30) is situated atop a portion of the bottom layer (32), which preferably has a thickness of 0.4 µm and is comprised of silicon-dioxide (SiO 2 ). A portion of a bottom surface of the membrane (28) is situated adjacent to the air gap (34), which separates this portion of the membrane's bottom surface from a portion of the substrate (36). This air gap (34), which is typically filled with air but any suitable material may be used, is formed by etching a portion of the substrate (36). The air gap (34) is bounded by the etch windows (40a,b), by a portion of the first protective layer (38b), by the bottom surface portion of the membrane (28), and by inner faces (36b,c,d) of the substrate (36). The air gap (34) functions to isolate acoustic vibrations created by the piezoelectric layer (22) from the substrate (36).

Inventors

  • 👤 Juha Ella

Bibliographic Details

Application Number —
Jurisdiction EP
Data Source google_patents
Last Synchronized 2026-10-27 05:21
CPC Classifications
H; H03; H03H; H03H9/00; H03H9/15; H03H9/17; H03H9/171; H03H9/172; H03H9/175; H03C; H03C1/00; H03C1/46; H03C3/00; H03C3/42; H03H3/00; H03H3/007; H03H3/02; H03H3/04; H03H9/173; H03H9/174; H03H2003/0414; H03H2003/0421; H03H2003/0428

Claims Analysis

Total Claims: 15
Claim 1
Independent Claim 127 words
A Bulk Acoustic Wave (BAW) resonator, comprising: a substrate; resonating means; a first electrode situated adjacent to a first surface of said resonating means; a second electrode situated adjacent to a second surface of said resonating means; a membrane situated between said second electrode and said substrate; and an etch window; and a gap separating at least a portion of said substrate from at least a portion of said membrane, said gap being formed by removing a portion of said substrate through said etch window; wherein said resonating means resonates in response to an electric field produced between said first and second electrodes as a result of a voltage that is applied therebetween, and wherein said gap inhibits vibrations produced by said resonating means from said substrate.
Claim 2
Dependent Claim 22 words
A Bulk Acoustic Wave resonator as set forth in Claim 1, wherein said membrane comprises a first layer and a second layer.
Claim 3
Dependent Claim 45 words
A Bulk Acoustic Wave resonator as set forth in Claim 2, wherein said first layer comprises at least one of poly-silicon (poly-si) and aluminum nitride (AIN), and wherein said second layer comprises at least one of silicon dioxide (SiO 2 ) and gallium arsenide (GaAs).
Claim 4
Dependent Claim 23 words
A Bulk Acoustic Wave resonator according to any of the preceding claims, wherein said first and second electrodes are comprised of gold (Au).
Claim 5
Dependent Claim 27 words
A Bulk Acoustic Wave resonator according to any of the preceding claims, wherein said resonating means comprises at least one of zinc-oxide (ZnO) and aluminum nitride (AIN).
Claim 6
Dependent Claim 35 words
A Bulk Acoustic Wave resonator according to any of the preceding claims, wherein said substrate comprises at least one of silicon (Si), silicon dioxide (SiO 2 ), gallium arsenide (GaAs), glass, and a ceramic material.
Claim 7
Dependent Claim 148 words
An amplitude modulator circuit, comprising: a variable voltage generator for generating a low frequency signal having a time-varying voltage; a tunable resonator coupled to said variable voltage generator, said tunable resonator exhibiting parallel and series resonances at frequencies which shift as a function of voltage; and means for generating an RF carrier signal having a frequency that is between a parallel resonant frequency and a series resonant frequency exhibited by said tunable resonator in response to a signal output by said variable voltage generator; wherein, in response to both of a the low frequency signal being output by said variable voltage generator and an RF signal being output by said RF carrier signal generator, said tunable resonator causes the RF carrier signal to be attenuated by amounts that are a function of the time-varying voltage of the modulating low frequency signal, thereby amplitude modulating the RF carrier signal.
Claim 8
Dependent Claim 28 words
An amplitude modulator circuit as set forth in Claim 7, wherein said resonator is connected within said circuit in one of a parallel configuration and a series configuration.
Claim 9
Dependent Claim 53 words
An amplitude modulator circuit according to claim 7 or claim 8, wherein said RF carrier signal generator generates an RF carrier signal having a frequency which is within a range of frequencies over which said tunable resonator yields a minimum phase shift in response to a signal output by said variable voltage generator.
Claim 10
Dependent Claim 152 words
A phase modulator circuit, comprising: a variable voltage signal generator for generating a low frequency signal having a time-varying voltage; a tunable resonator, said tunable resonator yielding a maximum phase shift at one of a parallel resonant frequency and a series resonator frequency in response to a modulating low frequency signal output by said variable voltage signal generator; and means for generating an RF carrier signal having a frequency that is substantially equal to said one of a parallel resonant frequency and a series resonant frequency; wherein, in response to both of a modulating low frequency signal being output by said variable voltage signal generator and an RF carrier signal being output by said RF carrier signal generator, said tunable resonator causes the RF carrier signal to be phase shifted by an amount that is a function of a variation of the modulating low frequency signal voltage, thereby forming a phase-modulated signal.
Claim 11
Dependent Claim 80 words
A phase modulator circuit as set forth in Claim 10, wherein said RF carrier signal generator generates a signal having a frequency that is substantially equal to said parallel resonant frequency for a case in which said resonator is connected within said tunable circuit in a parallel configuration, and wherein said RF carrier signal generator generates a signal having said series resonant frequency for a case in which said tunable resonator is connected within said circuit in a series configuration.
Claim 12
Independent Claim 107 words
A method for amplitude modulating a signal, comprising the steps of: applying a modulating low frequency signal having a time-varying voltage to a tunable resonator, the tunable resonator exhibiting parallel and series resonances at frequencies which shift by amounts that are a function of the time-varying voltage; and applying an RF carrier signal having a frequency that is between the parallel resonant frequency and the series resonant frequency to the tunable resonator, wherein in response thereto, the tunable resonator causes the RF carrier signal to be attenuated as a function of the time-varying voltage of the modulating low frequency signal, thereby amplitude modulating said RF carrier signal.
Claim 13
Dependent Claim 39 words
A method as set forth in Claim 12, wherein the RF carrier signal has a frequency which is approximately equal to one of which the resonator yields a minimum phase shift in response to the modulating low frequency signal.
Claim 14
Independent Claim 132 words
A method for phase modulating a signal, comprising the steps of: applying a modulating low frequency signal having a time-varying voltage to a tunable resonator, the tunable resonator yielding a maximum phase shift at one of a parallel resonant frequency and a series resonant frequency in response to the modulating low frequency signal, wherein the amount of phase shift yielded is a function of a variation of the voltage of the modulating low frequency signal; and applying an RF carrier signal having a frequency that is substantially equal to said one of a parallel resonant frequency and a series resonant frequency, wherein in response thereto, the tunable resonator phase shifts the RF carrier signal by the amount of phase shift yielded by the tunable resonator, thereby phase modulating said RF carrier signal.
Claim 15
Dependent Claim 67 words
A method as set forth in Claim 14, wherein the RF carrier signal has a frequency that is substantially equal to said series resonant frequency for a case in which the tunable resonator is connected in series, and wherein the RF carrier signal has a frequency that is substantially equal to said parallel resonant frequency for a case in which the tunable resonator is connected in parallel.

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