EP0797248A2
Expired / Lapsed
EP
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Method for manufacturing a bonded wafer
Assignee: Shin-Etsu Handotai Co Ltd
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Filing: 1997-03-05
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Granted: —
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Expires: 2017-03-05
Abstract
Abstract A method for manufacturing a bonded wafer comprises the steps of: mirror-polishing a surface of first (1) and second (2) substrates, bringing the mirror-polished surfaces of the substrates (1,2) into contact with one another to join them together, and subjecting the substrates (1,2) to a heat treatment to firmly bond them. An insulating layer (3) may be formed on one surface prior to joining. One of the surfaces of the first and second substrates (1,2) prior to bonding, or one surface of the bonded wafer is subjected to polishing treatment in which irregularities on a rear surface of the one substrate or the figure of the surface of a polishing plate which is in contact with the rear surface of the one substrate exerts little influence on its surface finish.
Inventors
- 👤 Masahiro c/o Research & Development Dept. Sakai
- 👤 Masatake c/o Semiconductor Isobe Research Nakano
- 👤 Kiyoshi c/o Isobe Research Mitani
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-06 01:53
CPC Classifications
H; H10; H10P; H10P90/00; H10P90/12; H10P90/129; H10P10/00; H10P10/12; H10P10/128; H10P90/19; H10P90/1904; H10P90/1906; H10P90/1914; H10P90/126; H10P95/00; H10P95/90
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
124 words
A method for manufacturing a bonded wafer comprising the steps of: mirror-polishing a surface of a first substrate (1), mirror-polishing a surface of a second substrate (2), bringing the mirror-polished surfaces of the first and second substrates (1,2) into contact with one another to join the substrates (1,2) together, and subjecting the first and second substrates (1,2) to a heat treatment to firmly bond the substrates (1,2) together, characterised in that at least one of the mirror-polishing steps is performed by a polishing treatment in which irregularities on a rear surface of the one substrate or the figure of the surface of a polishing plate which is in contact with the rear surface of the one substrate exerts little influence on the surface finish.
Claim 2
Dependent Claim
56 words
A method for manufacturing a bonded wafer according to claim 1, in which an insulating film (3) is formed on at least one of the mirror-polished surfaces of the first and second substrates (1,2), and in which the first and second substrates (1,2) contact each other through the insulating film (3) to join the substrates together.
Claim 3
Dependent Claim
37 words
A method for manufacturing a bonded wafer as claimed in claim 1 or 2, further comprising the steps of, thinning one of the firmly bonded substrate (1,2) by wet-etching or grinding, and polishing the thinned substrate (1,2).
Claim 4
Independent Claim
159 words
A method for manufacturing a bonded wafer comprising the steps of: mirror-polishing a surface of a first substrate (1), mirror-polishing a surface of a second substrate (2), forming an insulating film (3) on at least one of the mirror-polished surfaces of the first and second substrates (1,2), bringing the mirror-polished surfaces of the first and second substrates (1,2) into contact with one another through the insulating film (3) to join the first and second substrates (1,2) together, subjecting the first and second substrates to a heat treatment to firmly bond the substrates (1,2) together, thinning one of the firmly bonded substrates, by wet-etching or grinding, and thereafter subjecting the thinned one of the bonded substrates to a polishing treatment in which irregularities on a rear surface of the one surface or the figure of the surface of a polishing plate which is in contact with the rear surface of the one substrate exerts little influence on the surface finish.
Claim 5
Dependent Claim
36 words
A method for manufacturing a bonded wafer as claimed in claim 3 or 4, further comprising the step of, further thinning the polished thinned substrate (1,2) by a vapour-phase etching to form a thin semiconductor layer.
Claim 6
Dependent Claim
62 words
A method for manufacturing a bonded wafer as claimed in claim 5, wherein the step of further thinning by a vapour-phase etching comprises, measuring the thickness distribution of the thinned substrate to make a map of its thickness distribution, and locally thinning any thicker portions thereof on the basis of the map by a vapour phase etching technique which is numerically controlled.
Claim 7
Independent Claim
25 words
A method for manufacturing a bonded wafer according to any one of the preceding claims, wherein both the first and second substrates (1,2) comprise silicon.
Claim 8
Independent Claim
37 words
A method for manufacturing a bonded wafer according to any one of the preceding claims, wherein the polishing treatment is performed by a polishing method in which the one substrate is held without fixing its rear surface.
Claim 9
Independent Claim
49 words
A method for manufacturing a bonded wafer according to any of the preceding claims, wherein the polishing treatment is either a double sided polishing method or a polishing method in which the rear surface of the one substrate (1,2) is held on a soft surface which absorbs its irregularities.
Claim 10
Independent Claim
64 words
A method for manufacturing a bonded wafer according to any one of the preceding claims, wherein the polishing treatment is one in which the front surface of the one substrate (1,2) is polished with a polishing pad while the substrate is held without fixing in a hole of a substrate supporting member (42) having a diameter slightly larger than that of the substrate (1,2).
References Cited (Backward Citations)
No citation records indexed.
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