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EP0780853A1 Expired / Lapsed EP ⏱️ 0.0 years remaining

Inductor structure

Assignee: Agilent Technologies Inc
•
Filing: 1996-12-20
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Granted: —
•
Expires: 2016-12-20
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Abstract

Abstract An inductor structure (30) with improved Q compatible with typical integrated circuit fabrication includes a spiral inductor (12) with a conductive plane (32) between the resistive substrate (20) of the integrated circuit and the spiral inductor (12) which reduces the power loss of the inductor. A pattern (62-64) of segments may be formed in the conductive material (32) to prevent eddy currents from flowing through the conductive plane and reducing the inductance of the spiral inductor. The Q of the inductor can be enhanced by optimizing the pattern (62-64) in which the segmented conductive plane (32) is formed. The segmented conductive plane (32) may be fabricated out of metal, polysilicon or a heavily-doped region of the substrate.

Inventors

  • 👤 Andrew Z. Grzegorek
  • 👤 William J. Mcfarland

Bibliographic Details

Application Number —
Jurisdiction EP
Data Source google_patents
Last Synchronized 2026-11-07 22:45
CPC Classifications
H; H01; H01F; H01F17/00; H01F17/0006; H01F27/00; H01F27/34; H01F27/36; H01F27/363

Claims Analysis

Total Claims: 10
Claim 1
Independent Claim 37 words
An integrated circuit inductor structure comprising a resistive substrate (20); a spiral inductor (12); a conductive layer (32) located between the spiral inductor and the substrate; and means for insulating the spiral inductor from the conductive layer.
Claim 2
Dependent Claim 30 words
An inductor structure as recited in claim 1, wherein the conductive layer (32) includes a plurality of conductive segments and located to minimize eddy currents flowing through the conductive layer.
Claim 3
Dependent Claim 61 words
An inductor structure as recited in claim 2, wherein the conductive layer additionally includes a perimeter region electrically connected to a fixed low impedance reference voltage, the conductive segments extending from the perimeter region towards a center portion of the planar inductor structure so that electric field current induced in the conductive layer flows a minimized distance through the conductive layer.
Claim 4
Dependent Claim 23 words
An inductor structure as recited in any preceding claim, wherein the conductive layer comprises metal, polysilicon or a heavily-doped region of the substrate.
Claim 5
Dependent Claim 42 words
An inductor structure as recited in any preceding claim, wherein the spiral inductor comprises a first part on a first metallisation layer and a second part on a second metallisation layer wherein the first part and the second part are electrically connected.
Claim 6
Dependent Claim 20 words
An inductor structure as recited in claim 5, wherein the first part and the second part are connected in parallel.
Claim 7
Dependent Claim 20 words
An inductor structure as recited in claim 5, wherein the first part and the second part are connected in series.
Claim 8
Independent Claim 53 words
A method of increasing the Q of an integrated circuit inductor structure, comprising the steps of providing an integrated structure including a substrate (20), a spiral inductor (12) and an insulating layer (18) between the substrate and the spiral inductor; and interposing a conductive layer (32) between the substrate and the insulating layer.
Claim 9
Dependent Claim 14 words
A method as in claim 8, comprising a step of segmenting the conductive layer.
Claim 10
Dependent Claim 47 words
A method as in claim 9, comprising the steps of providing a fixed low impedance potential electrically connected to a perimeter region of the conductive layer; and extending the segmenting of the conductive layer from the perimeter region towards a center portion of the planar inductor structure.

References Cited (Backward Citations)

JPS62154607A Cited
US5373112A Cited
EP0656636A1 Cited
US5461353A Cited

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