EP0767488A2
Expired / Lapsed
EP
⏱️ 0.0 years remaining
A method of fabricating a DRAM with increased capacitance
Assignee: Texas Instruments Inc
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Filing: 1996-10-07
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Granted: —
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Expires: 2016-10-07
Abstract
Abstract A method for forming a dynamic random access memory with increased capacitance includes preparing (36) ultra-fine particles in a microemulsion. The particles are deposited (38) on the lower electrode layer of the memory cell. A micro-villus pattern is then formed (40) on the lower electrode layer, using the particles as a mask. A layer of HSG polysilicon may then be deposited (42) on the micro-villus pattern. A dielectric and upper electrode are then formed (44) overlying the lower electrode to form a storage capacitor for the dynamic random access memory.
Inventors
- 👤 Darius L. Crenshaw
- 👤 Promod Kumar
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-30 10:18
CPC Classifications
H; H10; H10D; H10D1/00; H10D1/01; H10D1/041; H10D1/043; H10B; H10B12/00; H10B12/01; H10B12/02; H10B12/03; H10B12/033; H10B12/30; H10B12/31; H10B12/318; H10D1/60; H10D1/68; H10D1/692; H10D1/711; H10D1/714; H10P; H10P50/00; H10P50/71; H10D1/712; H10D1/716; Y; Y10; Y10S; Y10S977/00; Y10S977/70; Y10S977/773; Y10S977/84; Y10S977/888; Y10S977/89; Y10S977/891; Y10S977/902; Y10S977/932; Y10S977/943
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
45 words
A method for forming a dynamic random access memory cell having a storage capacitor, comprising: forming a lower electrode layer; forming a micro-villus pattern on the lower electrode layer; forming a dielectric overlying the micro-villus pattern; and forming an upper electrode of the storage capacitor.
Claim 2
Dependent Claim
37 words
The method of Claim 1, further comprising: precipitating a plurality of particles in a microemulsion mixture; depositing the particles on the lower electrode layer; and using the deposited particles as a mask to form the micro-villus pattern.
Claim 3
Dependent Claim
20 words
The method of Claim 1 or Claim 2, further comprising forming a layer of rough polysilicon on the micro-villus pattern.
Claim 4
Independent Claim
17 words
The method of any preceding Claim, wherein the step of depositing the particles comprises depositing quartz particles.
Claim 5
Independent Claim
20 words
The method of any of Claims 1 to 3, wherein the step of depositing the particles comprises depositing silicon particles.
Claim 6
Independent Claim
28 words
The method of any preceding claim, wherein the step of depositing particles comprises depositing particles that are substantially in the range of 5 to 50 nanometers in diameter.
Claim 7
Independent Claim
17 words
The method of any preceding claim, further comprising depositing the particles substantially with a Langmuir-Blodgett film technique.
Claim 8
Independent Claim
27 words
The method of any preceding claim, further comprising forming an access transistor coupled to the lower electrode layer, the access transistor allowing access to the storage capacitor.
Claim 9
Independent Claim
26 words
The method of any preceding claim further comprising: forming a mask layer substantially overlying the lower electrode layer prior to the step of depositing the particles.
Claim 10
Dependent Claim
21 words
The method of Claim 9, further comprising: using the mask layer to form the micro-villus pattern on the lower electrode layer.
Claim 11
Dependent Claim
24 words
A dynamic random access memory cell having a least one storage capacitor formed according to the method of any of Claims 1 to 10.
References Cited (Backward Citations)
No citation records indexed.
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