EP0759481A1
Expired / Lapsed
EP
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Method of depositing a stable fluorinated TEOS film
Assignee: Novellus Systems Inc
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Filing: 1996-06-13
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Granted: —
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Expires: 2016-06-13
Abstract
Abstract A plasma enhanced chemical vapor deposition parallel plate reactor is provided with a dual frequency RF power source. The low frequency RF power source provides more power than the high frequency power source during deposition of a fluorine-doped silicon dioxide film from TEOS, oxygen, and fluorine. The ratio of oxygen partial pressure to TEOS partial pressure is substantially high. The resulting film is stable and has excellent step coverage and planarity.
Inventors
- 👤 Daniel A. Carl
- 👤 Shari Schuchmann
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-09 02:10
CPC Classifications
C; C30; C30B; C30B25/00; H; H10; H10P; H10P14/00; H10P14/60; H10P14/69; H10P14/692; H10P14/6921; H10P14/6922; H10P14/6924; C23; C23C; C23C16/00; C23C16/22; C23C16/30; C23C16/40; C23C16/401; C23C16/402; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6334; H10P14/6336
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
78 words
A method of depositing a plasma enhanced chemical vapor deposition fluorine-doped silicon dioxide film, comprising: maintaining a substrate in a plasma-enhanced chemical vapor deposition reactor; introducing a gas mixture comprising a TEOS component, an oxygen component, and a fluorine component into the reactor, wherein the ratio of oxygen partial pressure to TEOS partial pressure is substantially high; and applying alternating current energy to the gas mixture to excite the gas mixture into a plasma proximate to the substrate.
Claim 2
Dependent Claim
30 words
A method as in claim 1 wherein the TEOS component is gasified TEOS, the oxygen component is O 2 , and the fluorine component is C 2 F 6 .
Claim 3
Dependent Claim
29 words
A method as in claim 1 wherein dual RF frequency energy is used, the amount of low frequency energy being substantially greater than the amount of high frequency energy.
Claim 4
Dependent Claim
22 words
A method as in claim 1 wherein the ratio of oxygen partial pressure to TEOS partial pressure is greater than about 20:1.
Claim 5
Dependent Claim
33 words
A method of process integration comprising depositing a stable, low dielectric constant film using the steps of claim 1 and excluding depositing an encapsulation layer associated with the stable, low dielectric constant film.
References Cited (Backward Citations)
EP0367004A1
Cited
GB2256967A
Cited
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