EP0754785A1
Expired / Lapsed
EP
⏱️ 0.0 years remaining
Method of manufacturing semiconductor mirror wafers
Assignee: Shin-Etsu Handotai Co Ltd
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Filing: 1996-07-19
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Granted: —
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Expires: 2016-07-19
Abstract
Abstract A method of manufacturing semiconductor mirror wafers includes a double side primary mirror polishing step and a single side final mirror polishing step. The method having the double side mirror polishing step is capable of higher flatness level wafer processing, suppression of fine dust or particles, thereby to increase the yield of semiconductor devices, higher productivity due to simplification of processes, higher quality processing with lower manufacturing cost than conventional methods.
Inventors
- 👤 Hisashi Masumura
- 👤 Kiyoshi Suzuki
- 👤 Hideo Kudo
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-03 19:11
CPC Classifications
C; C30; C30B; C30B33/00; H; H10; H10P; H10P52/00
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
69 words
A method of manufacturing semiconductor mirror wafers which comprises the steps of: (a) forming wafers of thin disc shape by slicing a single crystal ingot; (b) chamfering a peripheral edge portion of the sliced wafer; (c) double side primary mirror polishing of both the front and back sides of the chamfered wafer; and (d) single side final mirror polishing of the front side of the double side polished wafer.
Claim 2
Independent Claim
89 words
A method of manufacturing semiconductor mirror wafers which comprises the steps of: (a) forming wafers of thin disc shape by slicing a single crystal ingot; (b) chamfering a peripheral edge portion of the sliced wafer; (c) double side primary mirror polishing of both the front and back sides of the chamfered wafer; (d) single side secondary mirror polishing of the front side of the double side primary mirror polished wafer; and (e) single side final mirror polishing of the front side of the single side secondary mirror polished wafer.
Claim 3
Dependent Claim
30 words
A method of manufacturing semiconductor mirror wafers according to claim 1 or 2, wherein a polishing stock removal in the double side primary mirror polishing is at least 60 µm.
Claim 4
Dependent Claim
33 words
A method of manufacturing semiconductor mirror wafers according to claim 1 or 2, wherein a polishing pad used in the double side primary mirror polishing has Asker C-scale hardness of at least 80.
References Cited (Backward Citations)
EP0588055A2
Cited
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