EP0747939A2
Expired / Lapsed
EP
⏱️ 0.0 years remaining
Copper-based metal polishing solution and method for manufacturing a semiconductor device
Assignee: Toshiba Corp
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Filing: 1996-06-07
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Granted: —
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Expires: 2016-06-07
Abstract
Abstract A copper-based metal polishing solution comprises a water-soluble organic acid capable of reaction with copper to form a copper complex compound which is unlikely to be dissolved in water and has a mechanical strength lower than that of copper. The polishing solution also contains polishing abrasive grains and water. The polishing solution of the particular composition does not dissolve at all copper or a copper alloy when a copper or copper alloy film is immersed in the polishing solution, and permits polishing the copper or copper alloy film at a practical rate in the polishing step by using a polishing apparatus.
Inventors
- 👤 Hideaki c/o Intellect.Property Div. Hirabayashi
- 👤 Naoaki c/o Intellectual Property Div. Sakurai
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-02 20:03
CPC Classifications
H; H10; H10P; H10P52/00; H10P52/40; H10P52/403; C; C09; C09G; C09G1/00; C09G1/02
Claims Analysis
Total Claims: 31
Claim 1
Independent Claim
44 words
A copper-based metal polishing solution, comprising a water-soluble organic acid capable of reaction with copper to form a copper complex compound which is unlikely to be dissolved in water and has a mechanical strength lower than that of copper, polishing abrasive grains and water.
Claim 2
Dependent Claim
17 words
The polishing solution according to claim 1, characterized in that the organic acid is 2-quinoline carboxylic acid.
Claim 3
Dependent Claim
24 words
The polishing solution according to claim 1, characterized in that the organic acid is contained in an amount of at least 0.1% by weight.
Claim 4
Dependent Claim
24 words
The polishing solution according to claim 3, characterized in that the organic acid is contained in an amount of 0.3 to 1.2% by weight.
Claim 5
Dependent Claim
33 words
The polishing solution according to claim 1, characterized in that the polishing abrasive grains are formed of at least one material selected from the group consisting of silica, zirconia, cerium oxide and alumina.
Claim 6
Dependent Claim
24 words
The polishing solution according to claim 1, characterized in that the polishing abrasive grains have an average grain diameter of 0.02 to 0.1 µm.
Claim 7
Dependent Claim
25 words
The polishing solution according to claim 1, characterized in that the polishing abrasive grains are contained in an amount of 1 to 20% by weight.
Claim 8
Dependent Claim
17 words
The polishing solution according to claim 1, further comprising a promotor for forming a copper complex compound.
Claim 9
Dependent Claim
24 words
The polishing solution according to claim 8, characterized in that an oxidizing agent is used as the promotor for forming a copper complex compound.
Claim 10
Dependent Claim
16 words
The polishing solution according to claim 9, characterized in that the oxidizing agent is hydrogen peroxide.
Claim 11
Dependent Claim
33 words
The polishing solution according to claim 9, characterized in that the oxidizing agent is used in an amount at least 10 times as much by weight as the amount of the organic compound.
Claim 12
Dependent Claim
11 words
The polishing solution according to claim 1, further comprising a surfactant.
Claim 13
Dependent Claim
21 words
The polishing solution according to claim 12, characterized in that the surfactant is sodium dodecyl sulfate, which is an anionic surfactant.
Claim 14
Dependent Claim
22 words
The polishing solution according to claim 12, characterized in that the surfactant is added in an amount of at least 1 mol/liter.
Claim 15
Independent Claim
177 words
A method for manufacturing a semiconductor device, characterized by comprising the steps of: forming at least one member selected from the group consisting of a trench (23) and an opening, the trench (23) and opening conforming in shape with a wiring layer, in an insulating film (22) formed on a semiconductor substrate (21); depositing a wiring material selected from the group consisting of elemental copper and a copper alloy on the insulating film having at least one of the trench (23) and opening formed therein; and polishing the deposited wiring material film (25) until a surface of the insulating film (22) is exposed by using a polishing solution comprising a water-soluble organic acid capable of reaction with copper to form a copper complex compound which is unlikely to be dissolved in water and has a mechanical strength lower than that of copper, polishing abrasive grains and water, thereby forming a buried wiring layer (26) in the insulating film (22) such that surfaces of the wiring layer (26) and the insulating film (22) are level with each other.
Claim 16
Dependent Claim
38 words
The method according to claim 15, characterized in that a barrier layer is formed on the insulating film before the step of forming at least one member selected from the group consisting of a trench and an opening.
Claim 17
Dependent Claim
30 words
The method according to claim 16, characterized in that the barrier layer is formed of a material selected from the group consisting of TiN, Ti, Nb, W and CuTa alloy.
Claim 18
Dependent Claim
32 words
The method according to claim 15, characterized in that the copper alloy is selected from the group consisting of a Cu-Si alloy, a Cu-Al alloy, a Cu-Si-Al alloy, and a Cu-Ag alloy.
Claim 19
Dependent Claim
21 words
The method according to claim 15, characterized in that the organic acid contained in the polishing solution is 2-quinoline carboxylic acid.
Claim 20
Dependent Claim
27 words
The method according to claim 15, characterized in that the organic acid is contained in the polishing solution in an amount of at least 0.1% by weight.
Claim 21
Dependent Claim
27 words
The method according to claim 15, characterized in that the organic acid is contained in the polishing solution in an amount of 0.3 to 1.2% by weight.
Claim 22
Dependent Claim
37 words
The method according to claim 15, characterized in that the polishing abrasive grains contained in the polishing solution are formed of at least one material selected from the group consisting of silica, zirconia, cerium oxide and alumina.
Claim 23
Dependent Claim
28 words
The method according to claim 15, characterized in that the polishing abrasive grains contained in the polishing solution have an average grain diameter of 0.02 to 0.1 µm.
Claim 24
Dependent Claim
28 words
The method according to claim 15, characterized in that the polishing abrasive grains are contained in the polishing solution in an amount of 1 to 20% by weight.
Claim 25
Dependent Claim
22 words
The method according to claim 15, characterized in that the polishing solution further comprises a promotor for forming a copper complex compound.
Claim 26
Dependent Claim
23 words
The method according to claim 25, characterized in that an oxidizing agent is used as the promotor for forming a copper complex compound.
Claim 27
Dependent Claim
15 words
The method according to claim 26, characterized in that the oxidizing agent is hydrogen peroxide.
Claim 28
Dependent Claim
37 words
The method according to claim 26, characterized in that the oxidizing agent is used in an amount at least 10 times as much by weight as the amount of the organic compound contained in the polishing solution.
Claim 29
Dependent Claim
16 words
The method according to claim 15, characterized in that the polishing solution further comprises a surfactant.
Claim 30
Dependent Claim
20 words
The method according to claim 29, characterized in that the surfactant is sodium dodecyl sulfate, which is an anionic surfactant.
Claim 31
Dependent Claim
21 words
The method according to claim 29, characterized in that the surfactant is added in an amount of at least 1 mol/liter.
References Cited (Backward Citations)
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