EP0731492A2
Expired / Lapsed
EP
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Method of growing a single crystal thin film with a uniform thickness, in the vapor phase
Assignee: Shin-Etsu Handotai Co Ltd
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Filing: 1996-03-08
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Granted: —
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Expires: 2016-03-08
Abstract
Abstract In the preparation stage before the manufacturing of the single crystal thin film 13, growth conditions are determined by conducting a vapor phase growth without rotating the rotatable holder 14 on its axis and making adjustments such that the growth rate of the single crystal thin film 13 is laterally asymmetric with respect to the virtual center axis on the holder 14 parallel to the feeding direction of the source material gas 19, and then said single crystal thin film is manufactured based on said growth conditions.
Inventors
- 👤 Takatoshi c/o Isobe Kojo Nagoya
- 👤 Hisashi c/o Isobe Kojo Kashino
- 👤 Hitoshi c/o Handotai Isobe Kenkyusho Habuka
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-02 17:47
CPC Classifications
C; C30; C30B; C30B25/00; C30B25/02; C30B25/14
Claims Analysis
Total Claims: 3
Claim 1
Independent Claim
109 words
A method of manufacturing a single crystal thin film which comprises vapor phase growth of a single crystal thin film on a semiconductor single crystal substrate placed on a holder for rotating on its own axis in a reactor vessel by feeding the source material gas to said semiconductor single crystal substrate: wherein growth conditions are determined by conducting a vapor phase growth of a single crystal thin film on said semiconductor single crystal substrate without rotating said holder on its axis in the preparation stage before the manufacturing of said single crystal thin film; and then said single crystal thin film is manufactured based on said growth conditions.
Claim 2
Dependent Claim
54 words
The method of manufacturing a single crystal thin film of Claim 1 wherein, in said preparation stage, the growth rate of the single crystal thin film is adjusted to be laterally asymmetric with respect to the virtual center axis on said holder parallel to the direction in which the source material gas is fed.
Claim 3
Dependent Claim
56 words
The method of manufacturing a single crystal thin film of Claim 2 wherein two growth rate measurements of said single crystal thin film taken at the right and left ends of the semiconductor crystal substrate with respect to said center axis are such that one of the growth rates is 1.3-1.8 times greater than the other.
References Cited (Backward Citations)
No citation records indexed.
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