Piezoelectric oscillator, voltage-controlled oscillator, and production method thereof

Claim 2

A piezoelectric oscillator according to claim 1, wherein said single unit is molded with a resin in such a manner that the thickness of the resin disposed on the upper side of the case of said piezoelectric resonator is equal to that on the lower side of the case of said piezoelectric resonator.

Claim 3

A piezoelectric oscillator according to claim 1 or 2, wherein the surface of the case of said piezoelectric resonator is exposed to the outside of said single unit.

Claim 4

A piezoelectric oscillator according to any one of claims 1 through 3, wherein portions of said case along the major axis of the ellipse or linear parts of the track shape of said case have a greater thickness than the other portions of the case.

Claim 5

A piezoelectric oscillator according to any one of claims 1 through 4, wherein said single unit is molded with a molding resin having a bending strength greater than 2 kg/mm 2 (20 MPa) at a high temperature of 240°C to 260°C.

Claim 6

A piezoelectric oscillator according to any one of claims 1 through 5, wherein said lead frame is provided with a supporting lead terminal for supporting the single unit molded with a resin.

Claim 7

A piezoelectric oscillator according to any one of claims 1 through 6, wherein multiple signal input lead terminals connected to said semiconductor integrated circuit are provided, said signal input lead terminals are disposed in a line perpendicular to the major dimension of said piezoelectric resonator at locations at the side of said semiconductor integrated circuit opposite to said piezoelectric resonator.

Claim 8

A piezoelectric oscillator according to any one of claims 1 through 7, wherein input/output pads are formed in peripheral areas on three sides of said semiconductor integrated circuit in such a manner that no pads are formed on the side facing said piezoelectric resonator.

Claim 9

A piezoelectric oscillator according to any one of claims 1 through 8, wherein said piezoelectric resonator is a quartz-crystal resonator.

Claim 11

A method of producing a piezoelectric oscillator according to claim 10, wherein, in said step of applying a signal to said signal input lead terminal, data is applied via said signal input lead terminal and an NC terminal or OE terminal.

Claim 12

A method of producing a piezoelectric oscillator according to claim 10 or 11, wherein, in said step of applying a signal to said signal input lead terminal, the frequency is adjusted for a plurality of piezoelectric oscillators remaining connected to said lead frame.

Claim 13

A voltage-controlled oscillator including a semiconductor integrated circuit, a piezoelectric resonator, and another electronic component, wherein: said semiconductor integrated circuit is mounted on an island of a lead frame, said semiconductor integrated circuit being electrically connected to inner leads of said lead frame via a wire-bonded wire and storing data controlling the oscillation frequency of said voltage-controlled oscillator; said piezoelectric resonator having a case with a cross-section of an elliptic shape or a track shape (combination of a rectangle and two semicircles) is disposed adjacent to said semiconductor integrated circuit; a lead of said piezoelectric resonator is electrically connected to a part of said lead frame; said electronic component is mounted on a land of said lead frame; a signal input lead terminal is electrically connected to said semiconductor integrated circuit so that data stored in said semiconductor integrated circuit is controlled via said signal input lead terminal such that said oscillation frequency is adjustable by a signal applied to said signal input lead terminal; and said semiconductor integrated circuit, said piezoelectric resonator, said electronic component, and said lead frame forming a single unit in such a manner that the outer part of said inner leads and said signal input lead terminal are exposed to the outside.

Claim 14

A voltage-controlled oscillator according to claim 13, wherein said single unit is molded with a resin in such a manner that the thickness of the resin disposed on the upper side of the case of said piezoelectric resonator is equal to that on the lower side of the case of said piezoelectric resonator.

Claim 15

A voltage-controlled oscillator according to claim 13 or 14, wherein the surface of the case of said piezoelectric resonator is exposed to the outside of said single unit.

Claim 16

A voltage-controlled oscillator according to any one of claims 13 through 15, wherein portions of said case along the major axis of the ellipse or linear parts of the track shape of said case have a greater thickness than the other portions of the case.

Claim 17

A voltage-controlled oscillator according to any one of claims 13 through 16, wherein said single unit is molded with a molding resin having a bending strength greater than 2 kg/mm 2 (20 MPa) at a high temperature of 240°C to 260°C.

Claim 18

A voltage-controlled oscillator according to any one of claims 13 through 17, wherein said lead frame is provided with a supporting lead terminal for supporting the single unit molded with a resin.

Claim 19

A voltage-controlled oscillator according to any one of claims 13 through 18, wherein said signal input lead terminals are disposed in a line perpendicular to the major dimension of said piezoelectric resonator at locations at the side of said semiconductor integrated circuit opposite to said piezoelectric resonator.

Claim 20

A voltage-controlled oscillator according to any one of claims 13 through 19, wherein input/output pads are formed in peripheral areas on three sides of said semiconductor integrated circuit in such a manner that no pads are formed on the side facing said piezoelectric resonator.

Claim 21

A voltage-controlled oscillator according to any one of claims 13 through 20, wherein said piezoelectric resonator is a quartz-crystal resonator.

Claim 22

A voltage-controlled oscillator, according to any one of claims 13 through 21, wherein said electronic component is a variable-capacitance diode.

Claim 24

A method of producing a voltage-controlled oscillator according to claim 23, wherein, in said step of applying a signal to said signal input lead terminal, data is applied via said signal input lead terminal and VC terminal.

Claim 25

A method of producing a voltage-controlled oscillator according to claim 23 or 24, wherein, in said step of applying a signal to said signal input lead terminal, the frequency is adjusted for a plurality of voltage-controlled oscillators remaining connected to said lead frame.

Claim 26

A voltage-controlled oscillator according to claim 22, wherein said piezoelectric resonator and said variable-capacitance diode are connected in series between the input and output terminals of an inverter of said semiconductor integrated circuit; a DC- blocking capacitor is disposed between said variable-capacitance diode and said inverter; the node between said piezoelectric resonator and said variable-capacitance diode is connected to ground via a bias resistor; and a control terminal is connected to the node between said variable-capacitance diode and said DC-blocking capacitor, whereby said oscillation frequency of said voltage-controlled oscillator may be controlled by a voltage applied to said control terminal.