EP0724294A2
Expired / Lapsed
EP
⏱️ 0.0 years remaining
Semiconductor device mounted on tub having central slit pattern and peripheral slit pattern for absorbing thermal stress
Assignee: NEC Electronics Corp
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Filing: 1996-01-24
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Granted: —
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Expires: 2016-01-24
Abstract
Abstract A plurality of slits (11i/11n, 11j/11o, 11k/11p, 11m/11q) are formed in a tub (11a) of a lead-frame (11) for mounting a semiconductor chip (10), and are arranged in such a manner as to nearly equalize the length of peripheral sub-areas (11ha/11hh/11ha) of the tub uncovered with the semiconductor chip, thereby effectively absorbing a shrinkage and an elongation due to a difference in thermal expansion coefficient among the tub (11a), the semiconductor chip (10) and a plastic package hermetically sealing the semiconductor chip. <IMAGE>
Inventors
- 👤 Takahiro c/o Nec Corporation Eguchi
- 👤 Yasuhiro c/o Nec Corporation Suzuki
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-04 13:29
CPC Classifications
H; H10; H10W; H10W40/00; H10W70/00; H10W70/40; H10W70/411; H10W72/00; H10W72/071; H10W72/073; H10W72/07351; H10W72/07353; H10W72/30; H10W72/331; H10W72/334; H10W72/851; H10W72/874; H10W72/884; H10W72/90; H10W72/931; H10W74/00; H10W90/00; H10W90/701; H10W90/731; H10W90/736; H10W90/751; H10W90/756
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
296 words
A semiconductor device comprising: a semiconductor chip (10; 20) having an electric circuit; a supporting means (11; 21) including a tub (11a; 21a) having a major surface defined by peripheral edges (21f/21g/21h/21i) and mounting said semiconductor chip (10; 20), a first slit pattern (11c/11d/11e/11f; 21f/21g/21h/21i) open to said major surface and a reverse surface of said tub (11a; 21a) and formed in said tub (11a; 21a) so as to divide said major surface into a central area (11g; 21j) and a peripheral area (11h; 21k), said semiconductor chip (10; 20) occupying said central area (11g; 21j) and an inner peripheral sub-area of said peripheral area (10h; 21k), and a slit group inwardly projecting from said peripheral edges; and a sealing means (12; 22) provided around said semiconductor chip (10; 20) mounted on said tub (10a; 21a) for preventing said semiconductor chip (10; 20) from contaminants, characterized in that said slit group includes a plurality of slit sub-groups (11i/11n, 11j/11o, 11k/11p, 11m/11q; 21ma/21mb, 21na/21nb, 21oa/21ob, 21pa/21pb) respectively associated with said peripheral edges (21f-21i), each of said plurality of slit sub-groups (11i/11n, 11j/11o, 11k/11p, 11m/11q; 21ma/21mb, 21na/21nb, 21oa/21ob, 21pa/21pb) having a plurality of slits inwardly projecting from associated one of said peripheral edges through said outer peripheral sub-area into said inner peripheral sub-area so as to divide a part of said outer peripheral sub-area along said associated one of said peripheral edges into a plurality of sections (11hg/11hh/11ha), said first slit pattern (11c-11f; 21f-21i) and said plurality of slit sub-groups (11i/11n, 11j/11o, 11k/11p, 11m/11q; 21ma/21mb, 21na/21nb, 21oa/21ob, 21pa/21pb) at least twice intercepting a force in a direction of a straight line between two of said peripheral edges (21f/21g or 21h/21i) opposite to each other and a force in a direction of a diagonal line on said major surface
Claim 2
Dependent Claim
32 words
The semiconductor device as set forth in claim 1, in which said plurality of sections (11hg/11hh/11ha) are nearly equal in length in a direction of said associated one of said peripheral edges.
Claim 3
Dependent Claim
48 words
The semiconductor device as set forth in claim 1 or 2, in which two slits are incorporated in each of said plurality of slit sub-groups (11i/11n, 11j/11o, 11k/11p, 11m/11q; 21ma/21mb, 21na/21nb, 21oa/21ob, 21pa/21pb) so as to divide said part of said outer peripheral sub-area into three sections (11ha/11hh/11ha).
Claim 4
Dependent Claim
31 words
The semiconductor device as set forth in claim 3, in which said three sections (11ha/11hh/11ha) are nearly equal in length in a direction of said associated one of said peripheral edges.
Claim 5
Dependent Claim
143 words
The semiconductor device as set forth in claim 1, in which said first slit pattern has a first slit (11f) in parallel to one of said peripheral edges, a second slit (11e) spaced in parallel to said first slit (11f) in a staggered manner, a third slit (11d) perpendicular to said first and second slits (11f/11e) and a fourth slit (11c) spaced in parallel to said third slit (11d) in said staggered manner so as to shaped said central area (11g) in a rectangular configuration, said first to fourth slits having respective portions projecting into said peripheral area, said plurality of slits of one of said plurality of slit sub-groups (11i/11n) extending in parallel to one of said respective portions so as to form a crank-shaped section connecting one (11hg) of said plurality of sections to another (11hh) of said plurality of sections.
Claim 6
Dependent Claim
80 words
The semiconductor device as set forth in claim 1, further comprising a second slit pattern (21q-21t) open to said major surface and said reverse surface and formed in said peripheral area so that said first slit pattern (21f-21i), said second slit pattern (21q-21t) and said plurality of slit sub-groups (21ma/21mb, 21na/21nb, 21oa/21ob, 21pa/21pb) at least twice intercept said force in said direction of said straight line and said force in said direction of said diagonal line on said major surface.
Claim 7
Dependent Claim
58 words
The semiconductor device as set forth in claim 6, in which two pairs of slits (21f/21g and 21h/21i) constitute said first slit pattern so as to shape said central area (21j) into a rectangular configuration, and four cross-shaped slits (21q-21t) are provided outside four corners of said central area (21j) so as to form said second slit pattern.
Claim 8
Dependent Claim
99 words
The semiconductor device as set forth in claim 7, in which each (21q) of said cross-shaped slits has a first slit (21u) perpendicular to one (21f) of said peripheral edges and a second slit (21v) crossing said first slit (21u) and extending in parallel to said one (21f) of said peripheral edges, one of said plurality of slits (21ma/21mb) projecting from said one (21f) of said peripheral edges in parallel to said first slit (21u) toward said second slit (21v) so as to form a crank-shaped section (21w) connecting adjacent two of said plurality of sections to each other.
References Cited (Backward Citations)
No citation records indexed.
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