EP0709877A1
Expired / Lapsed
EP
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Plasma processing method
Assignee: Hitachi Ltd
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Filing: 1994-05-20
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Granted: —
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Expires: 2014-05-20
Abstract
Abstract A method of cleaning an etching chamber, with a high throughput, of a plasma processing apparatus for etching by use of hydrogen bromide (HBr) as an etching gas while holding a wafer on an electrode by electrostatic chuck. When the static charge on the wafer electrostatically chucked on the electrode is eliminated after the completion of the etching, O₂ gas is introduced into the etching chamber from a gas flow-rate controller. A plasma of O₂ gas is generated to cause the electric charge on the wafer to flow to the earth through the plasma, and at the same time, the interior of the etching chamber is cleaned.
Inventors
- 👤 Go 428-1 Higashitoyoi SAITO
- 👤 Motohiko 260 Senboudai YOSHIGAI
- 👤 Kenji 3-290-1-4-324 Matsugaoka FUJIMOTO
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-09 08:53
CPC Classifications
H; H10; H10P; H10P50/00; H10P70/00; H10P70/20; H10P70/27; H10P70/273; H01; H01J; H01J37/00; H01J37/32; H01J37/32431; H01J37/32798; H01J37/32853; H01J37/32862; H10P50/20; H10P50/26; H10P50/264; H10P50/266; H10P50/267; Y; Y10; Y10S; Y10S438/00; Y10S438/905
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
74 words
A plasma processing method for performing an etching process on a wafer while holding the wafer on an electrode in a chamber by electrostatic attraction, wherein the same method is characterized by comprising the step of eliminating a residual electrostatic attractive force remaining on said wafer after completion of said etching process through use of a gas plasma of O₂ gas to deelectrify residual electric charge on said wafer by discharging into said plasma.
Claim 2
Dependent Claim
24 words
The plasma processing method according to claim 1, wherein said etching process is characterized by comprising utilization of hydrogen bromide as an etching gas.
Claim 3
Dependent Claim
70 words
A plasma processing method for performing an etching process on a wafer while holding the wafer on an electrode in a chamber by electrostatic attraction, wherein the same method is characterized by comprising the step of post-processing a film of a silicon-containing material using a plasma of a mixture gas containing O₂ and CHF₃ continuously in vacuum after said film has been etched using a plasma of a bromine-containing gas.
Claim 4
Dependent Claim
20 words
The plasma processing method according to claim 3, wherein said bromine-containing gas is a mixture gas of HBr and O₂.
Claim 5
Dependent Claim
19 words
The plasma processing method according to claim 3, wherein said film of the silicon-containing material is a poly-silicon material.
Claim 6
Dependent Claim
22 words
The plasma processing method according to claim 1, wherein said film of the silicon-containing material is formed to have a step-wise structure.
Claim 7
Dependent Claim
70 words
A plasma processing method for performing an etching process on a wafer while holding the wafer on an electrode in a chamber by electrostatic attraction, wherein the same method is characterized by comprising the step of post-processing a film of a silicon-containing material using a plasma of a mixture gas containing O₂ and CHF₃ continuously in vacuum after said film has been etched using a plasma of a chlorine-containing gas.
Claim 8
Dependent Claim
19 words
The plasma processing method according to claim 7, wherein said film of the silicon-containing material is a poly-silicon material.
Claim 9
Dependent Claim
22 words
The plasma processing method according to claim 7, wherein said film of the silicon-containing material is formed to have a step-wise structure.
References Cited (Backward Citations)
No citation records indexed.
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