EP0689086A2
Expired / Lapsed
EP
⏱️ 0.0 years remaining
Display unit
Assignee: Canon Inc
•
Filing: 1995-06-19
•
Granted: —
•
Expires: 2015-06-19
Abstract
Abstract A high-density impurity semiconductor region (501) having the same conductivity type as a single-crystal silicon substrate (406) is formed in addition to a main circuit portion of a peripheral circuit on the single-crystal silicon substrate. This semiconductor region is connected to a given potential point directly leading to an electric source. Alternatively, at a part of the peripheral drive circuit, a high-density impurity semiconductor region having a conductivity type reverse to that of the single-crystal silicon substrate is formed, and this semiconductor region is connected to a given potential point directly leading to an electric source. This can solve the problem that photocarriers (electrons and/or holes) caused by the light having not cut off and having entered into the single-crystal silicon region may enter into the peripheral drive circuit through the single-crystal silicon substrate to cause misoperation of the circuit.
Inventors
- 👤 Tetsunobu Kochi
- 👤 Mamoru Miyawaki
- 👤 Shunsuke Inoue
- 👤 Takanori Watanabe
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-06 02:39
CPC Classifications
G; G09; G09G; G09G3/00; G09G3/20; G09G3/34; G09G3/36; G09G3/3611; G09G3/3685; G09G3/3688; G09G3/3648; H; H10; H10D; H10D86/00; H10D86/201; H10D86/80; G02; G02F; G02F1/00; G02F1/01; G02F1/13; G02F1/133; G02F1/1333; G02F1/1345; G02F1/13454; G02F1/136; G02F1/1362; G02F1/136277; G02F1/136281; G09G2310/00; G09G2310/02; G09G2310/0243; G09G2310/0248; G09G2310/0264; G09G2310/0297; G09G3/2007; G09G3/2011
Claims Analysis
Total Claims: 25
Claim 1
Independent Claim
44 words
A display unit having an image display portion and a drive circuit which are integrally formed, wherein the drive circuit has an internal main circuit portion and, in addition thereto, a high-density impurity semiconductor region directly connected to the wiring of an electric source.
Claim 2
Dependent Claim
33 words
The display unit according to claim 1, wherein said high-density impurity semiconductor region is provided between the main circuit portion and the periphery of a substrate on which the drive circuit is formed.
Claim 3
Dependent Claim
27 words
The display unit according to claim 1 or 2, wherein said high-density impurity semiconductor region is provided between the main circuit portion and the image display portion.
Claim 4
Dependent Claim
29 words
The display unit according to any one of claims 1 to 3, wherein said high-density impurity semiconductor region is provided in the manner it surround the main circuit portion.
Claim 5
Dependent Claim
29 words
The display unit according to any one of claims 1 to 4, wherein said high-density impurity semiconductor region is provided on the opposite side of the main circuit portion.
Claim 6
Dependent Claim
41 words
The display unit according to any one of claims 1 to 5, wherein said drive circuit is formed on a single-crystal semiconductor substrate, and said high-density impurity semiconductor region has a conductivity type reverse to that of the single-crystal semiconductor substrate.
Claim 7
Dependent Claim
39 words
The display unit according to any one of claims 1 to 6, wherein said drive circuit is formed on a single-crystal semiconductor substrate, and said high-density impurity semiconductor region has the same conductivity type as the single-crystal semiconductor substrate.
Claim 8
Dependent Claim
26 words
The display unit according to any one of claims 1 to 7, wherein said wiring is connected to the high-potential point (Vcc) of the electric source.
Claim 9
Dependent Claim
26 words
The display unit according to any one of claims 1 to 8, wherein said wiring is connected to the low-potential point (GND) of the electric source.
Claim 10
Dependent Claim
23 words
The display unit according to any one of claims 1 to 9, wherein said high-density impurity semiconductor region is formed in a trench.
Claim 11
Dependent Claim
26 words
The display unit according to any one of claims 1 to 10, wherein said high-density impurity semiconductor has a buried insulating layer in the vicinity thereof.
Claim 12
Dependent Claim
22 words
The display unit according to any one of claims 6 to 11, wherein said single-crystal semiconductor substrate is formed of bulk Si.
Claim 13
Dependent Claim
28 words
The display unit according to any one of claims 1 to 12, wherein said high-density impurity semiconductor region has a depth of from 0.1 µm to 1 µm.
Claim 14
Dependent Claim
24 words
The display unit according to any one of claims 1 to 13, wherein said high-density impurity semiconductor region is formed by implantation of As.
Claim 15
Dependent Claim
24 words
The display unit according to any one of claims 1 to 13, wherein said high-density impurity semiconductor region is formed by implantation of P.
Claim 16
Dependent Claim
24 words
The display unit according to any one of claims 1 to 15, wherein said high-density impurity semiconductor region is formed by implantation of B.
Claim 17
Dependent Claim
33 words
The display unit according to any one of claims 1 to 16, wherein said high-density impurity semiconductor region has an impurity density of from 1 × 10¹⁹ cm⁻³ to 1 × 10²² cm⁻³.
Claim 18
Dependent Claim
27 words
The display unit according to any one of claims 1 to 17, wherein said high-potential point (Vcc) has a voltage of from 5 V to 30 V.
Claim 19
Dependent Claim
34 words
The display unit according to any one of claims 1 to 18, wherein said high-density impurity semiconductor region and said main circuit portion are at a distance of from 1 µm to 500 µm.
Claim 20
Dependent Claim
41 words
The display unit according to any one of claims 1 to 19, wherein said display unit is a liquid-crystal display unit; said image display portion having a pair of substrates, and a liquid-crystal material being held between the pair of substrates.
Claim 21
Dependent Claim
31 words
The display unit according to claim 20, wherein said liquid-crystal display unit is an active matrix liquid-crystal display device; said image display portion having a switching device for each picture element.
Claim 22
Dependent Claim
15 words
The display unit according to claim 21, wherein said switching device is a thin-film transistor.
Claim 23
Dependent Claim
16 words
The display unit according to claim 22, wherein said thin-film transistor is formed of polycrystalline Si.
Claim 24
Dependent Claim
27 words
An imaging device such as a display device having means, for example an electrically contacted highly doped semiconductor region, for trapping or removing undesired photogenerated charge carriers.
Claim 25
Dependent Claim
35 words
An imaging device such as a display device having means, for example an electrically contacted highly doped semiconductor region, for inhibiting passage of undesired charge carriers to an integrally formed drive circuit of the device.
References Cited (Backward Citations)
No citation records indexed.
USPTO Annuity & Maintenance Windows
Maintenance schedule is calculated for granted US utility patents.