Display device and manufacture method for the same

Claim 2

A display device according to claim 1, wherein said film having tensile stress is formed of silicon nitride.

Claim 3

A display device according to claim 2, wherein said nitride silicon is formed by the plasma CVD process.

Claim 4

A display device according to claim 1, wherein said film having tensile stress is disposed below a wiring layer for making up said signal line or said scan line which is in the lowermost position with respect to a layer of said liquid crystal layer as a reference.

Claim 5

A display device according to claim 1, wherein said film having tensile stress is a film for suppressing diffusion of hydrogen.

Claim 6

A display device according to claim 5, wherein said active matrix substrate includes a first film for suppressing diffusion of hydrogen and a second thin film for supplying hydrogen to said polycrystalline silicon, said first film and said second film being positioned one above the other with the intervention of said polycrystalline silicon therebetween.

Claim 7

A display device according to claim 6, wherein said first film and said second film are each formed of silicon nitride.

Claim 8

A display device according to claim 6, wherein said second film has compressive stress for silicon.

Claim 9

A display device according to claim 1, wherein said active matrix substrate includes a glass or quartz substrate.

Claim 10

A display device according to claim 1, wherein said active matrix substrate includes a single crystal silicon substrate.

Claim 11

A display device according to claim 10, wherein part of said single crystal silicon substrate is removed to provide a light transmissive substrate.

Claim 12

A display device according to claim 10, wherein said active matrix substrate includes a scanning circuit and part of said scanning circuit is made up by switching devices each using single crystal silicon as a semiconductor layer.

Claim 13

A display device according to claim 6, wherein said first film and said second film meet the relationships below on an assumption that said first film and said second film have optical refractive indexes n₁, n₂ and thicknesses d₁, d₂, respectively, and the wavelength of light is λ: n₁d₁ = N₁ λ/2 n₂d₂ = N₂ λ/2 (where N₁ and N₂ are both natural numbers, not 0)

Claim 14

A display device according to claim 1, wherein an image is displayed with transmission of incident light.

Claim 15

A display device according to claim 1, wherein an image is displayed with reflection of incident light.

Claim 16

A display device according to claim 1, wherein an image is displayed with incident light projected onto a screen.

Claim 17

A display device according to claim 1, wherein said device is assembled in spectacles.

Claim 18

A display device according to claim 1, said device comprising a liquid crystal held between a semiconductor substrate, which has pixel electrodes arranged in one-to-one relation to intersections between a plurality of signal lines and a plurality of scan lines, has driving circuits provided in peripheral portions of said pixel electrodes for driving said respective pixel electrode, and is partly removed in portions below pixel display areas where said pixel electrodes are provided, allowing light to transmit through said semiconductor substrate to enter said pixel display areas, and an opposite substrate opposed to said active matrix substrate, wherein a field oxide film is provided below each of said pixel display areas of said semiconductor substrate so as to extend toward the peripheral portion where said driving circuit is provided, the removed part of said semiconductor substrate is positioned inwardly of a position at which said field oxide film terminates, and said film having tensile stress is disposed in the peripheral portion where said driving circuit is provided.

Claim 19

A manufacture method for a display device comprising a liquid crystal held between an active matrix substrate made up by arranging thin film transistors thereon, each using polycrystalline silicon as a semiconductor layer, in one-to-one relation to intersections between a plurality of signal lines and a plurality of scan lines, and an opposite substrate opposed to said active matrix substrate, wherein said active matrix substrate is made up by arranging a film having tensile stress at least below or above said semiconductor layer.

Claim 20

A semiconductor device comprising a thin film transistor having a semiconductor layer of, for example, polycrystalline silicon disposed adjacent a tensile layer.

Claim 21

A semiconductor device, for example a thin film transistor, having a semiconductor layer of, for example, polycrystalline silicon disposed between a hydrogen providing layer and a hydrogen diffusion inhibiting layer.

Claim 22

An imaging device such as a display device comprising a semiconductor device in accordance with claim 20 or 21.