EP0688048A2
Expired / Lapsed
EP
⏱️ 0.0 years remaining
Semiconductor member having an SOI structure
Assignee: Canon Inc
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Filing: 1991-08-02
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Granted: —
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Expires: 2011-08-02
Abstract
Abstract A semiconductor member is disclosed having a non-porous monocrystalline semiconductor region arranged on a region constituted of an insulating substance, wherein the difference between the maximum value and the minimum value of the thickness of said non-porous silicon monocrystalline semiconductor region is 10 % or less based on said maximum value. Further, the dislocation defect density in said non-porous silicon moncrystalline semiconductor may be 2.0 x 10⁴/cm² or less, and the lifetime of carriers may be 5.0 x 10⁻⁴ sec or longer.
Inventors
- 👤 Takao C/O Canon Kabushiki Kaisha Yonehara
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-08 08:58
CPC Classifications
H; H10; H10P; H10P90/00; H10P90/19; H10P90/1904; H10P90/1906; H10P90/1908; H10P90/1914; H10W; H10W10/00; H10W10/01; H10W10/061; H10W10/10; H10W10/181
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
49 words
A semiconductor member having a non-porous silicon monocrystalline semiconductor region arranged on a region constituted of an insulating substance, wherein the difference between the maximum value and the minimum value of the thickness of said non-porous silicon monocrystalline semiconductor region is 10% or less based on said maximum value.
Claim 2
Dependent Claim
54 words
A semiconductor member having a non-porous silicon monocrystalline semiconductor region arranged on a region constituted of an insulating substance according to claim 1, wherein a dislocation defect density in said non-porous silicon monocrystalline semiconductor region is 2.0 x 10⁴/cm² or less, and the life time of carriers is 5.0 x 10⁻⁴ sec or longer.
Claim 3
Dependent Claim
42 words
A semiconductor member having a non-porous silicon monocrystalline semiconductor region arranged on a region constituted of an insulating substance according to claim 1, wherein a dislocation defect density in said non-porous silicon monocrystalline semiconductor region is 2.0 x 10⁴ /cm² or less.
Claim 4
Dependent Claim
43 words
A semiconductor member having a non-porous silicon monocrystalline semiconductor region arranged on a region constituted of an insulating substance according to claim 1, wherein the life time of carriers in said non-porous silicon monocrystalline semiconductor region is 5.0 x 10⁻⁴ sec or longer.
References Cited (Backward Citations)
No citation records indexed.
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