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EP0683511A2 Expired / Lapsed EP ⏱️ 0.0 years remaining

Device fabrication involving planarization

Assignee: AT&T Inc
•
Filing: 1995-05-10
•
Granted: —
•
Expires: 2015-05-10
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Abstract

Abstract Planarization of geometrically difficult semiconductor device surfaces is accomplished utilizing a coating technique in which on an object with a flat surface is used to planarize the coating material. In particular, device processing is accomplished by including a step that produces a planar surface by coating a nonplanar surface with a material that has a viscosity of less than 1000 cp. An object with a flat surface is placed into contact with the material in such a manner that the material is planarized to a desired degree. The material is cured while in contact with the object's flat surface. The object is then separated from the material. The planarity of the planarizing material is then transferred into the underlying layer using conventional techniques.

Inventors

  • 👤 Judith Ann Prybyla
  • 👤 Gary Newton Taylor

Bibliographic Details

Application Number —
Jurisdiction EP
Data Source google_patents
Last Synchronized 2026-11-02 12:16
CPC Classifications
H; H10; H10P; H10P95/00; H10P95/06; H10P14/00; H10P14/60; H10P14/63; H10P14/6326; H10P14/6342; H10P50/00; H10P50/20; H10P50/28; H10P50/282; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/062

Claims Analysis

Total Claims: 12
Claim 1
Independent Claim 99 words
A process for fabricating a semiconductor device comprising: forming a planarization material region on a topographic substrate surface wherein the planarization material has a pre-planarization viscosity of about 20 cp to about 1000 cp; contacting the planarization material region having said viscosity with a flat surface of an object with a force sufficient to substantially transfer the surface flatness from the flat surface to the material; hardening the material while in contact with the flat surface wherein the material undergoes a reduction in volume of less than about 10%; and separating the flat surface from contact with the material.
Claim 2
Dependent Claim 20 words
The process of claim 1 further comprising transferring the flat surface from the material to the substrate underlying the material.
Claim 3
Dependent Claim 24 words
The process of claim 1 wherein the force is sufficient to planarize the material to at least about eighty-five percent over the initial topography.
Claim 4
Dependent Claim 22 words
The process of claim 2 wherein the flat surface is transferred from the material to the substrate underlying the material by etching.
Claim 5
Dependent Claim 26 words
The process of claim 4 wherein the etch rate of the material is about equal to the etch rate of the substrate material underlying the material.
Claim 6
Dependent Claim 12 words
The process of claim 5 wherein the material comprises an epoxy resin.
Claim 7
Dependent Claim 14 words
The process of claim 6 wherein the epoxy resin is an aromatic epoxy resin.
Claim 8
Dependent Claim 14 words
The process of claim 6 wherein the material further comprises an energy-generated acid catalyst.
Claim 9
Dependent Claim 14 words
The process of claim 8 wherein the energy-generated acid catalyst is a photoacid generator.
Claim 10
Dependent Claim 17 words
The process of claim 9 wherein the material is hardened by exposing the material to ultraviolet radiation.
Claim 11
Dependent Claim 12 words
The process of claim 5 wherein the material comprises a melted polymer.
Claim 12
Dependent Claim 29 words
The process of claim 11 wherein the melted polymer is hardened by cooling the melted polymer to a temperature that is below the melting point of the melted polymer.

References Cited (Backward Citations)

US2033287A Cited
US4689289A Cited
US4882201A Cited

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