EP0681323A2
Expired / Lapsed
EP
⏱️ 0.0 years remaining
Test element group of a semiconductor wafer and semiconductor device
Assignee: Texas Instruments Inc
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Filing: 1995-05-05
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Granted: —
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Expires: 2015-05-05
Abstract
Abstract A semiconductor wafer and semiconductor device manufactured from the wafer. The wafer has a conductive layer (33A) intermittently formed in the longitudinal direction of a scribe area (2). The conductive layer's width shorter width than its length and shaped so that the scribe area is cut in the longtitudinal direction including the location of said width. The invention provides a semiconductor wafer not giving rise to faults, such as short-circuiting due to shavings, and not requiring any modification in the scribed width, blade width, or pad size when sawing conductive layers in the scribe area, such as the above-mentioned pads of the Test Element Group.
Inventors
- 👤 Kazuhiro C/O Texas Instruments Japan Ltd. Kijima
- 👤 Hitoshi C/O Texas Instruments Japan Ltd. Hattori
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-09 02:45
CPC Classifications
H; H10; H10P; H10P74/00; H10P74/27; H10P74/277; H10W; H10W72/00; H10W72/701
Claims Analysis
Total Claims: 15
Claim 1
Independent Claim
26 words
A semiconductor wafer comprising a conductive layer intermittently formed in the longitudinal direction of a scribe area and which has a width shorter than its length.
Claim 2
Dependent Claim
18 words
The semiconductor wafer of Claim 1, further comprising a conductive layer intermittently formed and connected to conductive connectors.
Claim 3
Dependent Claim
19 words
The semiconductor wafer of Claim 2, further comprising a conductive layer intermittently formed on both sides of the connectors.
Claim 4
Dependent Claim
18 words
The semiconductor wafer of any of Claims 1-3, further comprising a conductive layer that has a narrowed end.
Claim 5
Dependent Claim
16 words
The semiconductor wafer of any of Claims 1-4, further comprising a conductive layer whose end rises.
Claim 6
Dependent Claim
21 words
The semiconductor wafer described of any of Claims 1-5, further provided with a conductive layer in contact with the substrate layer.
Claim 7
Dependent Claim
13 words
The semiconductor wafer of Claim 6, further comprising a substrate layer of polysilicon.
Claim 8
Dependent Claim
32 words
The semiconductor wafer of any preceding claim, being formed in both the longitudinal and transverse directions in a scribe area and which is in contact with a substrate layer of the wafer.
Claim 9
Dependent Claim
19 words
The semiconductor wafer of Claim 8, further wherein the substrate layer connects the conductive layer with another conductive layer.
Claim 10
Dependent Claim
16 words
The semiconductor wafer of Claim 8 or 9, wherein the substrate layer is made of polysilicon.
Claim 11
Dependent Claim
13 words
The semiconductor wafer of Claims 1-10, wherein the conductive layer made of metal.
Claim 12
Dependent Claim
34 words
The semiconductor wafer of any of Claims 1-11, further comprising both an element made in a scribe area and used for testing, and a conductive layer made as a pad used as an element.
Claim 13
Dependent Claim
44 words
The semiconductor wafer of any of Claims 1-12, further comprising a conductive layer intermittently formed and having a width narrower than the distance between the leads connected to the pad used for input and/or output of the semiconductor chip signals, and the semiconductor chip.
Claim 14
Dependent Claim
14 words
A semiconductor device comprising the semiconductor wafer described in any one of Claims 1-13.
Claim 15
Independent Claim
33 words
A method of forming a semiconductor device comprising forming on a wafer an intermittent conductive layer in a longitudinal direction of a scribe area, the layer having a width shorter than its length.
References Cited (Backward Citations)
No citation records indexed.
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