EP0658066A2
Expired / Lapsed
EP
⏱️ 0.0 years remaining
Diamond heater
Assignee: Sumitomo Electric Industries Ltd
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Filing: 1994-12-07
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Granted: —
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Expires: 2014-12-07
Abstract
Abstract Continual boron-doped diamond parts with ends are formed in a non-doped insulating diamond crystal. Ohmic electrodes are deposited on the ends of the boron-doped continual parts. Non-doped diamond encloses and insulates the boron-doped diamond. When the boron-doped diamond parts are supplied with a current, the boron-doped parts generate Joule's heat. The device acts as a heater. Since the whole is made of diamond crystal, the heater can be sized to extremely small. The heater enjoys high resistance against high temperature, especially in an anaerobic atmosphere. The diamond heater can be adopted in vacuum or in liquid, since the insulating diamond layers are highly resistant against vacuum and liquid.
Inventors
- 👤 Takashi C/O Itami Works Of Sumitomo Tsuno
- 👤 Satoshi C/O Itami Works Of Sumitomo Fuji
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-09 04:05
CPC Classifications
H; H05; H05B; H05B3/00; H05B3/10; H05B3/12; H05B3/14; H05B3/141
Claims Analysis
Total Claims: 16
Claim 1
Independent Claim
73 words
A diamond heater comprising: one or more continual conductive lines with ends, the lines and the ends being made of boron-doped single crystal or polycrystal diamond; insulating parts enclosing the conductive lines and being made of non-doped diamond single crystal or polycrystal; and ohmic electrodes formed on the ends of the conductive lines; wherein a current flows in the conductive lines, thereby generating Joule's heat, when a voltage is applied between the electrodes.
Claim 2
Dependent Claim
33 words
A diamond heater as claimed in claim 1, wherein the ohmic electrodes comprise a Ti layer deposited on the boron-doped diamond and an Au or a Pt layer formed on the Ti layer.
Claim 3
Dependent Claim
21 words
A diamond heater as claimed in claim 1, wherein the boron concentration is higher than 10¹⁹cm⁻³ in the boron-doped conductive lines.
Claim 4
Dependent Claim
41 words
A diamond heater as claimed in claim 1, wherein the ends of the boron-doped diamond conductive lines are wider than the other parts of the conductive lines in order to reduce the contact resistance between the electrodes and the boron-doped diamond.
Claim 5
Dependent Claim
45 words
A diamond heater as claimed in claim 1, wherein the ends of the boron-doped diamond conductive lines have higher concentration of boron atoms than the other parts of the conductive lines in order to reduce the contact resistance between the electrodes and the boron-doped diamond.
Claim 6
Dependent Claim
26 words
A diamond heater as claimed in claim 1, wherein the boron-doped conductive line meanders a plurality of times like a comb in a single, planar layer.
Claim 7
Dependent Claim
30 words
A diamond heater as claimed in claim 1, wherein the boron-doped conductive line is a spiral having an inner end and an outer end formed in a single, planar layer.
Claim 8
Dependent Claim
33 words
A diamond heater as claimed in claim 1, wherein a plurality of boron-doped conductive lines are formed on different plural layers and all the conductive lines are connected in series to each other.
Claim 9
Dependent Claim
33 words
A diamond heater as claimed in claim 1, wherein a plurality of boron-doped conductive lines are formed on different plural layers and all the conductive lines are connected in parallel to the electrodes.
Claim 10
Dependent Claim
78 words
A diamond heater comprising: one or more than one continual conductive line with ends made of boron-doped single crystal or polycrystal diamond; insulating parts enclosing the conductive lines and being made of non-doped diamond single crystal or polycrystal; ohmic electrodes formed on the ends of the conductive lines; and a carbide layer enclosing the non-doped diamond insulation parts; wherein a current flows in the conductive lines, thereby generating Joule's heat, when a voltage is applied between the electrodes.
Claim 11
Dependent Claim
19 words
A diamond heater as claimed in claim 10, wherein the carbide is silicon carbide (SiC) or titanium carbide (TiC).
Claim 12
Independent Claim
151 words
A method for producing a heater comprising the steps of: growing a non-doped diamond layer on a substrate; growing a boron-doped diamond layer on the non-doped diamond layer by the CVD method from a material gas of hydrogen gas, a hydrocarbon gas and a boron-including gas; selectively etching unnecessary parts of the boron-doped layer up to the bottom non-doped diamond layer by the photolithograpy in order to make continual lines with ends of the boron-doped diamond; depositing Ti pads selectively on the ends of the boron-doped lines; depositing Au layers or Pt layers selectively on the Ti pads, growing a non-doped diamond layer both on the bottom non-doped diamond and the boron-doped diamond lines; removing the substrate by etching or grinding; and eliminating the parts of the non-doped diamond layer just on the Au or Pt layers in order to expose the Au or Pt layers out of the non-diamond layer.
Claim 13
Independent Claim
196 words
A method for producing a heater comprising the steps of: growing a non-doped diamond layer on a substrate by the CVD method from a material gas of hydrogen gas and a hydrocarbon gas; growing a boron-doped diamond layer on the non-doped diamond layer; selectively etching unnecessary parts of the boron-doped layer up to the bottom non-doped diamond layer by the photolithograpy in order to make continual lines with ends of the boron-doped diamond; depositing Ti pads selectively on the ends of the boron-doped lines; depositing Au layers or Pt layers selectively on the Ti pads, growing a non-doped diamond layer both on the bottom non-doped diamond and the boron-doped diamond lines; removing the substrate by etching or grinding; and evaporating or sputtering a protecting material which makes carbide by reacting with diamond on the whole surfaces of the diamond layers; annealing all the diamond at a high temperature in order to produce a protecting carbide layer on the whole surface of the diamond; eliminating the parts of the non-doped diamond layer and the carbide layer just on the Au or Pt layers in order to expose the Au or Pt layers out of the non-diamond layer.
Claim 14
Independent Claim
20 words
A method as claimed in either of claims 12 or 13, wherein the substrate is a silicon single crystal wafer.
Claim 15
Independent Claim
23 words
A method as claimed in either of claims 12 or 13, wherein the substrate is a nickel plate or is a molybdenum plate.
Claim 16
Independent Claim
19 words
A method as claimed in either of claims 12 or 13, wherein the protecting material is silicon or titanium.
References Cited (Backward Citations)
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