EP0647730A2
Expired / Lapsed
EP
⏱️ 0.0 years remaining
GaN single crystal
Assignee: Mitsubishi Cable Industries Ltd
•
Filing: 1994-10-06
•
Granted: —
•
Expires: 2014-10-06
Abstract
Abstract A GaN single crystal having a full width at half-maximum of the double-crystal X-ray rocking curve of 5-250 sec and a thickness of not less than 80 µm, a method for producing the GaN single crystal having superior quality and sufficient thickness permitting its use as a substrate and a semiconductor light emitting element having high luminance and high reliability, comprising, as a substrate, the GaN single crystal having superior quality and/or sufficient thickness permitting its use as a substrate.
Inventors
- 👤 Kazuyuki C/O Itami Works Of Tadatomo
- 👤 Shinichi C/O Itami Works Of Watabe
- 👤 Hiroaki C/O Itami Works Of Okagawa
- 👤 Kazumasa Hiramatsu
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-26 19:26
CPC Classifications
H; H10; H10H; H10H20/00; H10H20/80; H10H20/81; H10H20/822; H10H20/824; H10H20/825; C; C30; C30B; C30B25/00; C30B25/02; C30B29/00; C30B29/10; C30B29/40; C30B29/403; C30B29/406; H10H20/01; H10H20/011; H10H20/013; H10H20/0137; H10H20/018
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
28 words
A GaN single crystal having a full width at half-maximum of the double-crystal X-ray rocking curve of 5-250 sec and a thickness of not less than 80 µm.
Claim 2
Dependent Claim
84 words
The GaN single crystal of Claim 1, which is produced by the steps of growing a material showing good lattice match with GaN single crystal on a substrate having GaN single crystal at least on its surface to give a buffer layer, growing GaN crystal thereon to give a GaN single crystal, the above steps being one cycle of crystal growth, and repeating said cycle of crystal growth at least once on the GaN single crystal obtained by the first cycle of crystal growth.
Claim 3
Independent Claim
42 words
A method for producing a GaN single crystal, comprising growing a material showing good lattice match with GaN single crystal on a substrate having GaN single crystal at least on its surface to give a buffer layer, and growing GaN crystal thereon.
Claim 4
Dependent Claim
94 words
The method of Claim 3, comprising growing a material showing good lattice match with GaN single crystal on a substrate having GaN single crystal at least on its surface to give a buffer layer, growing GaN crystal thereon to give a GaN single crystal, the above steps being one cycle of crystal growth, repeating said cycle of crystal growth at least once on the GaN single crystal obtained by the first cycle of crystal growth to give a laminate composed of the buffer layer and the GaN single crystal, and removing respective buffer layers.
Claim 5
Dependent Claim
87 words
The method of Claim 3, comprising growing a material showing good lattice match with GaN single crystal on a substrate having GaN single crystal at least on its surface to give a buffer layer, growing GaN crystal thereon to give a GaN single crystal, the above steps being one cycle of crystal growth, repeating said cycle of crystal growth at least once on the GaN single crystal obtained by the first cycle of crystal growth, and removing the buffer layer at every cycle of the crystal growth.
Claim 6
Independent Claim
56 words
The method of any one of Claims 3 to 5, comprising the use of a three-layer structure substrate composed of a sapphire crystal substrate, a buffer layer of Ga j Al 1-j N (wherein 0≦j≦1) formed thereon, and a surface layer of GaN single crystal to be formed on the buffer layer, as a first substrate.
Claim 7
Independent Claim
37 words
The method of any one of Claims 3 to 5, wherein the material for the buffer layer is a compound comprising at least one member selected from the group consisting of oxides of the group II elements.
Claim 8
Dependent Claim
23 words
The method of Claim 7, wherein the oxides of the group II elements are BeO, MgO, CaO, ZnO, SrO, CdO, BaO and HgO.
Claim 9
Dependent Claim
38 words
The method of Claim 7, wherein the compound is represented by the formula (BeO) x (ZnO) y (HgO) 1-x-y (I) wherein 0≦x≦1, 0≦y≦1 and 0≦x+y≦1, and has a composition ratio showing good lattice match with GaN single crystal.
Claim 10
Dependent Claim
41 words
The method of Claim 9, wherein the compound is added or substituted with at least one compound selected from the group consisting of MgO, CaO, SrO, CdO and BaO to the degree that a wurtzite type structure thereof can be maintained.
Claim 11
Independent Claim
39 words
The method of any one of Claims 3 to 10, wherein the GaN single crystal has a full width at half-maximum of the double-crystal X-ray rocking curve of 5-250 sec and a thickness of not less than 80 µm.
Claim 12
Dependent Claim
58 words
A semiconductor light emitting element comprising a GaN single crystal having a full width at half-maximum of the double-crystal X-ray rocking curve of 5-250 sec as a substrate, plural GaN group compound semiconductor layers comprising a light emitting part, which are laminated thereon to give a laminate, and electrodes set on the respective outermost layers of the laminate.
Claim 13
Dependent Claim
86 words
The semiconductor light emitting element of Claim 12, wherein the GaN single crystal is obtained by growing a material showing good lattice match with GaN single crystal, on a substrate having GaN single crystal at least on its surface, to give a buffer layer, growing GaN crystal thereon to give a GaN single crystal, the above steps being one cycle of crystal growth, and repeating said cycle of crystal growth at least once on the GaN single crystal obtained by the first cycle of crystal growth.
Claim 14
Dependent Claim
37 words
The semiconductor light emitting element of Claim 12, wherein the light emitting part has a p-n junction selected from the group consisting of homo-junction, single-hetero junction, double-hetero junction, single quantum well structure and multiple quantum well structure.
References Cited (Backward Citations)
No citation records indexed.
USPTO Annuity & Maintenance Windows
Maintenance schedule is calculated for granted US utility patents.