Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
64 words
A dry etching method for a conductive material layer comprising the steps of: forming an oxygen-containing antireflection film on a surface of a conductive material layer; forming a patterned mask layer on the antireflection film; forming a sidewall protection film on a sidewall of the mask layer; and etching the conductive material layer using the mask layer having the sidewall protection film formed thereon.
Claim 2
Dependent Claim
26 words
The dry etching method as claimed in claim 1, wherein the sidewall protection film is formed after the antireflection film is patterned using the mask layer.
Claim 3
Dependent Claim
35 words
The dry etching method as claimed in claim 1, wherein the antireflection film is patterned after the sidewall protection film is formed, with the sidewall protection film left on the sidewall of the antireflection film.
Claim 4
Dependent Claim
30 words
The dry etching method as claimed in claim 1, wherein the sidewall protection film is formed by using at least one of sulfur based compound and sulfur nitride based compound.
Claim 5
Dependent Claim
20 words
The dry etching method as claimed in claim 1, wherein the antireflection film is composed of an SiON based material.
Claim 6
Dependent Claim
45 words
The dry etching method as claimed in claim 1, wherein the conductive material layer is composed of a material selected from the group consisting of a polycide film, an Al based alloy material layer, a Cu based alloy material layer and a refractory metal layer.
Claim 7
Dependent Claim
29 words
The dry etching method as claimed in claim 1, wherein the conductive material layer is formed on a semiconductor substrate having an insulating film formed on a surface thereof.
Claim 8
Dependent Claim
30 words
The dry etching method as claimed in claim 1, wherein the conductive material layer is formed on an insulating film having a barrier metal layer formed on a surface thereof.
Claim 9
Dependent Claim
103 words
A dry etching method for a conductive material layer comprising the steps of: forming an oxygen-containing antireflection film on a surface of a conductive material layer; forming a patterned mask layer on the antireflection film; patterning the antireflection film using the mask layer to expose a selected portion of the conductive material layer; forming sidewall protection films on sidewalls of the mask layer and the antireflection film using deposit reaction products formed by a reaction of the exposed portion of the conductive material layer with plasma; and etching the conductive material layer using the mask layer having the sidewall protection film formed thereon.
Claim 10
Dependent Claim
45 words
The dry etching method as claimed in claim 9, wherein the conductive material layer is composed of a material selected from the group consisting of a polycide film, an Al based alloy material layer, a Cu based alloy material layer and a refractory metal layer.
Claim 11
Dependent Claim
20 words
The dry etching method as claimed in claim 9, wherein the antireflection film is composed of an SiON based material.
Claim 12
Dependent Claim
30 words
The dry etching method as claimed in claim 9, wherein the conductive material layer may be formed on a semiconductor substrate having an insulating film formed on a surface thereof.
Claim 13
Dependent Claim
31 words
The dry etching method as claimed in claim 9, wherein the conductive material layer may be formed on an insulating film having a barrier metal layer formed on a surface thereof.