EP0644577A1
Expired / Lapsed
EP
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Treating method and treating apparatus for treated object under reduced pressure environment
Assignee: Hitachi Ltd
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Filing: 1994-06-09
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Granted: —
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Expires: 2014-06-09
Abstract
Abstract The object of the present invention is to provide a method of plasma treatment in which wafer temperature control is easily performed and the structure of electrode is simplified. On etching treatment of a wafer, firstly the pressure inside the etching treatment chamber is controlled to a certain pressure, for example above 10 Torr, by means of pumping while the process gas or thermal conductive gas is being introduced into the etching treatment chamber. In this environment, the wafer is mounted on an electrostatic adhering electrode and is electrostatically adhered. The process gas having pressure of approximately 10 Torr is enclosed in the space (reservoir) from the grooves on the electrostatic adhering electrode to the gaps between the wafer lift-up pin. Then, the pressure inside the etching treating chamber is controlled to the etching treating pressure, and etching treatment is performed. The process gas enclosed in the reservoir contributes to cooling of the wafer. After the completion of treatment, the process gas in the reservoir is exhausted with a vacuum pump, the wafer is removed from the electrostatic adhering electrode.
Inventors
- 👤 Youichi Ito
- 👤 Manabu Edamura
- 👤 Naoyuki Tamura
- 👤 Hiroyuki Shichida
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-09 04:09
CPC Classifications
H; H10; H10P; H10P50/00; H10P50/20; H10P50/24; H10P50/242; H10P72/00; H10P72/70; H10P72/72; H10P72/04; H10P72/0402; H10P72/0418
Claims Analysis
Total Claims: 25
Claim 1
Independent Claim
80 words
A method of treating a treated object under a reduced pressure environment, which comprises: a process for electrostatically adhering a treated object to a specimen table after the treated object is mounted on the specimen table in a gas environment of a treating system having pressure higher than treating pressure; a process for controlling the pressure of a treating chamber to a given treating pressure; a process for treating said treated object under said treating pressure in said treating chamber.
Claim 2
Independent Claim
80 words
A method of treating a treated object under a reduced pressure environment, which comprises: a process for electrostatically adhering a treated object to a specimen table after the treated object is mounted on the specimen table in a gas environment of a treating chamber having pressure higher than treating pressure; a process for controlling the pressure of said treating chamber to a given treating pressure; a process for treating said treated object under said treating pressure in said treating chamber.
Claim 3
Independent Claim
81 words
A method of treating a treated object under a reduced pressure environment, which comprises: a process for electrostatically adhering a treated object to a specimen table after the treated object is mounted on the specimen table in a gas environment of a spare treating chamber having pressure higher than treating pressure; a process for controlling the pressure of a treating chamber to a given treating pressure; a process for treating said treated object under said treating pressure in said treating chamber.
Claim 4
Independent Claim
103 words
A method of treating a treated object under a reduced pressure environment, which comprises: a process for electrostatically adhering a treated object to a specimen table having a reservoir after the treated object is mounted on the specimen table in a gas environment of a treating system having pressure higher than treating pressure; a process for controlling the pressure of a treating chamber to a given treating pressure; a process for transmitting heat between said specimen and said specimen table using said gas enclosed in said reservoir as well as for treating said treated object under said treating pressure in said treating chamber.
Claim 5
Dependent Claim
40 words
A method of treating a treated object under a reduced pressure environment according to any of claim 1 through claim 4, wherein said method of treating the treated object is a plasma treating method treating the treated object with plasma.
Claim 6
Dependent Claim
42 words
A method of treating a treated object under a reduced pressure environment according to any of claim 1 through claim 4, wherein said method of treating the treated object is an ion implantation treating method treating the treated object with ion implantation.
Claim 7
Dependent Claim
41 words
A method of treating a treated object under a reduced pressure environment according to any of claim 1 through claim 4, wherein said method of treating the treated object is a treating method treating the treated object with molecular beam epitaxy.
Claim 8
Dependent Claim
53 words
A method of treating a treated object under a reduced pressure environment according to claim 4, wherein the heat transmission between said specimen and said specimen table using said gas enclosed in said reservoir is that the heat generated in the treated object by the plasma treatment is transmitted to said specimen table.
Claim 9
Dependent Claim
89 words
A method of treating a treated object under a reduced pressure environment according to any of claim 1 through claim 4, wherein said specimen table comprises an electrostatic adhering electrode having grooves on its surface and a hole for a pin for lifting up the specimen, and gas having a pressure higher than said treating pressure is enclosed between said wafer and the space that is formed from the grooves on said electrostatic adhering electrode to the gap between the pin to lift up the specimen and the hole.
Claim 10
Dependent Claim
34 words
A method of treating a treated object under a reduced pressure environment according to any of claim 1 through claim 4, wherein said pressure higher than the treating pressure is higher than 10 Torr.
Claim 11
Independent Claim
108 words
A method of treating a specimen with plasma, which comprises: a process for mounting a specimen on a specimen table having a reservoir in a gas environment of a treating system having pressure higher than treating pressure; a process for enclosing said gas in said reservoir by means of electrostatically adhering the specimen to the specimen table; a process for controlling the pressure of a treating chamber to a given treating pressure; a process for transmitting heat between said specimen and said specimen table using said gas enclosed in said reservoir as well as for treating said specimen with plasma under said treating pressure in said treating chamber.
Claim 12
Dependent Claim
78 words
A treatment apparatus for treating a treated object under a reduced pressure environment, which comprises: means for electrostatically adhering a treated object to a specimen table after the treated object is mounted on the specimen table in a gas environment of a treating system having pressure higher than treating pressure; means for controlling the pressure of a treating chamber to a given treating pressure; means for treating said treated object under said treating pressure in said treating chamber.
Claim 13
Dependent Claim
78 words
A treatment apparatus for treating a treated object under a reduced pressure environment, which comprises: means for electrostatically adhering a treated object to a specimen table after the treated object is mounted on the specimen table in a gas environment of a treating chamber having pressure higher than treating pressure; means for controlling the pressure of said treating chamber to a given treating pressure; means for treating said treated object under said treating pressure in said treating chamber.
Claim 14
Dependent Claim
79 words
A treatment apparatus for treating a treated object under a reduced pressure environment, which comprises: means for electrostatically adhering a treated object to a specimen table after the treated object is mounted on the specimen table in a gas environment of a spare treating chamber having pressure higher than treating pressure; means for controlling the pressure of a treating chamber to a given treating pressure; means for treating said treated object under said treating pressure in said treating chamber.
Claim 15
Dependent Claim
101 words
A treatment apparatus for treating a treated object under a reduced pressure environment, which comprises: means for electrostatically adhering a treated object to a specimen table having a reservoir after the treated object is mounted on the specimen table in a gas environment of a treating system having pressure higher than treating pressure; means for controlling the pressure of a treating chamber to a given treating pressure; means for transmitting heat between said specimen and said specimen table using said gas enclosed in said reservoir as well as for treating said treated object under said treating pressure in said treating chamber.
Claim 16
Dependent Claim
43 words
A treatment apparatus for treating a treated object under a reduced pressure environment according to any of claim 12 through claim 15, wherein said treatment apparatus for treating a treated object is a plasma treatment apparatus for treating a treated object with plasma.
Claim 17
Dependent Claim
43 words
A treatment apparatus for treating a treated object under a reduced pressure environment according to any of claim 12 through claim 15, wherein said treatment apparatus for treating a treated object is a treatment apparatus for treating a treated object with ion implantation.
Claim 18
Dependent Claim
47 words
A treatment apparatus for treating a treated object under a reduced pressure environment according to any of claim 12 through claim 15, wherein said treatment apparatus for treating a treated object is a molecular beam epitaxy treatment apparatus for treating a treated object with molecular beam epitaxy.
Claim 19
Dependent Claim
90 words
A treatment apparatus for treating a treated object under a reduced pressure environment according to claim 15, wherein said specimen table comprises an electrostatic adhering electrode having radially extended grooves on its surface and a hole for a pin for lifting up the specimen, and said reservoir enclosing the gas having a pressure higher than said treating pressure is between said wafer and the space that is formed from the grooves on said electrostatic adhering electrode to the gap between the pin for lifting up the specimen and the hole.
Claim 20
Dependent Claim
48 words
A treatment apparatus for treating a treated object under a reduced pressure environment according to claim 15, wherein said reservoir enclosing the gas having a pressure higher than said treating pressure is mounted on said specimen table and is opened to the surface of the electrostatic adhering electrode.
Claim 21
Dependent Claim
41 words
An electrostatic adhering apparatus for holding a wafer to be treated with plasma by electrostatic adhering force produced between the wafer and an insulating film, wherein the heat transfer coefficient between the wafer and the insulating film has a non-uniform distribution.
Claim 22
Dependent Claim
43 words
An electrostatic adhering apparatus according to claim 21, wherein the non-uniform distribution in the heat transfer coefficient is produced by means of forming contact portions and non-contact portions on the wafer alternately with varying the gap between the wafer and the insulating film.
Claim 23
Dependent Claim
38 words
An electrostatic adhering apparatus according to claim 21, wherein the non-uniform distribution in the heat transfer coefficient is produced by means of forming large roughness portions and small roughness portions alternately on the surface of the insulating film.
Claim 24
Dependent Claim
32 words
An electrostatic adhering apparatus according to claim 21, wherein the non-uniform distribution in the heat transfer coefficient is produced by means of forming the insulating film using different kinds of materials alternately.
Claim 25
Dependent Claim
23 words
An electrostatic adhering apparatus according to claim 22, wherein the gap between the wafer and the insulating film is formed by ultrasonic machining.
References Cited (Backward Citations)
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