EP0631325A2
Expired / Lapsed
EP
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Semiconductor device with an oriented non single crystal silicon thin film and method for its preparation
Assignee: Semiconductor Energy Laboratory Co Ltd
•
Filing: 1994-06-27
•
Granted: —
•
Expires: 2014-06-27
Abstract
Abstract A semiconductor device is disclosed. The semiconductor device has a crystalline silicon film as an active layer region. The crystalline silicon film has needle-like or columnar crystals oriented parallel to the substrate and having a crystal growth direction of (111) axis. A method for preparing the semiconductor device comprises steps of adding a catalytic element to an amorphous silicon film ; and heating the amorphous silicon film containing the catalytic element at a low temperature to crystallize the silicon film.
Inventors
- 👤 Hongyong Zhang
- 👤 Toru Takayama
- 👤 Yasuhiko Takemura
- 👤 Akiharu Miyanaga
- 👤 Hisashi Ohtani
- 👤 Junichi Takeyama
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-09 02:58
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/60; H10D30/67; H10D30/674; H10D30/6741; H10D30/6743; H10D30/6745; H10P; H10P14/00; H10P14/20; H10P14/38; H10P14/3802; H10P14/3806; H10D30/01; H10D30/021; H10D30/031; H10D30/6704; H10D30/6729; H10D30/673; H10D30/6731; H10D86/00; H10D86/40; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411; H10P14/3466; H10P14/3808; H10P14/3816; H10P95/00; H10P95/90
Claims Analysis
Total Claims: 75
Claim 1
Independent Claim
25 words
A semiconductor device comprising: a non-single crystal silicon semiconductor film with crystallinity provided on a substrate, wherein the crystal growth face is the face (111).
Claim 2
Dependent Claim
25 words
A semiconductor device comprising: a non-single crystal silicon semiconductor film with crystallinity provided on a substrate, wherein the crystal growth face is the face (111).
Claim 3
Dependent Claim
30 words
A semiconductor device comprising: a non-single crystal silicon semiconductor film with crystallinity provided on a substrate and containing a catalytic metal, wherein the crystal growth face is the face (111).
Claim 4
Dependent Claim
30 words
A semiconductor device comprising: a non-single crystal silicon semiconductor film with crystallinity provided on a substrate and containing a catalytic metal, wherein the crystal growth face is the face (111).
Claim 5
Dependent Claim
32 words
The device of claim 2 wherein the catalytic metal comprises one or more elements selected from the group consisting of Ni, Pd, Pt, Cu, Ag, Au, In, Sn, Pb, As and Sb.
Claim 6
Dependent Claim
30 words
The device of claim 2 wherein the catalytic metal comprises one or more elements selected from the group consisting of Group VIII, Group lllb, Group IVb and Group Vb elements.
Claim 7
Dependent Claim
24 words
The device of claim 2 wherein concentration of the catalytic metal is 1 x 10 16 atoms/cm 3 to 1 x 10 19 atoms/cm3.
Claim 8
Dependent Claim
69 words
A semiconductor device comprising: a non-single crystal silicon semiconductor film with crystallinity provided on a substrate, wherein crystal growth of the semiconductor film occurs in a direction roughly parallel to a surface of the substrate; the direction of the crystal growth roughly matches a direction of an axis <111>; and the direction of the crystal growth roughly matches a direction of migration of a carrier in the semiconductor device.
Claim 9
Dependent Claim
69 words
A semiconductor device comprising: a non-single crystal silicon semiconductor film with crystallinity provided on a substrate, wherein crystal growth of the semiconductor film occurs in a direction roughly parallel to a surface of the substrate; the direction of the crystal growth roughly matches a direction of an axis <111>; and the direction of the crystal growth roughly matches a direction of migration of a carrier in the semiconductor device.
Claim 10
Dependent Claim
57 words
A semiconductor device comprising: a non-single crystal silicon semiconductor film with crystallinity provided on a substrate, wherein the semiconductor film has a crystal grain boundary along a direction roughly parallel to a surface of the substrate; and the direction along the crystal grain boundary roughly matches a direction of migration of a carrier in the semiconductor device.
Claim 11
Dependent Claim
57 words
A semiconductor device comprising: a non-single crystal silicon semiconductor film with crystallinity provided on a substrate, wherein the semiconductor film has a crystal grain boundary along a direction roughly parallel to a surface of the substrate; and the direction along the crystal grain boundary roughly matches a direction of migration of a carrier in the semiconductor device.
Claim 12
Dependent Claim
70 words
A semiconductor device comprising: a non-single crystal silicon semiconductor film with crystallinity provided on a substrate, wherein crystal growth of the semiconductor film occurs in a direction roughly parallel to a surface of the substrate; the direction of the crystal growth has a higher electric conductivity than the other directions; and the direction of the crystal growth roughly matches a direction of migration of a carrier in the semiconductor device.
Claim 13
Dependent Claim
70 words
A semiconductor device comprising: a non-single crystal silicon semiconductor film with crystallinity provided on a substrate, wherein crystal growth of the semiconductor film occurs in a direction roughly parallel to a surface of the substrate; the direction of the crystal growth has a higher electric conductivity than the other directions; and the direction of the crystal growth roughly matches a direction of migration of a carrier in the semiconductor device.
Claim 14
Dependent Claim
60 words
A semiconductor device comprising: a transistor which employs a non-single crystal silicon semiconductor film with crystallinity provided on a substrate, wherein crystal growth of the semiconductor film occurs in a direction roughly parallel to a surface of the substrate; and the direction of the crystal growth roughly matches a direction of a carrier flowing in a channel of the transistor.
Claim 15
Dependent Claim
60 words
A semiconductor device comprising: a transistor which employs a non-single crystal silicon semiconductor film with crystallinity provided on a substrate, wherein crystal growth of the semiconductor film occurs in a direction roughly parallel to a surface of the substrate; and the direction of the crystal growth roughly matches a direction of a carrier flowing in a channel of the transistor.
Claim 16
Dependent Claim
75 words
A semiconductor device comprising: a transistor which employs a non-single crystal silicon semiconductor film with crystallinity provided on a substrate, wherein crystal growth of the semiconductor film occurs in a direction roughly parallel to a surface of the substrate; the direction of the crystal growth is roughly in a direction of an axis <111>; and the direction of the crystal growth roughly matches a direction of a carrier flowing in a channel of the transistor.
Claim 17
Dependent Claim
75 words
A semiconductor device comprising: a transistor which employs a non-single crystal silicon semiconductor film with crystallinity provided on a substrate, wherein crystal growth of the semiconductor film occurs in a direction roughly parallel to a surface of the substrate; the direction of the crystal growth is roughly in a direction of an axis <111>; and the direction of the crystal growth roughly matches a direction of a carrier flowing in a channel of the transistor.
Claim 18
Dependent Claim
72 words
A semiconductor device comprising: a non-single crystal silicon semiconductor film with crystallinity provided on a substrate, wherein crystal growth of the semiconductor film occurs in a direction roughly parallel to a surface of the substrate; the semiconductor device is provided in an intermediate region of the crystal growth of the semiconductor film; and the direction of the crystal growth roughly matches a direction of migration of a carrier in the semiconductor device.
Claim 19
Dependent Claim
72 words
A semiconductor device comprising: a non-single crystal silicon semiconductor film with crystallinity provided on a substrate, wherein crystal growth of the semiconductor film occurs in a direction roughly parallel to a surface of the substrate; the semiconductor device is provided in an intermediate region of the crystal growth of the semiconductor film; and the direction of the crystal growth roughly matches a direction of migration of a carrier in the semiconductor device.
Claim 20
Independent Claim
83 words
A method of preparing a semiconductor comprising: a step of introducing a catalytic element which promotes crystallization on one surface of an amorphous silicon film; a step of crystallizing part or all of the amorphous silicon film by heat treatment; and a step of irradiating a light onto the crystallized silicon film, wherein a crystal orientation of the silicon film is controlled by controlling a proportion of crystallization due to the heat treatment and a proportion of crystallization due to the light irradiation.
Claim 21
Independent Claim
83 words
A method of preparing a semiconductor comprising: a step of introducing a catalytic element which promotes crystallization on one surface of an amorphous silicon film; a step of crystallizing part or all of the amorphous silicon film by heat treatment; and a step of irradiating a light onto the crystallized silicon film, wherein a crystal orientation of the silicon film is controlled by controlling a proportion of crystallization due to the heat treatment and a proportion of crystallization due to the light irradiation.
Claim 22
Dependent Claim
32 words
The method of claim 12 wherein the catalytic element comprises one or more elements selected from the group consisting of Ni, Pd, Pt, Cu, Ag, Au, In, Sn, Pb, As and Sb.
Claim 23
Independent Claim
107 words
A method of preparing a semiconductor comprising: a step of introducing a catalytic element which promotes crystallization on one surface of an amorphous silicon film; a step of crystallizing part or all of the amorphous silicon film by heat treatment; and a step of irradiating a light onto the crystallized silicon film, wherein a crystal orientation of the silicon film is controlled by controlling a proportion of crystallization due to the heat treatment and a proportion of crystallization due to the light irradiation; and the control of the proportion of crystallization due to the heat treatment is effected by adjusting an amount of the catalytic element introduced.
Claim 24
Independent Claim
107 words
A method of preparing a semiconductor comprising: a step of introducing a catalytic element which promotes crystallization on one surface of an amorphous silicon film; a step of crystallizing part or all of the amorphous silicon film by heat treatment; and a step of irradiating a light onto the crystallized silicon film, wherein a crystal orientation of the silicon film is controlled by controlling a proportion of crystallization due to the heat treatment and a proportion of crystallization due to the light irradiation; and the control of the proportion of crystallization due to the heat treatment is effected by adjusting an amount of the catalytic element introduced.
Claim 25
Dependent Claim
32 words
The method of claim 14 wherein the catalytic element comprises one or more elements selected from the group consisting of Ni, Pd, Pt, Cu, Ag, Au, In, Sn, Pb, As and Sb.
Claim 26
Independent Claim
107 words
A method of preparing a semiconductor comprising: a step of introducing a catalytic element which promotes crystallization on one surface of an amorphous silicon film; a step of crystallizing part or all of the amorphous silicon film by heat treatment; and a step of irradiating a light onto the crystallized silicon film, wherein a crystal orientation of the silicon film is controlled by controlling a proportion of crystallization due to the heat treatment and a proportion of crystallization due to the light irradiation; and the control of the proportion of crystallization due to the heat treatment is effected by adjusting temperature and/or time of the heat treatment.
Claim 27
Independent Claim
107 words
A method of preparing a semiconductor comprising: a step of introducing a catalytic element which promotes crystallization on one surface of an amorphous silicon film; a step of crystallizing part or all of the amorphous silicon film by heat treatment; and a step of irradiating a light onto the crystallized silicon film, wherein a crystal orientation of the silicon film is controlled by controlling a proportion of crystallization due to the heat treatment and a proportion of crystallization due to the light irradiation; and the control of the proportion of crystallization due to the heat treatment is effected by adjusting temperature and/or time of the heat treatment.
Claim 28
Dependent Claim
32 words
The method of claim 16 wherein the catalytic element comprises one or more elements selected from the group consisting of Ni, Pd, Pt, Cu, Ag, Au, In, Sn, Pb, As and Sb.
Claim 29
Independent Claim
109 words
A method of preparing a semiconductor comprising: a step of introducing a catalytic element which promotes crystallization on one surface of an amorphous silicon film; a step of crystallizing part or all of the amorphous silicon film by heat treatment; and a step of irradiating a light onto the crystallized silicon film, wherein a crystal orientation of the silicon film is controlled by controlling a proportion of crystallization due to the heat treatment and a proportion of crystallization due to the light irradiation; and the control of the proportion of crystallization due to the light irradiation is effected by adjusting an irradiation intensity and/or irradiation time of the light.
Claim 30
Independent Claim
109 words
A method of preparing a semiconductor comprising: a step of introducing a catalytic element which promotes crystallization on one surface of an amorphous silicon film; a step of crystallizing part or all of the amorphous silicon film by heat treatment; and a step of irradiating a light onto the crystallized silicon film, wherein a crystal orientation of the silicon film is controlled by controlling a proportion of crystallization due to the heat treatment and a proportion of crystallization due to the light irradiation; and the control of the proportion of crystallization due to the light irradiation is effected by adjusting an irradiation intensity and/or irradiation time of the light.
Claim 31
Dependent Claim
32 words
The method of claim 18 wherein the catalytic element comprises one or more elements selected from the group consisting of Ni, Pd, Pt, Cu, Ag, Au, In, Sn, Pb, As and Sb.
Claim 32
Independent Claim
83 words
A method of preparing a semiconductor comprising: a step of introducing a catalytic element which promotes crystallization on a substrate having an insulation surface; a step of forming an amorphous silicon film on the substrate onto which the catalytic element has been introduced; a step of crystallizing part or all of the amorphous silicon film by heat treatment; and a step of irradiating a light onto the crystallized silicon film to obtain a crystalline silicon film oriented roughly in a direction of (111).
Claim 33
Independent Claim
83 words
A method of preparing a semiconductor comprising: a step of introducing a catalytic element which promotes crystallization on a substrate having an insulation surface; a step of forming an amorphous silicon film on the substrate onto which the catalytic element has been introduced; a step of crystallizing part or all of the amorphous silicon film by heat treatment; and a step of irradiating a light onto the crystallized silicon film to obtain a crystalline silicon film oriented roughly in a direction of (111).
Claim 34
Dependent Claim
32 words
The method of claim 20 wherein the catalytic element comprises one or more elements selected from the group consisting of Ni, Pd, Pt, Cu, Ag, Au, In, Sn, Pb, As and Sb.
Claim 35
Independent Claim
108 words
A method of preparing a semiconductor comprising: a step of forming an amorphous silicon film on a substrate having an insulation surface; a step of introducing a catalytic element which promotes crystallization, on a partial region on one surface of the amorphous silicon film; a step of causing crystal growth from the region into which the catalytic element has been introduced, in a direction parallel to the substrate by heat treatment; and a step of irradiating a light on the silicon film which has undergone the crystal growth, wherein control of a crystal orientation of the silicon film is effected by controlling thickness of the amorphous silicon film.
Claim 36
Independent Claim
108 words
A method of preparing a semiconductor comprising: a step of forming an amorphous silicon film on a substrate having an insulation surface; a step of introducing a catalytic element which promotes crystallization, on a partial region on one surface of the amorphous silicon film; a step of causing crystal growth from the region into which the catalytic element has been introduced, in a direction parallel to the substrate by heat treatment; and a step of irradiating a light on the silicon film which has undergone the crystal growth, wherein control of a crystal orientation of the silicon film is effected by controlling thickness of the amorphous silicon film.
Claim 37
Dependent Claim
32 words
The method of claim 22 wherein the catalytic element comprises one or more elements selected from the group consisting of Ni, Pd, Pt, Cu, Ag, Au, In, Sn, Pb, As and Sb.
Claim 38
Independent Claim
78 words
A method of preparing a semiconductor comprising: a step of introducing a catalytic element which promotes crystallization, on one surface of an amorphous silicon film; a step of crystallizing part or all of the amorphous silicon film by heat treatment; and a step of irradiating a light onto the crystallized silicon film, wherein particle size of the crystallized silicon film is controlled by controlling an amount of the catalytic element introduced and/or a temperature of the heat treatment.
Claim 39
Independent Claim
78 words
A method of preparing a semiconductor comprising: a step of introducing a catalytic element which promotes crystallization, on one surface of an amorphous silicon film; a step of crystallizing part or all of the amorphous silicon film by heat treatment; and a step of irradiating a light onto the crystallized silicon film, wherein particle size of the crystallized silicon film is controlled by controlling an amount of the catalytic element introduced and/or a temperature of the heat treatment.
Claim 40
Dependent Claim
32 words
The method of claim 24 wherein the catalytic element comprises one or more elements selected from the group consisting of Ni, Pd, Pt, Cu, Ag, Au, In, Sn, Pb, As and Sb.
Claim 41
Independent Claim
77 words
A method of preparing a semiconductor comprising: a step of introducing a catalytic element which promotes crystallization, on one surface of an amorphous silicon film; a step of crystallizing part or all of the amorphous silicon film by heat treatment; and a step of irradiating a light onto the crystallized silicon film, wherein particle size of the crystallized silicon film is controlled by controlling an amount of the catalytic element introduced and/or time of the heat treatment.
Claim 42
Independent Claim
77 words
A method of preparing a semiconductor comprising: a step of introducing a catalytic element which promotes crystallization, on one surface of an amorphous silicon film; a step of crystallizing part or all of the amorphous silicon film by heat treatment; and a step of irradiating a light onto the crystallized silicon film, wherein particle size of the crystallized silicon film is controlled by controlling an amount of the catalytic element introduced and/or time of the heat treatment.
Claim 43
Dependent Claim
32 words
The method of claim 26 wherein the catalytic element comprises one or more elements selected from the group consisting of Ni, Pd, Pt, Cu, Ag, Au, In, Sn, Pb, As and Sb.
Claim 44
Dependent Claim
56 words
A semiconductor comprising: a crystalline silicon film provided on a substrate having an insulation surface, wherein the crystalline silicon film exhibits crystal growth from a catalytic element which is introduced at an interface between the substrate and the silicon film and promotes crystallization; and the crystalline silicon film is oriented roughly in a direction of (111).
Claim 45
Dependent Claim
56 words
A semiconductor comprising: a crystalline silicon film provided on a substrate having an insulation surface, wherein the crystalline silicon film exhibits crystal growth from a catalytic element which is introduced at an interface between the substrate and the silicon film and promotes crystallization; and the crystalline silicon film is oriented roughly in a direction of (111).
Claim 46
Dependent Claim
32 words
The semiconductor of claim 28 wherein the catalytic element comprises one or more elements selected from the group consisting of Ni, Pd, Pt, Cu, Ag, Au, In, Sn, Pb, As and Sb.
Claim 47
Dependent Claim
32 words
A semiconductor comprising: a crystalline silicon film, wherein (111) orientation ratio of the silicon film is 0.33 to 1; and a catalytic element which promotes crystallization is added to the silicon film.
Claim 48
Dependent Claim
32 words
A semiconductor comprising: a crystalline silicon film, wherein (111) orientation ratio of the silicon film is 0.33 to 1; and a catalytic element which promotes crystallization is added to the silicon film.
Claim 49
Dependent Claim
32 words
The semiconductor of claim 30 wherein the catalytic element comprises one or more elements selected from the group consisting of Ni, Pd, Pt, Cu, Ag, Au, In, Sn, Pb, As and Sb.
Claim 50
Dependent Claim
62 words
A semiconductor comprising: a crystalline silicon film provided on a substrate having an insulation surface, a portion of the crystalline silicon film having exhibited crystal growth in a direction parallel to the substrate, wherein (111) orientation ratio of the portion having exhibited crystal growth is 0.67 to 1; and a catalytic element which promotes crystallization is added to the crystalline silicon film.
Claim 51
Dependent Claim
62 words
A semiconductor comprising: a crystalline silicon film provided on a substrate having an insulation surface, a portion of the crystalline silicon film having exhibited crystal growth in a direction parallel to the substrate, wherein (111) orientation ratio of the portion having exhibited crystal growth is 0.67 to 1; and a catalytic element which promotes crystallization is added to the crystalline silicon film.
Claim 52
Dependent Claim
32 words
The semiconductor of claim 32 wherein the catalytic element comprises one or more elements selected from the group consisting of Ni, Pd, Pt, Cu, Ag, Au, In, Sn, Pb, As and Sb.
Claim 53
Dependent Claim
73 words
A semiconductor comprising: a crystalline silicon film provided on a substrate having an insulation surface, a portion of the crystalline silicon film having exhibited crystal growth in a direction parallel to the substrate, wherein (111) orientation ratio of the portion having exhibited crystal growth is 0.72 to 1; thickness of the crystalline silicon film is 800 A or less; and a catalytic element which promotes crystallization is added to the crystalline silicon film.
Claim 54
Dependent Claim
73 words
A semiconductor comprising: a crystalline silicon film provided on a substrate having an insulation surface, a portion of the crystalline silicon film having exhibited crystal growth in a direction parallel to the substrate, wherein (111) orientation ratio of the portion having exhibited crystal growth is 0.72 to 1; thickness of the crystalline silicon film is 800 A or less; and a catalytic element which promotes crystallization is added to the crystalline silicon film.
Claim 55
Dependent Claim
32 words
The semiconductor of claim 34 wherein the catalytic element comprises one or more elements selected from the group consisting of Ni, Pd, Pt, Cu, Ag, Au, In, Sn, Pb, As and Sb.
Claim 56
Dependent Claim
37 words
A semiconductor comprising: a crystalline silicon film into which has been introduced a catalytic element which promotes crystallization, wherein particle size of the crystalline silicon film is controlled by controlling an amount of the catalytic element introduced.
Claim 57
Dependent Claim
37 words
A semiconductor comprising: a crystalline silicon film into which has been introduced a catalytic element which promotes crystallization, wherein particle size of the crystalline silicon film is controlled by controlling an amount of the catalytic element introduced.
Claim 58
Dependent Claim
32 words
The semiconductor of claim 36 wherein the catalytic element comprises one or more elements selected from the group consisting of Ni, Pd, Pt, Cu, Ag, Au, In, Sn, Pb, As and Sb.
Claim 59
Independent Claim
41 words
A method for forming a semiconductor device comprising the steps of: preparing a liquid containing a crystallization promoting agent therein; forming a non-single crystalline semiconductor layer in contact with said liquid on a substrate; and crystallizing said non-single crystalline semiconductor layer.
Claim 60
Independent Claim
41 words
A method for forming a semiconductor device comprising the steps of: preparing a liquid containing a crystallization promoting agent therein; forming a non-single crystalline semiconductor layer in contact with said liquid on a substrate; and crystallizing said non-single crystalline semiconductor layer.
Claim 61
Dependent Claim
27 words
The method of claim 38 wherein said liquid is coated on a portion of said semiconductor layer after the formation of said semiconductor layer on said substrate.
Claim 62
Dependent Claim
16 words
The method of claim 38 wherein said crystallizing is carried out by heating said semiconductor layer.
Claim 63
Dependent Claim
29 words
The method of claim 38 wherein said crystallization promoting agent is selected from the group consisting of Ni, Pd, Pt, Cu, Ag, Au, In, Sn, Pb, As and Sb.
Claim 64
Independent Claim
52 words
A method for forming a semiconductor device comprising the following sequential steps of: providing on an insulating surface a semiconductor layer, said semiconductor layer doped with a crystallization promoting agent at least partly; crystallizing said semiconductor layer by heating; and further crystallizing said semiconductor layer by irradiating said semiconductor layer with light.
Claim 65
Independent Claim
52 words
A method for forming a semiconductor device comprising the following sequential steps of: providing on an insulating surface a semiconductor layer, said semiconductor layer doped with a crystallization promoting agent at least partly; crystallizing said semiconductor layer by heating; and further crystallizing said semiconductor layer by irradiating said semiconductor layer with light.
Claim 66
Dependent Claim
30 words
A crystalline silicon film comprising a silicon film formed on a substrate and a crystallization promotion agent said crystallization promotion agent being arranged to enhance crystallinity of said silicon film.
Claim 67
Dependent Claim
30 words
A crystalline silicon film comprising a silicon film formed on a substrate and a crystallization promotion agent said crystallization promotion agent being arranged to enhance crystallinity of said silicon film.
Claim 68
Independent Claim
41 words
A method of manufacturing a crystalline silicon film, said method comprising forming a silicon film on a substrate, using a crystallization promotion agent to enhance crystal growth and heating said silicon film and crystallization promotion agent to form said crystalline film.
Claim 69
Independent Claim
41 words
A method of manufacturing a crystalline silicon film, said method comprising forming a silicon film on a substrate, using a crystallization promotion agent to enhance crystal growth and heating said silicon film and crystallization promotion agent to form said crystalline film.
Claim 70
Dependent Claim
50 words
A field effect transistor including a channel comprising a crystalline silicon film, wherein said crystalline silicon film has a crystal orientation at an angle between 0 0 - 90° to the direction of the channel, said angle being determined to provide a certain degree of electron mobility in said channel.
Claim 71
Dependent Claim
50 words
A field effect transistor including a channel comprising a crystalline silicon film, wherein said crystalline silicon film has a crystal orientation at an angle between 0 0 - 90° to the direction of the channel, said angle being determined to provide a certain degree of electron mobility in said channel.
Claim 72
Dependent Claim
30 words
A field effect transistor including a channel and a gate electrode formed with said channel, wherein said channel extends beyond a region under the direct influence of said gate electrode.
Claim 73
Dependent Claim
30 words
A field effect transistor including a channel and a gate electrode formed with said channel, wherein said channel extends beyond a region under the direct influence of said gate electrode.
Claim 74
Independent Claim
20 words
A method of manufacturing a crystalline silicon film characterized in that a crystallization promotion agent is used to enhance crystallization.
Claim 75
Independent Claim
20 words
A method of manufacturing a crystalline silicon film characterized in that a crystallization promotion agent is used to enhance crystallization.
References Cited (Backward Citations)
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