EP0631309A2
Expired / Lapsed
EP
⏱️ 0.0 years remaining
Semiconductor device with contact structure and method of manufacturing the same
Assignee: JFE Steel Corp
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Filing: 1994-06-27
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Granted: —
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Expires: 2014-06-27
Abstract
Abstract A semiconductor device with a contact structure includes a silicon substrate (21), a diffusion region (28) formed in a surface of the silicon substrate, a silicide film (29c) of high melting point metal deposited on the diffusion region, an insulating film (30) formed on the silicon substrate, a contact hole (31) formed in the insulating film such that the silicide film is exposed at a bottom of the contact hole, an anti-diffusion film (35) formed on the exposed surface of the silicide film at the bottom of the contact film, a plug (32) formed in the contact hole by selective Al CVD, and a metal wiring (33) formed on the insulating film such that the metal wiring is electrically connected to the diffusion region by means of the plug, anti-diffusion film and silicide film. The anti-diffusion film may be formed by nitriding the surface of the silicide film. <IMAGE>
Inventors
- 👤 Hiroshi C/O Kawasaki Steel Corporation Shinriki
- 👤 Nobuyuki C/O Kawasaki Steel Corporation Takeyasu
- 👤 Takayuki C/O Kawasaki Steel Corporation Komiya
- 👤 Tomohiro C/O Kawasaki Steel Corporation Ohta
- 👤 Hiroshi C/O Kawasaki Steel Corporation Yamamoto
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-01 14:06
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/056; H10W20/057
Claims Analysis
Total Claims: 32
Claim 1
Independent Claim
106 words
A semiconductor device comprising a substrate (21) supporting a semiconductor device portion (28, 25) to which electrical connection is made and upon which there are in turn a conductive region (29) and an insulating film (30), there being a contact arrangement comprising a contact hole (31) in the insulating layer, a plug (32) in the hole and metal wiring (33) on the insulating film (30) and electrically connected to the conductive region by means of the plug, characterised in that the plug (32) is of aluminum and a silicide film (29) of high melting point metal is at at least the bottom portion of the plug.
Claim 2
Dependent Claim
134 words
A semiconductor device with a contact structure comprising: a semiconductor substrate having a surface; at least one of a junction and a gate insulating film formed on said surface of the semiconductor substrate; a conductive region formed on said surface of the semiconductor substrate; an insulating film formed on said conductive region; a contact hole formed in said insulating film, an area of said contact hole being not larger than 0.7 µm² ; a plug formed in said contact hole and containing aluminum; a silicide film of high melting point metal formed at least at a bottom of said plug; and a metal wiring formed on said insulating film such that the metal wiring is electrically connected to said conductive region by means of said plug and silicide film, said metal wiring containing aluminum.
Claim 3
Dependent Claim
24 words
A semiconductor device according to claim 1 or 2, and comprising an anti-diffusion film formed at least on a top surface of the plug.
Claim 4
Dependent Claim
31 words
A semiconductor device according to claim 1, 2 or 3 wherein said plug is formed by an aluminum alloy containing silicon at the concentration of not lower than 0.7 weight %.
Claim 5
Dependent Claim
46 words
A semiconductor device according to claim 1, 2, 3 or 4, and comprising an anti-diffusion film formed at least at the bottom of the contact hole, the metal wiring being electrically connected to said conductive region by means of said plug, anti-diffusion film and silicide film.
Claim 6
Dependent Claim
25 words
A semiconductor device according to any one of the preceding claims, wherein said conductive region is formed of a diffusion region formed on a junction.
Claim 7
Dependent Claim
28 words
A semiconductor device according to any one of claims 1 to 5, wherein said conductive region is formed of a gate electrode formed on a gate insulating film.
Claim 8
Dependent Claim
28 words
A semiconductor device according to claim 7, wherein said gate electrode is formed by one of a highly doped poly-silicon film and a high melting point metal silicide.
Claim 9
Dependent Claim
36 words
A semiconductor device according to any one of the preceding claims, wherein said silicide film of high melting point metal is made of a material selected from the group consisting of TSi₂, CoSi₂, NiSi and PtSi.
Claim 10
Dependent Claim
36 words
A semiconductor device according to claim 5, or any one of claims 6 to 9 when appended to claim 5, wherein said anti-diffusion film has a thickness within a range from 2 nm to 50 nm.
Claim 11
Dependent Claim
29 words
A semiconductor device according to any one of the preceding claims, wherein said plug is directly contacted with the insulating film at a side wall of the contact hole.
Claim 12
Dependent Claim
56 words
A semiconductor device according to claim 5, or any one of claims 6 to 11 when appended to claim 5, wherein said anti-diffusion film is formed by at least one of nitride, oxide nitride and boride of a high melting point metal selected from the group consisting of Ti, Zr, Hf, W, Ta, Nb and Mo.
Claim 13
Dependent Claim
26 words
A semiconductor device according to any one of the preceding claims, wherein said silicide film is formed on an entire upper surface of the conductive region.
Claim 14
Dependent Claim
34 words
A semiconductor device according to claim 5, or any one of claims 5 to 12 when appended to claim 5, wherein said anti-diffusion film is formed only at the bottom of the contact hole.
Claim 15
Dependent Claim
29 words
A semiconductor device according to claim 14, wherein said anti-diffusion film is formed by one of nitride and boride of the high melting point metal of said silicide film.
Claim 16
Dependent Claim
25 words
A semiconductor device according to any one of the preceding claims, wherein said silicide film is formed only at the bottom of the contact hole.
Claim 17
Independent Claim
162 words
A method of manufacturing a semiconductor device with a contact structure comprising the steps of: preparing a semiconductor substrate which has a surface: forming a conductive region on at least one of a junction and gate insulating film on said surface of the semiconductor substrate; forming an insulating film on said conductive region; forming a contact hole having an area not larger than 0.7 µm² in said insulating film; forming a silicide film of high melting point metal at least at a bottom of said contact hole prior to the step of forming the insulating film and/or after the step of forming the contact hole; forming a plug containing aluminum in said contact hole by depositing a metal containing aluminum by a chemical vapor deposition using an organic aluminum compound gas; and forming a metal wiring containing aluminum on said insulating film such that the metal wiring is electrically connected to said conductive region by means of said plug and silicide film.
Claim 18
Dependent Claim
31 words
A method according to claim 17, and comprising a step of forming an anti-diffusion film at least on a top surface of said plug after said step of forming the plug.
Claim 19
Dependent Claim
39 words
A method according to claim 18 or 19, wherein said step of forming the plug is performed such that the plug is formed by an aluminum alloy containing silicon at the concentration of not lower than 0.7 weight %.
Claim 20
Dependent Claim
52 words
A method according to claim 17, 18 or 19, and comprising forming an anti-diffusion film at least on said silicide film at the bottom of the contact hole so that the metal wiring containing aluminum is electrically connected to said conductive region by means of said plug, anti-diffusion film and silicide film.
Claim 21
Independent Claim
50 words
A method according to any one of claims 17 to 20, wherein said step of forming the silicide film of high melting point metal is performed prior to the step of forming the insulating film, and said silicide film is formed on an entire upper surface of said conductive region.
Claim 22
Independent Claim
49 words
A method according to any one of claims 17 to 20, wherein said step of forming the silicide film of high melting point metal is performed after the step of forming the contact hole by depositing the silicide film in said contact hole by a selective chemical vapor deposition.
Claim 23
Independent Claim
41 words
A method according to any one of claims 17 to 22, wherein said silicide film of high melting point metal is TiSi₂, and said selective chemical vapor deposition of the silicide film is performed by using TiCl₄ gas and SiH₄ gas.
Claim 24
Independent Claim
83 words
A method according to any one of claims 17 to 23, wherein said step of forming the silicide film of high melting point metal is performed prior to the step of forming the insulating films but after the step of forming the contact hole, and the step of forming the silicide film of high melting point metal performed after the step of forming the insulating film is performed by depositing the silicide film in said contact hole by a selective chemical vapor deposition.
Claim 25
Dependent Claim
47 words
A method according to claim 20, or to any one of claims 21 to 24 when appended to claim 20, wherein said step of forming the anti-diffusion film is performed by nitriding the surface of said silicide film of high melting point metal under a nitriding atmosphere.
Claim 26
Dependent Claim
18 words
A method according to claim 25, wherein said high melting point metal of the silicide film is Ti.
Claim 27
Dependent Claim
44 words
A method according to claim 25 or 26, wherein said step of forming the anti-diffusion film is performed after forming the contact hole by nitriding the surface of the silicide film of high melting point metal exposed at the bottom of the contact hole.
Claim 28
Dependent Claim
48 words
A method according to claim 20, or to any one of claims 21 to 27 when appended to claim 20, wherein said step of forming the anti-diffusion film is performed such that the thickness of the anti-diffusion film is within a range from 2 nm to 50 nm.
Claim 29
Dependent Claim
55 words
A method according to claim 20, or to any one of claims 21 to 28 when appended to claim 20, wherein said step of forming the anti-diffusion film is performed by using an atmosphere containing ammonia gas at a temperature within a range from 800°C to 900°C for a time not longer than 60 seconds.
Claim 30
Independent Claim
72 words
A method according to any one of claims 17 to 29, wherein at least two contact holes having different depths are formed in the insulating film and at least two plugs are formed in said contact holes such that the deepest contact hole is sufficiently filled with a plug, and then a part of a plug which protrudes from the surface of the insulating film is removed by a chemical mechanical polishing.
Claim 31
Independent Claim
105 words
A method of manufacturing a semiconductor device with a contact structure comprising the steps of: preparing a semiconductor substrate which has a surface; forming a conductive region on said surface of the semiconductor substrate; forming an insulating film on said conductive region; forming a contact hole in said insulating film; performing a nitriding treatment to terminate dangling bonds on the surface of the insulating film by heating the surface of the semiconductor substrate in a nitriding atmosphere; and forming a plug containing aluminum in said contact hole by depositing a metal containing aluminum by a selective chemical vapor deposition using an organic aluminum compound gas.
Claim 32
Dependent Claim
36 words
A method according to claim 31, wherein said nitriding treatment is performed in an atmosphere containing ammonia gas at a temperature within a range from 800°C to 900°C for a time not longer than 60 seconds.
References Cited (Backward Citations)
No citation records indexed.
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