Claims Analysis
Total Claims: 16
Claim 1
Independent Claim
100 words
A sealing apparatus useful in a semiconductor processing when a first portion of a semiconductor processing chamber is operated at one pressure while a second portion of said processing chamber is operated at a higher pressure and when said sealing apparatus is used to isolate said first and second portions of said process chamber, said sealing apparatus (138; 140; 300) comprising: a thin, metal-comprising layer (202; 302) brazed to at least two different surfaces, wherein said at least two different surfaces exhibit a difference in linear thermal expansion coefficient of at least 3 x 10⁻³ in./in./°C (m/m/°C), measured at 600°C.
Claim 2
Dependent Claim
33 words
The sealing apparatus of claim 1, wherein a brazing material (204; 304) is used to provide a filler between said metal-comprising layer (202; 302) and each of said at least two different surfaces.
Claim 3
Dependent Claim
20 words
The sealing apparatus of claim 2, wherein said brasing material (204; 304) is metal-comprising and is capable of stress relaxation.
Claim 4
Dependent Claim
27 words
The sealing apparatus of claim 1 or 2, wherein a cross-sectional thickness (a) of said thin, metal-comprising layer (202) is less than about 0.039 in. (1 mm).
Claim 5
Dependent Claim
19 words
The sealing apparatus of claim 4, wherein said metal-comprising layer (202; 302) is in the form of a ribbon.
Claim 6
Dependent Claim
19 words
The sealing apparatus of claim 4, wherein said metal-comprising layer (202; 302) is in the form of a band.
Claim 7
Dependent Claim
13 words
The sealing means of claim 5, wherein said ribbon has an accordion shape.
Claim 8
Dependent Claim
13 words
The sealing apparatus of claim 6, wherein said band has an accordion shape.
Claim 9
Dependent Claim
58 words
The sealing apparatus of any of claims 1 to 8, wherein said sealing apparatus (138; 140; 300) is capable of withstanding a pressure differential of at least 10,34 x 10⁴ Pa (15 psi) over an operating temperature range between about O°C and about 600°C, while bridging said at least two materials having said difference in thermal expansion coefficient.
Claim 10
Dependent Claim
36 words
The sealing apparatus of any of claims 1 to 9, wherein said first portion of said semiconductor processing chamber includes an upper surface of an electrostatic chuck (102) which contacts a substrate (104) to be processed.
Claim 11
Dependent Claim
34 words
The sealing apparatus of claim 10, wherein said second portion of said processing chamber includes a means (118, 124) of conductive/convective heat transfer to permit cooling of a lower surface of said electrostatic chuck.
Claim 12
Independent Claim
171 words
A method of providing a seal between adjacent surfaces of a semiconductor processing apparatus, which method enables the operation of one portion of a semiconductor processing chamber at one pressure while another portion of said processing chamber is operated at a higher pressure, wherein said seal bridges at least two surfaces which exhibit different linear thermal expansion coefficients and when the operational temperature range of said processing chamber is at least 300°C, said method comprising: a) providing at least two material surfaces which exhibit a different thermal expansion coefficient; b) providing a thin, metal-comprising layer (202; 302) of material having a linear coefficient of expansion closer to the lowest linear thermal expansion coefficient material to be bridged; c) brasing said metal-comprising layer (202; 302) of material to each of the at least two material surfaces which must be bridged by said seal, whereby said metal-comprising layer (202; 302), a brazing material (204; 304), and said material surfaces to which the metal-comprising layer (202; 302) is brazed act as a sealing apparatus.
Claim 13
Dependent Claim
21 words
The method of claim 12, wherein said brasing is carried out using a brazing material (204; 304) capable of relaxing stress.
Claim 14
Dependent Claim
25 words
The method of claim 12 or 13, wherein said difference in thermal expansion coefficient is at least 3 x 10⁻³ in./in./°C (m/m/°C) at about 600°C.
Claim 15
Independent Claim
54 words
An apparatus which can be used in combination with a substrate support platen (106) in semiconductor processing to capture back-scattered deposition materials and prevent the need to clean outer edges of said support platen (106), said apparatus comprising a removable insert (112) which is located at said outer edges of said support platen (106).
Claim 16
Dependent Claim
43 words
The apparatus of claim 15, wherein the thermal expansion coefficient of said removable insert (112) is sufficiently close to the thermal expansion coefficient of said platen (106) that the creation of significant stresses between said insert (112) and said platen surface is avoided.