EP0624801A1
Expired / Lapsed
EP
⏱️ 0.0 years remaining
Inspection apparatus, inspection method and semiconductor device
Assignee: Panasonic Holdings Corp
•
Filing: 1994-04-06
•
Granted: —
•
Expires: 2014-04-06
Abstract
Abstract There are disposed (i) a signal transmission passage extending, on the top surface of a ceramic supporting substrate, from one end to the other end thereof, (ii) a grounding electrode on the entire top surface of the supporting substrate except for its portion where the signal transmission passage is disposed and for its portion adjacent to the first-mentioned portion, and (iii) a detecting electrode at the underside of the one end of the supporting substrate. A microstrip line is formed by the signal transmission passage and those portions of the grounding electrode which are opposite to each other with the signal transmission passage held therebetween. Each of the grounding electrode, the signal transmission passage and the detecting electrode is made of an alloy containing 90 % or more of gold. The signal transmission passage and the detecting electrode are electrically connected to each other by an alloy of the type above-mentioned through a through-hole formed in the supporting substrate at the one end thereof.
Inventors
- 👤 Tadayoshi Nakatsuka
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-31 12:45
CPC Classifications
G; G01; G01R; G01R1/00; G01R1/02; G01R1/06; G01R1/067; G01R1/06772
Claims Analysis
Total Claims: 60
Claim 1
Independent Claim
149 words
An inspection apparatus comprising: an insulator substrate made of a material having a high dielectric constant; a signal transmission passage made of an electrically conductive material and formed on the top surface of said insulator substrate; a grounding electrode made of an electrically conductive material and formed at least on the top surfaces of those portions of said insulator substrate which are opposite to each other with another portion of said insulator substrate where said signal transmission passage is disposed held therebetween; a microstrip line formed by said signal transmission passage and those portions of said grounding electrode which are opposite to each other with said signal transmission passage held therebetween; and a detecting electrode made of an electrically conductive material and formed at the underside of said insulator substrate, said detecting electrode being electrically connected to said signal transmission passage through a through-hole formed in said insulator substrate.
Claim 2
Dependent Claim
92 words
An inspection apparatus according to Claim 1, wherein the signal transmission passage is divided into first, second and third partial transmission passages, and the microstrip line has (i) a capacitor having one electrode electrically connected to said first partial transmission passage and the other electrode electrically connected to said second partial transmission passage, and (ii) a transistor of which each electrode is electrically connected, by wire bonding, to the grounding electrode, said second partial transmission passage or said third partial transmission passage, said transistor being adapted to amplify a high frequency signal.
Claim 3
Dependent Claim
53 words
An inspection apparatus according to Claim 2, wherein each of the one and the other electrodes of the capacitor comprises a metallic layer, and said capacitor is an MIM capacitor comprising said metallic layers and an insulator layer made of a material having a high dielectric constant and interposed between said metallic layers.
Claim 4
Dependent Claim
93 words
An inspection apparatus according to Claim 1, wherein the signal transmission passage is divided into first, second and third partial transmission passages, and the microstrip line has (i) a capacitor having one electrode electrically connected to said first partial transmission passage and the other electrode electrically connected to said second partial transmission passage, and (ii) a transistor of which each electrode is electrically connected, by flip chip bonding, to the grounding electrode, said second partial transmission passage or said third partial transmission passage, said transistor being adapted to amplify a high frequency signal.
Claim 5
Dependent Claim
52 words
An inspection apparatus according to Claim 4, wherein each of the one and the other electrodes of the capacitor comprises a metallic layer, said capacitor is an MIM capacitor comprising said metallic layers and an insulator layer made of a material having a high dielectric constant and interposed between said metallic layers.
Claim 6
Dependent Claim
144 words
An inspection apparatus comprising: an insulator substrate made of a material having a high dielectric constant; a signal transmission passage made of an electrically conductive material and formed inside of said insulator substrate; a detecting electrode made of an electrically conductive material and formed at the underside of said insulator substrate, said detecting electrode being electrically connected to said signal transmission passage through an introduction hole which is formed in said insulator substrate and which extends to the inside from said underside thereof; a first grounding electrode made of an electrically conductive material and formed on the entire top surface of said insulator substrate; and a second grounding electrode made of an electrically conductive material and formed at the entire underside of said insulator substrate except for its portion where said detecting electrode is disposed and for its portion adjacent to said first-mentioned portion.
Claim 7
Dependent Claim
95 words
An inspection apparatus according to Claim 6, wherein the signal transmission passage is divided into first, second and third partial transmission passages, said inspection apparatus further comprising: a capacitor having one electrode electrically connected to said first partial transmission passage and the other electrode electrically connected to said second partial transmission passage; and a transistor of which each electrode is electrically connected, by wire bonding, to the first grounding electrode, the second grounding electrode, said second partial transmission passage or said third partial transmission passage, said transistor being adapted to amplify a high frequency signal.
Claim 8
Dependent Claim
53 words
An inspection apparatus according to Claim 7, wherein each of the one and the other electrodes of the capacitor comprises a metallic layer, and said capacitor is an MIM capacitor comprising said metallic layers and an insulator layer made of a material having a high dielectric constant and interposed between said metallic layers.
Claim 9
Dependent Claim
96 words
An inspection apparatus according to Claim 6, wherein the signal transmission passage is divided into first, second and third partial transmission passages, said inspection apparatus further comprising: a capacitor having one electrode electrically connected to said first partial transmission passage and the other electrode electrically connected to said second partial transmission passage; and a transistor of which each electrode is electrically connected, by flip chip bonding, to the first grounding electrode, the second grounding electrode, said second partial transmission passage or said third partial transmission passage, said transistor being adapted to amplify a high frequency signal.
Claim 10
Dependent Claim
53 words
An inspection apparatus according to Claim 9, wherein each of the one and the other electrodes of the capacitor comprises a metallic layer, and said capacitor is an MIM capacitor comprising said metallic layers and an insulator layer made of a material having a high dielectric constant and interposed between said metallic layers.
Claim 11
Independent Claim
271 words
A method of inspecting a semiconductor device with the use of an inspection apparatus, in which said semiconductor device comprises (i) an MIM capacitor having a first metallic layer formed on a semiconductor substrate, an insulator layer formed on said first metallic layer and a second metallic layer formed on said insulator layer, and (ii) an insulator protective layer formed on said MIM capacitor, said inspection apparatus comprises: an insulator substrate made of a material having a high dielectric constant; a signal transmission passage made of an electrically conductive material and formed on the top surface of said insulator substrate; a grounding electrode made of an electrically conductive material and formed at least on the top surfaces of those portions of said insulator substrate which are opposite to each other with another portion of said insulator substrate where said signal transmission passage is disposed held therebetween; a microstrip line formed by said signal transmission passage and those portions of said grounding electrode which are opposite to each other with said signal transmission passage held therebetween; and a detecting electrode made of an electrically conductive material and formed at the underside of said insulator substrate, said detecting electrode being electrically connected to said signal transmission passage through a through-hole formed in said insulator substrate, and with said detecting electrode of said inspection apparatus brought close to or contacted with said insulator protective layer of said semiconductor device, said detecting electrode of said inspection apparatus is adapted to supply a high frequency signal to said MIM capacitor of said semiconductor device, so that the high frequency characteristics of said semiconductor device are inspected.
Claim 12
Independent Claim
271 words
A method of inspecting a semiconductor device with the use of an inspection apparatus, in which said semiconductor device comprises (i) an MIM capacitor having a first metallic layer formed on a semiconductor substrate, an insulator layer formed on said first metallic layer and a second metallic layer formed on said insulator layer, and (ii) an insulator protective layer formed on said MIM capacitor, said inspection apparatus comprises: an insulator substrate made of a material having a high dielectric constant; a signal transmission passage made of an electrically conductive material and formed on the top surface of said insulator substrate; a grounding electrode made of an electrically conductive material and formed at least on the top surfaces of those portions of said insulator substrate which are opposite to each other with another portion of said insulator substrate where said signal transmission passage is disposed held therebetween; a microstrip line formed by said signal transmission passage and those portions of said grounding electrode which are opposite to each other with said signal transmission passage held therebetween; and a detecting electrode made of an electrically conductive material and formed at the underside of said insulator substrate, said detecting electrode being electrically connected to said signal transmission passage through a through-hole formed in said insulator substrate, and with said detecting electrode of said inspection apparatus brought close to or contacted with said insulator protective layer of said semiconductor device, said detecting electrode of said inspection apparatus is adapted to receive a high frequency signal from said MIM capacitor of said semiconductor device, so that the high frequency characteristics of said semiconductor device are inspected.
Claim 13
Dependent Claim
100 words
An inspection method according to Claim 12, wherein the signal transmission passage of the inspection apparatus is divided into first, second and third partial transmission passages, and the microstrip line of said inspection apparatus has (i) a capacitor having one electrode electrically connected to said first partial transmission passage and the other electrode electrically connected to said second partial transmission passage, and (ii) a transistor of which each electrode is electrically connected, by wire bonding, to the grounding electrode, said second partial transmission passage or said third partial transmission passage, said transistor being adapted to amplify a high frequency signal.
Claim 14
Dependent Claim
57 words
An inspection method according to Claim 13, wherein each of the one and the other electrodes of the capacitor of the microstrip line comprises a metallic layer, and said capacitor is an MIM capacitor comprising said metallic layers and an insulator layer made of a material having a high dielectric constant and interposed between said metallic layers.
Claim 15
Dependent Claim
101 words
An inspection method according to Claim 12, wherein the signal transmission passage of the inspection apparatus is divided into first, second and third partial transmission passages, and the microstrip line of said inspection apparatus has (i) a capacitor having one electrode electrically connected to said first partial transmission passage and the other electrode electrically connected to said second partial transmission passage, and (ii) a transistor of which each electrode is electrically connected, by flip chip bonding, to the grounding electrode, said second partial transmission passage or said third partial transmission passage, said transistor being adapted to amplify a high frequency signal.
Claim 16
Dependent Claim
57 words
An inspection method according to Claim 15, wherein each of the one and the other electrodes of the capacitor of the microstrip line comprises a metallic layer, and said capacitor is an MIM capacitor comprising said metallic layers and an insulator layer made of a material having a high dielectric constant and interposed between said metallic layers.
Claim 17
Independent Claim
265 words
A method of inspecting a semiconductor device with the use of an inspection apparatus, in which said semiconductor device comprises (i) an MIM capacitor having a first metallic layer formed on a semiconductor substrate, an insulator layer formed on said first metallic layer and a second metallic layer formed on said insulator layer, and (ii) an insulator protective layer formed on said MIM capacitor, said inspection apparatus comprises: an insulator substrate made of a material having a high dielectric constant; a signal transmission passage made of an electrically conductive material and formed inside of said insulator substrate; a detecting electrode made of an electrically conductive material and formed at the underside of said insulator substrate, said detecting electrode being electrically connected to said signal transmission passage through an introduction hole which is formed in said insulator substrate and which extends to the inside from said underside thereof; a first grounding electrode made of an electrically conductive material and formed on the entire top surface of said insulator substrate; and a second grounding electrode made of an electrically conductive material and formed at the entire underside of said insulator substrate except for its portion where said detecting electrode is disposed and for its portion adjacent to said first-mentioned portion, with said detecting electrode of said inspection apparatus brought close to or contacted with said insulator protective layer of said semiconductor device, said detecting electrode of said inspection apparatus is adapted to supply a high frequency signal to said MIM capacitor of said semiconductor device, so that the high frequency characteristics of said semiconductor device are inspected.
Claim 18
Independent Claim
265 words
A method of inspecting a semiconductor device with the use of an inspection apparatus, in which said semiconductor device comprises (i) an MIM capacitor having a first metallic layer formed on a semiconductor substrate, an insulator layer formed on said first metallic layer and a second metallic layer formed on said insulator layer, and (ii) an insulator protective layer formed on said MIM capacitor, said inspection apparatus comprises: an insulator substrate made of a material having a high dielectric constant; a signal transmission passage made of an electrically conductive material and formed inside of said insulator substrate; a detecting electrode made of an electrically conductive material and formed at the underside of said insulator substrate, said detecting electrode being electrically connected to said signal transmission passage through an introduction hole which is formed in said insulator substrate and which extends to the inside from said underside thereof; a first grounding electrode made of an electrically conductive material and formed on the entire top surface of said insulator substrate; and a second grounding electrode made of an electrically conductive material and formed at the entire underside of said insulator substrate except for its portion where said detecting electrode is disposed and for its portion adjacent to said first-mentioned portion, with said detecting electrode of said inspection apparatus brought close to or contacted with said insulator protective layer of said semiconductor device, said detecting electrode of said inspection apparatus is adapted to receive a high frequency signal from said MIM capacitor of said semiconductor device, so that the high frequency characteristics of said semiconductor device are inspected.
Claim 19
Dependent Claim
102 words
An inspection method according to Claim 18, wherein the signal transmission passage of the inspection apparatus is divided into first, second and third partial transmission passages, and said inspection apparatus further has (i) a capacitor having one electrode electrically connected to said first partial transmission passage and the other electrode electrically connected to said second partial transmission passage, and (ii) a transistor of which each electrode is electrically connected, by wire bonding, to the first grounding electrode, the second grounding electrode, said second partial transmission passage or said third partial transmission passage, said transistor being adapted to amplify a high frequency signal.
Claim 20
Dependent Claim
57 words
An inspection method according to Claim 19, wherein each of the one and the other electrodes of the capacitor of the inspection apparatus comprises a metallic layer, and said capacitor is an MIM capacitor comprising said metallic layers and an insulator layer made of a material having a high dielectric constant and interposed between said metallic layers.
Claim 21
Dependent Claim
103 words
An inspection method according to Claim 18, wherein the signal transmission passage of the inspection apparatus is divided into first, second and third partial transmission passages, and said inspection apparatus further has (i) a capacitor having one electrode electrically connected to said first partial transmission passage and the other electrode electrically connected to said second partial transmission passage, and (ii) a transistor of which each electrode is electrically connected, by flip chip bonding, to the first grounding electrode, the second grounding electrode, said second partial transmission passage or said third partial transmission passage, said transistor being adapted to amplify a high frequency signal.
Claim 22
Dependent Claim
57 words
An inspection method according to Claim 21, wherein each of the one and the other electrodes of the capacitor of the inspection apparatus comprises a metallic layer, and said capacitor is an MIM capacitor comprising said metallic layers and an insulator layer made of a material having a high dielectric constant and interposed between said metallic layers.
Claim 23
Independent Claim
247 words
A method of inspecting a semiconductor device with the use of an inspection apparatus, in which said semiconductor device comprises (i) a wiring layer formed on a semiconductor substrate and (ii) an insulator protective layer formed on said wiring layer, said inspection apparatus comprises: an insulator substrate made of a material having a high dielectric constant; a signal transmission passage made of an electrically conductive material and formed on the top surface of said insulator substrate; a grounding electrode made of an electrically conductive material and formed at least on the top surfaces of those portions of said insulator substrate which are opposite to each other with another portion of said insulator substrate where said signal transmission passage is disposed held therebetween; a microstrip line formed by said signal transmission passage and those portions of said grounding electrode which are opposite to each other with said signal transmission passage held therebetween; and a detecting electrode made of an electrically conductive material and formed at the underside of said insulator substrate, said detecting electrode being electrically connected to said signal transmission passage through a through-hole formed in said insulator substrate, and with said detecting electrode of said inspection apparatus brought close to or contacted with said insulator protective layer of said semiconductor device, said detecting electrode of said inspection apparatus is adapted to supply a high frequency signal to said wiring layer of said semiconductor device, so that the high frequency characteristics of said semiconductor device are inspected.
Claim 24
Independent Claim
247 words
A method of inspecting a semiconductor device with the use of an inspection apparatus, in which said semiconductor device comprises (i) a wiring layer formed on a semiconductor substrate and (ii) an insulator protective layer formed on said wiring layer, said inspection apparatus comprises: an insulator substrate made of a material having a high dielectric constant; a signal transmission passage made of an electrically conductive material and formed on the top surface of said insulator substrate; a grounding electrode made of an electrically conductive material and formed at least on the top surfaces of those portions of said insulator substrate which are opposite to each other with another portion of said insulator substrate where said signal transmission passage is disposed held therebetween; a microstrip line formed by said signal transmission passage and those portions of said grounding electrode which are opposite to each other with said signal transmission passage held therebetween; and a detecting electrode made of an electrically conductive material and formed at the underside of said insulator substrate, said detecting electrode being electrically connected to said signal transmission passage through a through-hole formed in said insulator substrate, and with said detecting electrode of said inspection apparatus brought close to or contacted with said insulator protective layer of said semiconductor device, said detecting electrode of said inspection apparatus is adapted to receive a high frequency signal from said wiring layer of said semiconductor device, so that the high frequency characteristics of said semiconductor device are inspected.
Claim 25
Dependent Claim
100 words
An inspection method according to Claim 24, wherein the signal transmission passage of the inspection apparatus is divided into first, second and third partial transmission passages, and the microstrip line of said inspection apparatus has (i) a capacitor having one electrode electrically connected to said first partial transmission passage and the other electrode electrically connected to said second partial transmission passage, and (ii) a transistor of which each electrode is electrically connected, by wire bonding, to the grounding electrode, said second partial transmission passage or said third partial transmission passage, said transistor being adapted to amplify a high frequency signal.
Claim 26
Dependent Claim
57 words
An inspection method according to Claim 25, wherein each of the one and the other electrodes of the capacitor of the microstrip line comprises a metallic layer, and said capacitor is an MIM capacitor comprising said metallic layers and an insulator layer made of a material having a high dielectric constant and interposed between said metallic layers.
Claim 27
Dependent Claim
101 words
An inspection method according to Claim 24, wherein the signal transmission passage of the inspection apparatus is divided into first, second and third partial transmission passages, and the microstrip line of said inspection apparatus has (i) a capacitor having one electrode electrically connected to said first partial transmission passage and the other electrode electrically connected to said second partial transmission passage, and (ii) a transistor of which each electrode is electrically connected, by flip chip bonding, to the grounding electrode, said second partial transmission passage or said third partial transmission passage, said transistor being adapted to amplify a high frequency signal.
Claim 28
Dependent Claim
57 words
An inspection method according to Claim 27, wherein each of the one and the other electrodes of the capacitor of the microstrip line comprises a metallic layer, and said capacitor is an MIM capacitor comprising said metallic layers and an insulator layer made of a material having a high dielectric constant and interposed between said metallic layers.
Claim 29
Independent Claim
241 words
A method of inspecting a semiconductor device with the use of an inspection apparatus, in which said semiconductor device comprises (i) a wiring layer formed on a semiconductor substrate and (ii) an insulator protective layer formed on said wiring layer, said inspection apparatus comprises: an insulator substrate made of a material having a high dielectric constant; a signal transmission passage made of an electrically conductive material and formed inside of said insulator substrate; a detecting electrode made of an electrically conductive material and formed at the underside of said insulator substrate, said detecting electrode being electrically connected to said signal transmission passage through an introduction hole which is formed in said insulator substrate and which extends to the inside from said underside thereof; a first grounding electrode made of an electrically conductive material and formed on the entire top surface of said insulator substrate; and a second grounding electrode made of an electrically conductive material and formed at the entire underside of said insulator substrate except for its portion where said detecting electrode is disposed and for its portion adjacent to said first-mentioned portion, with said detecting electrode of said inspection apparatus brought close to or contacted with said insulator protective layer of said semiconductor device, said detecting electrode of said inspection apparatus is adapted to supply a high frequency signal to said wiring layer of said semiconductor device, so that the high frequency characteristics of said semiconductor device are inspected.
Claim 30
Independent Claim
241 words
A method of inspecting a semiconductor device with the use of an inspection apparatus, in which said semiconductor device comprises (i) a wiring layer formed on a semiconductor substrate and (ii) an insulator protective layer formed on said wiring layer, said inspection apparatus comprises: an insulator substrate made of a material having a high dielectric constant; a signal transmission passage made of an electrically conductive material and formed inside of said insulator substrate; a detecting electrode made of an electrically conductive material and formed at the underside of said insulator substrate, said detecting electrode being electrically connected to said signal transmission passage through an introduction hole which is formed in said insulator substrate and which extends to the inside from said underside thereof; a first grounding electrode made of an electrically conductive material and formed on the entire top surface of said insulator substrate; and a second grounding electrode made of an electrically conductive material and formed at the entire underside of said insulator substrate except for its portion where said detecting electrode is disposed and for its portion adjacent to said first-mentioned portion, with said detecting electrode of said inspection apparatus brought close to or contacted with said insulator protective layer of said semiconductor device, said detecting electrode of said inspection apparatus is adapted to receive a high frequency signal from said wiring layer of said semiconductor device, so that the high frequency characteristics of said semiconductor device are inspected.
Claim 31
Dependent Claim
102 words
An inspection method according to Claim 30, wherein the signal transmission passage of the inspection apparatus is divided into first, second and third partial transmission passages, and said inspection apparatus further has (i) a capacitor having one electrode electrically connected to said first partial transmission passage and the other electrode electrically connected to said second partial transmission passage, and (ii) a transistor of which each electrode is electrically connected, by wire bonding, to the first grounding electrode, the second grounding electrode, said second partial transmission passage or said third partial transmission passage, said transistor being adapted to amplify a high frequency signal.
Claim 32
Dependent Claim
57 words
An inspection method according to Claim 31, wherein each of the one and the other electrodes of the capacitor of the inspection apparatus comprises a metallic layer, and said capacitor is an MIM capacitor comprising said metallic layers and an insulator layer made of a material having a high dielectric constant and interposed between said metallic layers.
Claim 33
Dependent Claim
103 words
An inspection method according to Claim 30, wherein the signal transmission passage of the inspection apparatus is divided into first, second and third partial transmission passages, and said inspection apparatus further has (i) a capacitor having one electrode electrically connected to said first partial transmission passage and the other electrode electrically connected to said second partial transmission passage, and (ii) a transistor of which each electrode is electrically connected, by flip chip bonding, to the first grounding electrode, the second grounding electrode, said second partial transmission passage or said third partial transmission passage, said transistor being adapted to amplify a high frequency signal.
Claim 34
Dependent Claim
57 words
An inspection method according to Claim 33, wherein each of the one and the other electrodes of the capacitor of the inspection apparatus comprises a metallic layer, and said capacitor is an MIM capacitor comprising said metallic layers and an insulator layer made of a material having a high dielectric constant and interposed between said metallic layers.
Claim 35
Dependent Claim
63 words
A semiconductor device comprising: an MIM capacitor having a first metallic layer formed on a semiconductor substrate, an insulator layer formed on said first metallic layer and a second metallic layer formed on said insulator layer; an insulator protective layer formed on said MIM capacitor; and an electrical conductor layer made of an electrically conductive material and formed on said insulator protective layer.
Claim 36
Dependent Claim
39 words
A semiconductor device comprising: a wiring layer formed on a semiconductor substrate; an insulator protective layer formed on said wiring layer; and an electrical conductor layer made of an electrically conductive material and formed on said insulator protective layer.
Claim 37
Independent Claim
289 words
A method of inspecting a semiconductor device with the use of an inspection apparatus, in which said semiconductor device comprises: (i) an MIM capacitor having a first metallic layer formed on a semiconductor substrate, an insulator layer formed on said first metallic layer and a second metallic layer formed on said insulator layer; (ii) an insulator protective layer formed on said MIM capacitor; and (iii) an electrical conductor layer made of an electrically conductive material and formed on said insulator protective layer, said inspection apparatus comprises: an insulator substrate made of a material having a high dielectric constant; a signal transmission passage made of an electrically conductive material and formed on the top surface of said insulator substrate; a grounding electrode made of an electrically conductive material and formed at least on the top surfaces of those portions of said insulator substrate which are opposite to each other with another portion of said insulator substrate where said signal transmission passage is disposed held therebetween; a microstrip line formed by said signal transmission passage and those portions of said grounding electrode which are opposite to each other with said signal transmission passage held therebetween; and a detecting electrode made of an electrically conductive material and formed at the underside of said insulator substrate, said detecting electrode being electrically connected to said signal transmission passage through a through-hole formed in said insulator substrate, and with said detecting electrode of said inspection apparatus brought close to or contacted with said electrical conductor layer of said semiconductor device, said detecting electrode of said inspection apparatus is adapted to supply a high frequency signal to said MIM capacitor of said semiconductor device, so that the high frequency characteristics of said semiconductor device are inspected.
Claim 38
Independent Claim
286 words
A method of inspecting a semiconductor device with the use of an inspection apparatus, in which said semiconductor device comprises: an MIM capacitor having a first metallic layer formed on a semiconductor substrate, an insulator layer formed on said first metallic layer and a second metallic layer formed on said insulator layer; an insulator protective layer formed on said MIM capacitor; and an electrical conductor layer made of an electrically conductive material and formed on said insulator protective layer, said inspection apparatus comprises: an insulator substrate made of a material having a high dielectric constant; a signal transmission passage made of an electrically conductive material and formed on the top surface of said insulator substrate; a grounding electrode made of an electrically conductive material and formed at least on the top surfaces of those portions of said insulator substrate which are opposite to each other with another portion of said insulator substrate where said signal transmission passage is disposed held therebetween; a microstrip line formed by said signal transmission passage and those portions of said grounding electrode which are opposite to each other with said signal transmission passage held therebetween; and a detecting electrode made of an electrically conductive material and formed at the underside of said insulator substrate, said detecting electrode being electrically connected to said signal transmission passage through a through-hole formed in said insulator substrate, and with said detecting electrode of said inspection apparatus brought close to or contacted with said electrical conductor layer of said semiconductor device, said detecting electrode of said inspection apparatus is adapted to receive a high frequency signal from said MIM capacitor of said semiconductor device, so that the high frequency characteristics of said semiconductor device are inspected.
Claim 39
Dependent Claim
100 words
An inspection method according to Claim 38, wherein the signal transmission passage of the inspection apparatus is divided into first, second and third partial transmission passages, and the microstrip line of said inspection apparatus has (i) a capacitor having one electrode electrically connected to said first partial transmission passage and the other electrode electrically connected to said second partial transmission passage, and (ii) a transistor of which each electrode is electrically connected, by wire bonding, to the grounding electrode, said second partial transmission passage or said third partial transmission passage, said transistor being adapted to amplify a high frequency signal.
Claim 40
Dependent Claim
57 words
An inspection method according to Claim 39, wherein each of the one and the other electrodes of the capacitor of the microstrip line comprises a metallic layer, and said capacitor is an MIM capacitor comprising said metallic layers and an insulator layer made of a material having a high dielectric constant and interposed between said metallic layers.
Claim 41
Dependent Claim
101 words
An inspection method according to Claim 38, wherein the signal transmission passage of the inspection apparatus is divided into first, second and third partial transmission passages, and the microstrip line of said inspection apparatus has (i) a capacitor having one electrode electrically connected to said first partial transmission passage and the other electrode electrically connected to said second partial transmission passage, and (ii) a transistor of which each electrode is electrically connected, by flip chip bonding, to the grounding electrode, said second partial transmission passage or said third partial transmission passage, said transistor being adapted to amplify a high frequency signal.
Claim 42
Dependent Claim
57 words
An inspection method according to Claim 41, wherein each of the one and the other electrodes of the capacitor of the microstrip line comprises a metallic layer, and said capacitor is an MIM capacitor comprising said metallic layers and an insulator layer made of a material having a high dielectric constant and interposed between said metallic layers.
Claim 43
Independent Claim
283 words
A method of inspecting a semiconductor device with the use of an inspection apparatus, in which said semiconductor device comprises: (i) an MIM capacitor having a first metallic layer formed on a semiconductor substrate, an insulator layer formed on said first metallic layer and a second metallic layer formed on said insulator layer; (ii) an insulator protective layer formed on said MIM capacitor; and (iii) an electrical conductor layer made of an electrically conductive material and formed on said insulator protective layer, said inspection apparatus comprises: an insulator substrate made of a material having a high dielectric constant; a signal transmission passage made of an electrically conductive material and formed inside of said insulator substrate; a detecting electrode made of an electrically conductive material and formed at the underside of said insulator substrate, said detecting electrode being electrically connected to said signal transmission passage through an introduction hole which is formed in said insulator substrate and which extends to the inside from said underside thereof; a first grounding electrode made of an electrically conductive material and formed on the entire top surface of said insulator substrate; and a second grounding electrode made of an electrically conductive material and formed at the entire underside of said insulator substrate except for its portion where said detecting electrode is disposed and for its portion adjacent to said first-mentioned portion, with said detecting electrode of said inspection apparatus brought close to or contacted with said electrical conductor layer of said semiconductor device, said detecting electrode of said inspection apparatus is adapted to supply a high frequency signal to said MIM capacitor of said semiconductor device, so that the high frequency characteristics of said semiconductor device are inspected.
Claim 44
Independent Claim
283 words
A method of inspecting a semiconductor device with the use of an inspection apparatus, in which said semiconductor device comprises: (i) an MIM capacitor having a first metallic layer formed on a semiconductor substrate, an insulator layer formed on said first metallic layer and a second metallic layer formed on said insulator layer; (ii) an insulator protective layer formed on said MIM capacitor; and (iii) an electrical conductor layer made of an electrically conductive material and formed on said insulator protective layer, said inspection apparatus comprises: an insulator substrate made of a material having a high dielectric constant; a signal transmission passage made of an electrically conductive material and formed inside of said insulator substrate; a detecting electrode made of an electrically conductive material and formed at the underside of said insulator substrate, said detecting electrode being electrically connected to said signal transmission passage through an introduction hole which is formed in said insulator substrate and which extends to the inside from said underside thereof; a first grounding electrode made of an electrically conductive material and formed on the entire top surface of said insulator substrate; and a second grounding electrode made of an electrically conductive material and formed at the entire underside of said insulator substrate except for its portion where said detecting electrode is disposed and for its portion adjacent to said first-mentioned portion, with said detecting electrode of said inspection apparatus brought close to or contacted with said electrical conductor layer of said semiconductor device, said detecting electrode of said inspection apparatus is adapted to receive a high frequency signal from said MIM capacitor of said semiconductor device, so that the high frequency characteristics of said semiconductor device are inspected.
Claim 45
Dependent Claim
102 words
An inspection method according to Claim 44, wherein the signal transmission passage of the inspection apparatus is divided into first, second and third partial transmission passages, and said inspection apparatus further has (i) a capacitor having one electrode electrically connected to said first partial transmission passage and the other electrode electrically connected to said second partial transmission passage, and (ii) a transistor of which each electrode is electrically connected, by wire bonding, to the first grounding electrode, the second grounding electrode, said second partial transmission passage or said third partial transmission passage, said transistor being adapted to amplify a high frequency signal.
Claim 46
Dependent Claim
57 words
An inspection method according to Claim 45, wherein each of the one and the other electrodes of the capacitor of the inspection apparatus comprises a metallic layer, and said capacitor is an MIM capacitor comprising said metallic layers and an insulator layer made of a material having a high dielectric constant and interposed between said metallic layers.
Claim 47
Dependent Claim
103 words
An inspection method according to Claim 44, wherein the signal transmission passage of the inspection apparatus is divided into first, second and third partial transmission passages, and said inspection apparatus further has (i) a capacitor having one electrode electrically connected to said first partial transmission passage and the other electrode electrically connected to said second partial transmission passage, and (ii) a transistor of which each electrode is electrically connected, by flip chip bonding, to the first grounding electrode, the second grounding electrode, said second partial transmission passage or said third partial transmission passage, said transistor being adapted to amplify a high frequency signal.
Claim 48
Dependent Claim
57 words
An inspection method according to Claim 47, wherein each of the one and the other electrodes of the capacitor of the inspection apparatus comprises a metallic layer, and said capacitor is an MIM capacitor comprising said metallic layers and an insulator layer made of a material having a high dielectric constant and interposed between said metallic layers.
Claim 49
Independent Claim
271 words
A method of inspecting a semiconductor device with the use of an inspection apparatus, in which said semiconductor device comprises: a wiring layer formed on a semiconductor substrate; an insulator protective layer formed on said wiring layer; and an electrical conductor layer made of an electrically conductive material and formed on said insulator protective layer, said inspection apparatus comprises: an insulator substrate made of a material having a high dielectric constant; a signal transmission passage made of an electrically conductive material and formed on the top surface of said insulator substrate; a grounding electrode made of an electrically conductive material and formed at least on the top surfaces of those portions of said insulator substrate which are opposite to each other with another portion of said insulator substrate where said signal transmission passage is dispose held therebetween; a microstrip line formed by said signal transmission passage and those portions of said grounding electrode which are opposite to each other with another portion of said insulator substrate where said signal transmission passage is dispose held therebetween; and a detecting electrode made of an electrically conductive material and formed at the underside of said insulator substrate, said detecting electrode being electrically connected to said signal transmission passage through a through-hole formed in said insulator substrate, and with said detecting electrode of said inspection apparatus brought close to or contacted with said electrical conductor layer of said semiconductor device, said detecting electrode of said inspection apparatus is adapted to supply a high frequency signal to said wiring layer of said semiconductor device, so that the high frequency characteristics of said semiconductor device are inspected.
Claim 50
Independent Claim
262 words
A method of inspecting a semiconductor device with the use of an inspection apparatus, in which said semiconductor device comprises: a wiring layer formed on a semiconductor substrate; an insulator protective layer formed on said wiring layer; and an electrical conductor layer made of an electrically conductive material and formed on said insulator protective layer, said inspection apparatus comprises: an insulator substrate made of a material having a high dielectric constant; a signal transmission passage made of an electrically conductive material and formed on the top surface of said insulator substrate; a grounding electrode made of an electrically conductive material and formed at least on the top surfaces of those portions of said insulator substrate which are opposite to each other with another portion of said insulator substrate where said signal transmission passage is disposed held therebetween; a microstrip line formed by said signal transmission passage and those portions of said grounding electrode which are opposite to each other with said signal transmission passage held therebetween; and a detecting electrode made of an electrically conductive material and formed at the underside of said insulator substrate, said detecting electrode being electrically connected to said signal transmission passage through a through-hole formed in said insulator substrate, and with said detecting electrode of said inspection apparatus brought close to or contacted with said electrical conductor layer of said semiconductor device, said detecting electrode of said inspection apparatus is adapted to receive a high frequency signal from said wiring layer of said semiconductor device, so that the high frequency characteristics of said semiconductor device are inspected.
Claim 51
Dependent Claim
100 words
An inspection method according to Claim 50, wherein the signal transmission passage of the inspection apparatus is divided into first, second and third partial transmission passages, and the microstrip line of said inspection apparatus has (i) a capacitor having one electrode electrically connected to said first partial transmission passage and the other electrode electrically connected to said second partial transmission passage, and (ii) a transistor of which each electrode is electrically connected, by wire bonding, to the grounding electrode, said second partial transmission passage or said third partial transmission passage, said transistor being adapted to amplify a high frequency signal.
Claim 52
Dependent Claim
57 words
An inspection method according to Claim 51, wherein each of the one and the other electrodes of the capacitor of the microstrip line comprises a metallic layer, and said capacitor is an MIM capacitor comprising said metallic layers and an insulator layer made of a material having a high dielectric constant and interposed between said metallic layers.
Claim 53
Dependent Claim
101 words
An inspection method according to Claim 50, wherein the signal transmission passage of the inspection apparatus is divided into first, second and third partial transmission passages, and the microstrip line of said inspection apparatus has (i) a capacitor having one electrode electrically connected to said first partial transmission passage and the other electrode electrically connected to said second partial transmission passage, and (ii) a transistor of which each electrode is electrically connected, by flip chip bonding, to the grounding electrode, said second partial transmission passage or said third partial transmission passage, said transistor being adapted to amplify a high frequency signal.
Claim 54
Dependent Claim
57 words
An inspection method according to Claim 53, wherein each of the one and the other electrodes of the capacitor of the microstrip line comprises a metallic layer, and said capacitor is an MIM capacitor comprising said metallic layers and an insulator layer made of a material having a high dielectric constant and interposed between said metallic layers.
Claim 55
Independent Claim
256 words
A method of inspecting a semiconductor device with the use of an inspection apparatus, in which said semiconductor device comprises: a wiring layer formed on a semiconductor substrate; an insulator protective layer formed on said wiring layer; and an electrical conductor layer made of an electrically conductive material and formed on said insulator protective layer, said inspection apparatus comprises: an insulator substrate made of a material having a high dielectric constant; a signal transmission passage made of an electrically conductive material and formed inside of said insulator substrate; a detecting electrode made of an electrically conductive material and formed at the underside of said insulator substrate, said detecting electrode being electrically connected to said signal transmission passage through an introduction hole which is formed in said insulator substrate and which extends to the inside from said underside thereof; a first grounding electrode made of an electrically conductive material and formed on the entire top surface of said insulator substrate; and a second grounding electrode made of an electrically conductive material and formed at the entire underside of said insulator substrate except for its portion where said detecting electrode is disposed and for its portion adjacent to said first-mentioned portion, with said detecting electrode of said inspection apparatus brought close to or contacted with said electrical conductor layer of said semiconductor device, said detecting electrode of said inspection apparatus is adapted to supply a high frequency signal to said wiring layer of said semiconductor device, so that the high frequency characteristics of said semiconductor device are inspected.
Claim 56
Independent Claim
256 words
A method of inspecting a semiconductor device with the use of an inspection apparatus, in which said semiconductor device comprises: a wiring layer formed on a semiconductor substrate; an insulator protective layer formed on said wiring layer; and an electrical conductor layer made of an electrically conductive material and formed on said insulator protective layer, said inspection apparatus comprises: an insulator substrate made of a material having a high dielectric constant; a signal transmission passage made of an electrically conductive material and formed inside of said insulator substrate; a detecting electrode made of an electrically conductive material and formed at the underside of said insulator substrate, said detecting electrode being electrically connected to said signal transmission passage through an introduction hole which is formed in said insulator substrate and which extends to the inside from said underside thereof; a first grounding electrode made of an electrically conductive material and formed on the entire top surface of said insulator substrate; and a second grounding electrode made of an electrically conductive material and formed at the entire underside of said insulator substrate except for its portion where said detecting electrode is disposed and for its portion adjacent to said first-mentioned portion, with said detecting electrode of said inspection apparatus brought close to or contacted with said electrical conductor layer of said semiconductor device, said detecting electrode of said inspection apparatus is adapted to receive a high frequency signal from said wiring layer of said semiconductor device, so that the high frequency characteristics of said semiconductor device are inspected.
Claim 57
Dependent Claim
102 words
An inspection method according to Claim 56, wherein the signal transmission passage of the inspection apparatus is divided into first, second and third partial transmission passages, and said inspection apparatus further has (i) a capacitor having one electrode electrically connected to said first partial transmission passage and the other electrode electrically connected to said second partial transmission passage, and (ii) a transistor of which each electrode is electrically connected, by wire bonding, to the first grounding electrode, the second grounding electrode, said second partial transmission passage or said third partial transmission passage, said transistor being adapted to amplify a high frequency signal.
Claim 58
Dependent Claim
57 words
An inspection method according to Claim 57, wherein each of the one and the other electrodes of the capacitor of the inspection apparatus comprises a metallic layer, and said capacitor is an MIM capacitor comprising said metallic layers and an insulator layer made of a material having a high dielectric constant and interposed between said metallic layers.
Claim 59
Dependent Claim
103 words
An inspection method according to Claim 56, wherein the signal transmission passage of the inspection apparatus is divided into first, second and third partial transmission passages, and said inspection apparatus further has (i) a capacitor having one electrode electrically connected to said first partial transmission passage and the other electrode electrically connected to said second partial transmission passage, and (ii) a transistor of which each electrode is electrically connected, by flip chip bonding, to the first grounding electrode, the second grounding electrode, said second partial transmission passage or said third partial transmission passage, said transistor being adapted to amplify a high frequency signal.
Claim 60
Dependent Claim
57 words
An inspection method according to Claim 59, wherein each of the one and the other electrodes of the capacitor of the inspection apparatus comprises a metallic layer, and said capacitor is an MIM capacitor comprising said metallic layers and an insulator layer made of a material having a high dielectric constant and interposed between said metallic layers.
References Cited (Backward Citations)
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