EP0615342A2
Expired / Lapsed
EP
⏱️ 0.0 years remaining
Semiconductor device
Assignee: Fuji Electric Co Ltd
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Filing: 1993-09-16
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Granted: —
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Expires: 2013-09-16
Abstract
Abstract A semiconductor device includes a main insulated gate type switching element having a gate electrode and controllable by a gate voltage applied to the gate electrode, a current detecting insulated gate type switching element connected in parallel to the main insulated gate type switching element, a detecting resistor for detecting a current flowing in the current detecting insulated gate type switching element, a gate controlling element capable of controlling the gate voltage by a drop voltage in the detecting resistor, and a gate control relieving element for relieving a varying speed of the gate voltage varied based on an operation of the gate controlling element. <IMAGE>
Inventors
- 👤 Tadashi C/O Fuji Electric Co. Ltd. Miyasaka
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-07 15:53
CPC Classifications
H; H03; H03K; H03K17/00; H03K17/16; H03K17/168; H03K17/08; H03K17/082; H03K17/0822; H03K17/0828; H03K17/161; H03K17/162; H03K17/163
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
109 words
A semiconductor device, comprising: a main insulated gate type switching element having a gate electrode and controllable by a gate voltage applied to said gate electrode; a current detecting insulated gate type switching element connected in parallel to said main insulated gate type switching element; a detecting resistor means for detecting a current flowing in said current detecting insulated gate type switching element; a gate controlling element capable of controlling said gate voltage by means of a drop voltage in said detecting resistor means; and a gate control relieving means for relieving a varying speed of said gate voltage varied based on an operation of said gate controlling element.
Claim 2
Dependent Claim
26 words
A semiconductor device as set forth in claim 1, wherein said gate control relieving means is a current limit means inserted just before said gate electrode.
Claim 3
Dependent Claim
49 words
A semiconductor device as set forth in claim 1, wherein said gate controlling element is an insulated gate type control element having an insulated gate, and said gate control relieving means is a current limit means inserted just before said gate electrode of said insulated gate type control element.
Claim 4
Dependent Claim
49 words
A semiconductor device as set forth in claim 1, wherein said gate controlling element is an insulated gate type control element having an insulated gate, and said gate control relieving means is a current absorb means inserted just before said gate electrode of said insulated gate type control element.
Claim 5
Dependent Claim
34 words
A semiconductor device as set forth in claim 1, 2, 3 or 4, further including a current limit means inserted just before a gate electrode of said current detecting insulated gate type switching element.
Claim 6
Dependent Claim
34 words
A semiconductor device as set forth in claim 1, 2, 3 or 4, further including a current absorb means inserted just before a gate electrode of said current detecting insulated gate type switching element.
Claim 7
Dependent Claim
38 words
A semiconductor device as set forth in claim 1, 2, 3 or 4, wherein said main insulated gate type switching element and said current detecting insulated gate type switching element are an IGBT having a current sensing terminal.
Claim 8
Dependent Claim
112 words
A semiconductor device, comprising: a main insulated gate type switching element having a gate electrode and controllable by a gate voltage applied to said gate electrode; a current detecting insulated gate type switching element connected in parallel to said main insulated gate type switching element; a detecting resistor means for detecting a current flowing in said current detecting insulated gate type switching element; and a gate controlling element capable of controlling said gate voltage by means of a drop voltage in said detecting resistor means, wherein a threshold voltage of said gate controlling element is set equal to or less than a saturation voltage of said main insulted gate type switching element.
Claim 9
Dependent Claim
157 words
A semiconductor device, comprising: a main insulated gate type switching element having a gate electrode and controllable by a gate voltage applied to said gate electrode; a current detecting insulated gate type switching element connected in parallel to said main insulated gate type switching element; a detecting resistor means for detecting a current flowing in said current detecting insulated gate type switching element; a gate controlling element capable of controlling said gate voltage by means of a drop voltage in said detecting resistor means; and a commonly used and externally extracting terminal for connecting a terminal of said main insulated gate type switching element with a terminal of said detecting resistor means, wherein said terminal of said main insulated gate type switching element is connected with said externally extracting terminal by means of a first wiring and said terminal of said detecting resistor means is connected with said externally extracting terminal by means of a second wiring.
References Cited (Backward Citations)
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