Method of manufacturing a silicon-on-insulator semiconductor device

Abstract

Abstract The present invention discloses a method for making a semiconductor device of silicon-on-insulator structure comprises the steps of: forming a pad oxide on a wafer including a lower silicon substrate, a buried oxide layer and an upper silicon layer, and forming an oxynitride region on a predetermined portion of the buried oxide layer; forming an active silicon layer to intersect the oxynitride region, and forming a cavity by wet-etching the exposed oxynitride region; forming a gate insulating layer on the surface of the exposed active silicon layer; forming a polysilicon to fill the cavity surrounding said active silicon layer and removing a predetermined portion of the doped polysilicon to form a gate electrode; and forming source and drain regions on the active silicon layer separated by the gate electrode.

Inventors

• 👤 Tae Pok Rhee

Bibliographic Details