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EP0609053A2 Expired / Lapsed EP ⏱️ 0.0 years remaining

Voltage controlled integrated circuit for biasing an RF device

Assignee: STMicroelectronics lnc USA
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Filing: 1994-01-25
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Granted: —
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Expires: 2014-01-25
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Abstract

Abstract The present invention is directed to a voltage controlled single-package integrated circuit device, capable of thermal compensation, for biasing a quasi-linear bipolar device. The bias circuit also provides a low impedance source to a RF device so that the bias point does not dynamically change with the RF signal, thus improving linearity. Changes in the base-emitter voltage level of the RF device are monitored by a reference diode to provide automatic temperature compensation. The reference diode is in close thermal proximity to the RF device, allowing for accurate thermal tracking. The base-emitter voltage may be electronically adjusted by means of a control voltage input, such being suitable for hook-up to a computer system having a digital to analog convertor thereby allowing for fine voltage adjustments. The control voltage may also be used to adjust the class of operation of the RF device or provide external temperature control.

Inventors

  • 👤 Ronald P. Green

Bibliographic Details

Application Number —
Jurisdiction EP
Data Source google_patents
Last Synchronized 2026-11-08 11:23
CPC Classifications
G; G05; G05F; G05F3/00; G05F3/02; G05F3/08; G05F3/10; G05F3/16; G05F3/20; G05F3/22; G05F3/222; H; H03; H03F; H03F1/00; H03F1/02; H03F1/0205; H03F1/0261; H03F1/30; H03F1/302; H03F3/00; H03F3/189; H03F3/19; H03F2200/00; H03F2200/18; H03F2200/321

Claims Analysis

Total Claims: 12
Claim 1
Independent Claim 124 words
A single package integrated circuit device for biasing a quasi-linear bipolar device, comprising: a differential transistor pair, having a first transistor and a second transistor wherein the emitters of the first and second transistor are connected; a Darlington transistor pair, having a third and a fourth transistor, with the base of the third transistor connected to the collector of the second transistor and the base of the fourth transistor connected to the emitter of the third transistor; a reference device for monitoring the base-emitter voltage of the biased device; a voltage control input, for electronically adjusting the base-emitter voltage level of the biased device, connected to the base of the first transistor; and means for changing the class of operation of the biased device.
Claim 2
Dependent Claim 28 words
The biasing device of claim 1, wherein changing the class of operation of the biased device is accomplished by changing the voltage level of the voltage control input.
Claim 3
Dependent Claim 29 words
The biasing device of claim 2, wherein the voltage control input is suitable for control by a computer such that frequent and small changes in voltages may be realized.
Claim 4
Dependent Claim 18 words
The biasing device of claim 2, wherein class of operation refers to classes A, AB1, AB2, and B.
Claim 5
Dependent Claim 19 words
The biasing device of claim 1, wherein the reference device is in close thermal proximity to the biased device.
Claim 6
Dependent Claim 13 words
The biasing device of claim 5, wherein the reference device is a diode.
Claim 7
Dependent Claim 25 words
The biasing device of claim 1, wherein the emitters of the first transistor and the second transistor are decoupled from ground through a small resistance.
Claim 8
Dependent Claim 36 words
The biasing device of claim 7, wherein the small resistance is a resistor which behaves as a constant current source and the current through the resistor is shared between the first transistor and the second transistor.
Claim 9
Dependent Claim 26 words
The biasing device of claim 1, wherein the collector of the third transistor and the collector of the fourth transistor are connected to the power supply.
Claim 10
Dependent Claim 23 words
The biasing device of claim 1, wherein a resistive element supplies current from a power supply to the base of the third transistor.
Claim 11
Dependent Claim 13 words
The biasing device of claim 10, wherein the resistive element is a resistor.
Claim 12
Dependent Claim 15 words
The biasing device of claim 1, wherein the biased device is a bipolar RF transistor.

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