EP0606751A1
Expired / Lapsed
EP
⏱️ 0.0 years remaining
Method for depositing polysilicon films having improved uniformity and apparatus therefor
Assignee: Applied Materials Inc
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Filing: 1993-12-21
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Granted: —
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Expires: 2013-12-21
Abstract
Abstract The disclosure relates to a chemical vapor deposition chamber having a susceptor (136) and a susceptor support (148) to receive a substrate (135) on which a polysilicon film is to be deposited. The susceptor is encircled by a pre-heat ring (140) having an extension bracket (144) which mates with an extension bracket (142) of the susceptor to prevent reactant gases from reaching the surfaces of the susceptor support. The arrangement improves uniformity in the film deposited across the substrate.
Inventors
- 👤 Israel Beinglass
- 👤 Mahalingam Venkatesan
- 👤 Christian M. Gronet
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-09 03:32
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/22; C23C16/24; C23C16/44; C23C16/458; C23C16/4582; C23C16/4583; C23C16/4585; C23C16/455; C23C16/45519; C23C16/45587; C23C16/45591; C23C16/48; C23C16/481; C30; C30B; C30B25/00; C30B25/02; C30B25/14; H; H10; H10D; H10D64/00; H10D64/01; H10D64/011; H10D64/0111; H10D64/0113
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
42 words
A chemical vapor deposition chamber comprising a susceptor support for a substrate to be processed and a preheat ring surrounding said susceptor support, characterised in that a barrier is provided for preventing reaction gases from reaching the backside surface of said susceptor.
Claim 2
Dependent Claim
23 words
A chamber as claimed in Claim 1, characterised in that said susceptor has an extension between the support surface and the backside thereof.
Claim 3
Dependent Claim
31 words
A chamber as claimed in Claim 1 or Claim 2, characterised in that said preheat ring has an extension in its upper surface that overlaps and mates with said susceptor extension.
Claim 4
Independent Claim
46 words
A method of improving the uniformity of silicon films deposited by chemical vapor deposition onto a substrate supported by a susceptor in a vacuum chamber comprising providing a barrier preventing access of reaction gases and deposition of solid materials on the backside surface of said susceptor.
Claim 5
Dependent Claim
33 words
A method according to Claim 4, wherein said barrier comprises in combination a preheat ring that surrounds said substrate having an extension that mates with an extension of the surface of said susceptor.
Claim 6
Independent Claim
78 words
A method of improving the uniformity of deposited silicon films from one semiconductor substrate to another substrate comprising: a) mounting a semiconductor substrate on a susceptor support in a chemical vapor deposition vacuum chamber wherein said susceptor is surrounded by a barrier that prevents access of reaction gases and deposition of solid materials on the backside surface of said susceptor, b) depositing silicon on said substrate, and c) repeating steps a) and b) on another semiconductor substrate sequentially.
Claim 7
Dependent Claim
36 words
A method as claimed in Claim 6, characterised in that said barrier comprises in combination a preheat ring that surrounds said substrate having an extension that mates with an extension of the surface of said susceptor.
Claim 8
Dependent Claim
19 words
A method as claimed in Claim 6 or Claim 7, characterised in that said substrate is a silicon wafer.
Claim 9
Independent Claim
19 words
A method as claimed in Claims 6 to 8, characterised in that said reaction gases include hydrogen and silane.
References Cited (Backward Citations)
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