EP0604231A1
Expired / Lapsed
EP
⏱️ 0.0 years remaining
Semiconductor device applicable for liquid crystal display device, and process for its fabrication
Assignee: Canon Inc
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Filing: 1993-12-23
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Granted: —
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Expires: 2013-12-23
Abstract
Abstract A semiconductor device comprises a substrate (100) comprising a semiconductor monocrystalline substrate on one principal surface side of which a light-transmitting film is formed, the substrate being prepared by removing from the other principal surface side thereof a semiconductor monocrystalline region (2) present right beneath the light-transmitting film, a non-monocrystalline semiconductor element (4) formed on the light-transmitting film, and a monocrystalline semiconductor element (3) formed in a semiconductor monocrystalline region (1) remaining in the substrate, the non-monocrystalline semiconductor element and the monocrystalline semiconductor element being electrically connected.
Inventors
- 👤 Tetsuo C/O Canon Kabushiki Kaisha Asaba
- 👤 Masaru C/O Canon Kabushiki Kaisha Sakamamoto
- 👤 Yutaka C/O Canon Kabushiki Kaisha Genchi
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-03 16:35
CPC Classifications
G; G02; G02F; G02F1/00; G02F1/01; G02F1/13; G02F1/133; G02F1/1333; G02F1/1345; G02F1/13454; G02F1/136; G02F1/1362; G02F1/136277; H; H10; H10D; H10D84/00; H10D84/01; H10D84/02; H10D84/03; H10D84/038; H10D86/00; H10D86/201; H10D88/00; H10D88/01; H10P; H10P50/00; H10P50/60; H10P50/61; H10P50/613; G02F1/136281; G02F2202/00; G02F2202/10; G02F2202/105
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
82 words
A semiconductor device comprising; a substrate comprising a semiconductor monocrystalline substrate on one principal surface side of which a light-transmitting film is formed; said substrate being prepared by removing from the other principal surface side thereof a semiconductor monocrystalline region present right beneath said light-transmitting film; a non-monocrystalline semiconductor element formed on said light-transmitting film; and a monocrystalline semiconductor element formed in a semiconductor monocrystalline region remaining in said substrate; said non-monocrystalline semiconductor element and said monocrystalline semiconductor element being electrically connected.
Claim 2
Dependent Claim
25 words
The semiconductor device according to claim 1, wherein said non-monocrystalline semiconductor element comprises a semiconductor element formed of a polycrystalline silicon or an amorphous silicon.
Claim 3
Dependent Claim
25 words
The semiconductor device according to claim 1, wherein said semiconductor monocrystalline substrate comprises a silicon monocrystalline substrate having a (100) plane on its principal surface.
Claim 4
Dependent Claim
82 words
A liquid crystal display device comprising; a substrate comprising a semiconductor monocrystalline substrate on one principal surface side of which a light-transmitting film is formed; said substrate being prepared by removing from the other side principal surface thereof a semiconductor monocrystalline region present right beneath said light-transmitting film; an active matrix element formed on said light-transmitting film; and a drive circuit formed in a semiconductor monocrystalline region remaining in said substrate; said active matrix element and said drive circuit being electrically connected.
Claim 5
Dependent Claim
32 words
The liquid crystal display device according to claim 4, wherein said active matrix element comprises a thin film diode or thin film transistor formed of a polycrystalline silicon or an amorphous silicon.
Claim 6
Dependent Claim
27 words
The liquid crystal display device according to claim 4, wherein said semiconductor monocrystalline substrate comprises a silicon monocrystalline substrate having a (100) plane on its principal surface.
Claim 7
Dependent Claim
115 words
A process for fabricating a semiconductor device, comprising the steps of; forming an electric circuit on part of one principal surface of a semiconductor monocrystalline substrate, while forming an oxide film on another part of said principal surface and then forming a semiconductor element on the oxide film; wiring said electric circuit and said semiconductor element and electrically connecting them; forming an insulating film on said electric circuit and said semiconductor element; sealing a liquid crystal between a light-transmitting substrate different from said semiconductor monocrystalline substrate and said insulating film by the use of a sealing material; and etching said monocrystalline substrate to remove part thereof from its back surface of said one principal surface.
Claim 8
Dependent Claim
21 words
The process for fabricating a semiconductor device according to claim 7, wherein said semiconductor device is a liquid crystal display device.
Claim 9
Dependent Claim
38 words
The process for fabricating a semiconductor device according to claim 7, wherein said insulating film is comprised of a multi-layer film comprising a stress controlling layer capable of converting the internal stress of said substrate nto tensile stress.
Claim 10
Dependent Claim
26 words
The process for fabricating a semiconductor device according to claim 9, wherein said stress controlling layer comprises an SiNx film formed by low-pressure gas phase synthesis.
Claim 11
Dependent Claim
23 words
The process for fabricating a semiconductor device according to claim 9, wherein said stress controlling layer is deposited before the step of wiring.
Claim 12
Dependent Claim
26 words
The process for fabricating a semiconductor device according to claim 9, wherein said stress controlling layer comprises a silicon oxide film formed by gas phase synthesis.
Claim 13
Dependent Claim
90 words
A semiconductor device for driving and switching an array of optical elements, which device comprises: a substrate (100) having a mono-crystalline semiconductor peripheral portion (1) and a thinner light transmissive central portion (2); peripheral drive circuit elements (3) formed in the monocrystalline semiconductor peripheral portion (1) of said substrate (100); and active matrix elements (4), formed in non-monocrystalline material (8) integral with said substrate (100) located over the central portion (2) of said substrate (100), which active matrix elements (4) are electrically connected to said peripheral drive circuit elements (3).
References Cited (Backward Citations)
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