EP0600437A2
Expired / Lapsed
EP
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Gate defined transistor
Assignee: Texas Instruments Inc
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Filing: 1993-11-30
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Granted: —
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Expires: 2013-11-30
Abstract
Abstract A transistor (40) comprises a gate conductor (42) that includes a notch (62). The transistor (40) comprises a channel region (50) which has both a length and width dimension defined by the photolithographic patterning of gate conductor (42). The formation of bird's beak structures (76) and (78) associated with field oxide layer (72) and (74) will not affect the current carrying capability of the transistor (42). <IMAGE> <IMAGE>
Inventors
- 👤 Shivaling Mahant-Shetti
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-29 23:57
CPC Classifications
H; H10; H10D; H10D64/00; H10D64/20; H10D64/27; H10D64/311; H10D64/411; H10D64/511; H10D64/517; H10D64/519
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
107 words
A transistor formed proximate a surface of a semiconductor layer, comprising: a source region proximate the surface; a drain region proximate the surface and spaced apart from said source region defining a channel region in the semiconductor layer between said source and drain regions; and a gate conductor disposed proximate said channel region and insulated from said channel region, said gate conductor operable to electrically control the conductance of said channel region and comprising a notch proximate said channel region such that the length and width of the active portion of said channel region are substantially determined by the size of said gate conductor and said notch.
Claim 2
Dependent Claim
41 words
The transistor of claim 1 and further comprising: a bit line coupling said drain region to other drain regions of other transistors of a transistor array; and a bit line contact electrically connected to said bit line and said drain region.
Claim 3
Dependent Claim
149 words
The transistor of Claim 1 and further comprising: a word line conductor disposed outwardly from the surface of the semiconductor layer, said gate conductor comprising a portion of said word line conductor proximate said channel region; a first field insulator body disposed between the surface of the semiconductor layer and a portion of said word line conductor, said first field insulator body comprising a first bird's beak structure proximate said gate conductor and said channel region but spaced apart from said notch; a second insulator body disposed between the surface of the semiconductor layer and a portion of said word line conductor, said second insulator body comprising a second bird's beak structure proximate said gate conductor and said channel region but spaced apart from said notch; and a gate insulator layer disposed between said first and second bird's beak structures and between said channel region and said gate conductor.
Claim 4
Dependent Claim
296 words
An array of transistors formed proximate a surface of a semiconductor substrate, comprising: a word line conductor disposed proximate the surface of the semiconductor substrate and insulated from the substrate; a first source/drain region disposed proximate the surface of the substrate; a second source/drain region disposed proximate the surface of the substrate and spaced apart from said first source/drain region to define a first channel region between said first and second source/ drain regions, a first portion of said word line conductor comprising a first gate conductor disposed proximate said first channel region and insulated from said channel region and operable to electrically control said first channel region; a third source/drain region disposed proximate the surface of the substrate; a fourth source/drain region disposed proximate the surface of the substrate and spaced apart from said third source/drain region to define a second channel region between said third and fourth source/drain regions, a second portion of said word line conductor comprising a second gate conductor disposed proximate said second channel region and insulated from said channel region and operable to electrically control said second channel region; an extension body of said word line conductor integral with said word line conductor and extending from said word line conductor a predetermined distance between said second and fourth source/drain regions such that the length and width of the active portion of said first and second channel regions are substantially determined by the size of said gate conductor and said extension body; and said first and second source/drain regions, said first channel region, and said first gate conductor associated with a first transistor of the transistor array, said third and fourth source/drain regions, said second channel region, and said second gate conductor associated with a second transistor of the transistor array.
Claim 5
Dependent Claim
277 words
A transistor formed proximate a surface of a semiconductor substrate, comprising: a source region proximate the surface; a drain region proximate the surface and spaced apart from said source region defining a channel region of the substrate between said source and drain regions; and a gate conductor disposed proximate said channel region and insulated from said channel region, said gate conductor operable to electrically control the conductance of said channel region and comprising a notch proximate said channel region such that the length and width of the active portion of said channel region are substantially determined by the size of said gate conductor and said notch; a bit line coupling said drain region to other drain regions of other transistors of a transistor array; and a bit line contact electrically connected to said bit line and said drain region; a word line conductor disposed outwardly from the surface of the substrate, said gate conductor comprising a portion of said word line conductor proximate said channel region; a first field insulator body disposed between the surface of the substrate and a portion of said word line conductor, said first field insulator body comprising a first bird's beak structure proximate said gate conductor and said channel region but spaced apart from said notch; a second insulator body disposed between the surface of the substrate and a portion of said word line conductor, said second insulator body comprising a second bird's beak structure proximate said gate conductor and said channel region but spaced apart from said notch; and a gate insulator layer disposed between said first and second bird's beak structures and between said channel region and said gate conductor.
Claim 6
Independent Claim
115 words
A method for forming a transistor proximate a surface of a semiconductor substrate, comprising the steps of: forming a source region proximate the surface; forming a drain region proximate the surface and spaced apart from the source region defining a channel region of the substrate between the source and drain regions; and forming a gate conductor disposed proximate the channel region and insulated from the channel region, the gate conductor operable to electrically control the conductance of the channel region and comprising a notch proximate the channel region such that the length and width of the active portion of the channel region are substantially determined by the size of the gate conductor and the notch.
Claim 7
Dependent Claim
46 words
The method of claim 6 and further comprising the steps of: forming a bit line coupling the drain region to other drain regions of other transistors of a transistor array; and forming a bit line contact electrically connected to the bit line and the drain region.
Claim 8
Dependent Claim
153 words
The method of Claim 6 and further comprising the steps of: forming a word line conductor disposed outwardly from the surface of the substrate, the gate conductor comprising a portion of the word line conductor proximate the channel region; forming a first field insulator body disposed between the surface of the substrate and a portion of the word line conductor, the first field insulator body comprising a first bird's beak structure proximate the gate conductor and the channel region but spaced apart from the notch; forming a second insulator body disposed between the surface of the substrate and a portion of the word line conductor, the second insulator body comprising a second bird's beak structure proximate the gate conductor and the channel region but spaced apart from the notch; and forming a gate insulator layer disposed between the first and second bird's beak structures and between the channel region and the gate conductor.
Claim 9
Dependent Claim
20 words
An array of transistors, wherein the transistors include transistors as claimed in any of claims 1, 2, 3, and 5.
References Cited (Backward Citations)
No citation records indexed.
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