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EP0600160A2 Expired / Lapsed EP ⏱️ 0.0 years remaining

Semiconductor memory device with a test mode

Assignee: Texas Instruments Inc
•
Filing: 1993-08-12
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Granted: —
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Expires: 2013-08-12
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Abstract

Abstract A semiconductor memory device characterized by the fact that the dynamic test time of the semiconductor memory device can be shortened, and the power consumption can be cut. In the dynamic test for the semiconductor memory device in this invention, multiple word lines are selected at the same time with a prescribed interval corresponding to the element isolation layout. As the word lines are selected corresponding to the element isolating layout, the interference caused by the element isolation state can be excluded. Since multiple word lines are selected at the same time, the time of operation can be shortened. Since the word lines are maintained in the selected state while the sense amplifiers are not reset, there is no increase in the power consumption although multiple word lines are selected at the same time. <IMAGE>

Inventors

  • 👤 Kiyotaka C/O Texas Inst. Japan Ltd. Okuzawa
  • 👤 Yoshihiro C/O Texas Inst. Japan Ltd. Ogata
  • 👤 Takashi Inui

Bibliographic Details

Application Number —
Jurisdiction EP
Data Source google_patents
Last Synchronized 2026-10-28 16:49
CPC Classifications
G; G11; G11C; G11C29/00; G11C29/04; G11C29/08; G11C29/12; G11C29/18; G11C29/30; G11C29/34

Claims Analysis

Total Claims: 2
Claim 1
Independent Claim 102 words
A type of semiconductor memory device characterized by the fact that it consists of the following parts: memory cells arranged in a matrix configuration, bit lines and word lines used for selecting the aforementioned memory cells, sense amplifiers connected to the aforementioned bit lines, and an address decoder circuit, which has a test mode in which multiple word lines can be selected almost at the same time with a prescribed interval corresponding to the element isolating layout of the memory cells, and which is connected to the aforementioned word line and selectively drives the aforementioned word line corresponding to the address signal.
Claim 2
Dependent Claim 60 words
The semiconductor memory device described in Claim 1 characterized by the fact that when the aforementioned address decoder circuit is in the aforementioned test mode, the aforementioned word lines are driven in sequence with a prescribed delay time, and the operation is performed appropriately to ensure that when the aforementioned word lines are driven, the sense amplifier is not reset.

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