EP0588577A2
Expired / Lapsed
EP
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Hermetically sealed integrated circuits
Assignee: Dow Silicones Corp
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Filing: 1993-09-13
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Granted: —
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Expires: 2013-09-13
Abstract
Abstract The present invention provides hermetically sealed integrated circuits which can have a standardized arrangement of external contacts. These circuits comprise a circuit subassembly (1) having external contacts (2). Onto the surface of the subassembly surrounding the external contacts is formed a first ceramic passivating layer (3). Next, a non-corroding, conductive layer (4) is formed on the external contacts and portions of the first ceramic passivating layer. Then a second ceramic passivating layer (6) is formed on the non-corroding, conductive layer and that portion of the first passivating layer not covered by the non-corroding, conductive layer. Finally, the second passivating layer is etched through to the conductive layer to allow external contact with the circuit. The present invention also relates to methods for producing the above integrated circuits.
Inventors
- 👤 Jack S. Kilby
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-09 15:07
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/40; H10W20/45; H10W20/48; H10W70/00; H10W70/60; H10W72/00; H10W72/20; H10W72/29; H10W72/50; H10W72/59; H10W72/90; H10W72/921; H10W72/922
Claims Analysis
Total Claims: 20
Claim 1
Independent Claim
99 words
A hermetically sealed integrated circuit having a standardized arrangement of external contacts comprising: a circuit subassembly having external contacts; a first ceramic passivating layer on the surface of the subassembly with openings for the external contacts; a non-corroding, conductive layer covering the external contacts and a portion of the first ceramic passivating layer; and a second ceramic passivating layer covering the non-corroding, conductive layer and that portion of the first passivating layer not covered by the conductive layer; wherein openings are formed through the second passivating layer to the conductive layer to allow external contact in a standardized arrangement.
Claim 2
Dependent Claim
24 words
The circuit of claim 1 wherein both the first and second passivating layers consist of one or more ceramic coatings comprising silicon-containing ceramic materials.
Claim 3
Dependent Claim
24 words
The circuit of claim 1 wherein the first passivating layer comprises a silica coating and the second passivating layer comprises a silicon carbide coating.
Claim 4
Dependent Claim
25 words
The circuit of claim 1 further characterized by having a first conductive layer positioned between said first ceramic passivating layer and said non-corroding, conductive layer.
Claim 5
Dependent Claim
69 words
An integrated circuit having a primary passivation and one or more open external contacts, comprising; a non-corroding, conductive layer covering the open external contacts and a portion of the passivating layer; and a ceramic layer covering the non-corroding, conductive layer and that portion of the passivating layer not covered by the conductive layer; wherein openings are formed through the ceramic layer to the conductive layer to allow external contact.
Claim 6
Dependent Claim
20 words
The circuit of claim 5 wherein the ceramic layer consists of one or more ceramic coatings comprising silicon-containing ceramic material.
Claim 7
Dependent Claim
20 words
The circuit of claims 1 or 5 wherein the silicon-containing ceramic material is deposited by a chemical vapor deposition technique.
Claim 8
Dependent Claim
37 words
The circuit of claims 1 or 5 wherein the silicon-containing ceramic material is deposited by a process comprising applying a coating comprising a preceramic silicon-containing material followed by converting the preceramic material to the silicon-containing ceramic material.
Claim 9
Dependent Claim
33 words
The integrated circuit of claims 1 or 5 wherein the non-corroding, conductive layer is made of a material selected from the group consisting of gold, silver, tungsten, solder, silver filled epoxy and copper.
Claim 10
Dependent Claim
34 words
The integrated circuit of claims 1 or 5 wherein the ceramic layer is selected from the group consisting of silicon oxides, silicon nitride, silicon oxynitride, silicon oxycarbide, silicon carbonitride, silicon oxycarbonitride and silicon carbide.
Claim 11
Dependent Claim
17 words
The integrated circuit of claims 1 or 5 wherein the preceramic silicon-containing material is hydrogen silsesquioxane resin.
Claim 12
Dependent Claim
43 words
The integrated circuit of claims 1 or 5 wherein the preceramic silicon-containing material is hydrolyzed or partially hydrolyzed R n Si(OR) 4-n , in which each R is independently an aliphatic, alicyclic or aromatic substituent of 1-20 carbon atoms and n is 0-3.
Claim 13
Dependent Claim
43 words
The integrated circuit of claims 1 or 5 wherein the preceramic silicon-containing material is hydrolyzed or partially hydrolyzed R n Si(OR) 4-n , in which each R is independently an aliphatic, alicyclic or aromatic substituent of 1-4 carbon atoms and n is 0-1.
Claim 14
Dependent Claim
57 words
The integrated circuit of claims 1 or 5 wherein the ceramic material is covered by one or more additional ceramic layers selected from the group consisting of SiO₂ coatings, SiO₂/ceramic oxide coatings, silicon coatings, silicon carbon containing coatings, silicon nitrogen containing coatings, silicon oxygen nitrogen containing coatings, silicon carbon nitrogen containing coatings and diamond like carbon coatings.
Claim 15
Dependent Claim
28 words
The integrated circuit of claims 1 or 5 which has been interconnected and embedded within a material selected from the group consisting of organic encapsulants and silicone encapsulants.
Claim 16
Dependent Claim
19 words
The integrated circuit of claims 1 or 5 wherein the ceramic layers are opaque to ultraviolet or visible light.
Claim 17
Dependent Claim
23 words
The integrated circuit of claims 1 or 5 wherein a barrier metal layer is formed between the external contacts and the conductive layer.
Claim 18
Dependent Claim
30 words
The integrated circuit of claims 1 or 5 wherein the barrier metal layer is selected from the group consisting of titanium, an alloy of titanium and tungsten and titanium nitride.
Claim 19
Dependent Claim
103 words
A method of forming the integrated circuit of claim 1 comprising: applying a first ceramic passivating layer on the surface of an integrated circuit having external contacts; removing at least a portion of the first passivating layer covering the external contacts; applying a non-corroding, conductive layer over the external contacts and a portion of the first ceramic passivating layer; applying a second ceramic passivating layer over the non-corroding, conductive layer and that portion of the first passivating layer not covered by the conducting layer; and removing at least a portion of the second passivating layer covering the conducting layer to allow external contact.
Claim 20
Dependent Claim
82 words
A method for hermetically sealing the integrated circuit of claim 5 having a primary passivation and one or more open external contacts, the method comprising: applying a non-corroding, conductive layer over the open external contacts and a portion of the primary passivation; applying a ceramic layer over the non-corroding, conductive layer and that portion of the passivating layer not covered by the conducting layer; and removing at least a portion of the ceramic layer covering the conducting layer to allow external contact.
References Cited (Backward Citations)
No citation records indexed.
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