Patent US2035861A successfully refreshed from Google Patents.
EP0574100A2
Expired / Lapsed
EP
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Plasma CVD method and apparatus therefor
Assignee: Mitsubishi Heavy Industries Ltd
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Filing: 1993-03-22
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Granted: —
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Expires: 2013-03-22
Abstract
Abstract This invention provides a plasma CVD method aimed at forming an amorphous silicon thin film on a large-area substrate at a high speed and also an apparatus therefor. The method and apparatus are characterized by a reaction vessel (1), means (7,8) for feeding a reactant gas to the reaction vessel and discharging the same, discharging electrodes (2,3) accommodated in the reaction vessel, a source (4) for supplying power for glow discharge to the discharging electrodes, two pairs of solenoid coils (5a,100a,100b) arranged on opposite sides of said reaction vessel and so disposed that the axes thereof perpendicularly intersect each other as well as perpendicularly the electric field formed between the discharging electrodes, and an AC source (103) for supplying power to said solenoid coils for magnetic field generation, whereby an amorphous silicon thin film is formed on a substrate (10) held to intersect perpendicularly the electric field between the discharging electrodes.
Inventors
- 👤 Masayoshi c/o Nagasaki Res. Dev. Center Murata
- 👤 Yoshiaki c/o Nagasaki Res. Dev. Center Takeuchi
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-09 06:40
CPC Classifications
H; H01; H01J; H01J37/00; H01J37/32; H01J37/32009; H01J37/32082; C; C23; C23C; C23C16/00; C23C16/22; C23C16/24; C23C16/44; C23C16/50; C23C16/505; C23C16/509; C23C16/5096; H01J37/32431; H01J37/32623; H01J37/3266; H01J2237/00; H01J2237/32; H01J2237/33; H01J2237/332; H01J2237/3322; H01J2237/3325; H01J2237/3326
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
69 words
A plasma CVD method whereby a substrate is set in a reaction vessel, a reactant gas is fed, and a glow discharge plasma is produced between discharging electrodes to form an amorphous (noncrystalline) thin film on the substrate, characterized in that magnetic fields are applied by two pairs of solenoid coils perpendicularly intersecting an electric field between the discharging electrodes and in two directions which perpendicularly intersect each other.
Claim 2
Dependent Claim
75 words
A plasma CVD method whereby a substrate is set in a reaction vessel, a reactant gas is fed, and a glow discharge plasma is produced between discharging electrodes to form an amorphous (noncrystalline) thin film on the substrate, characterized in that a magnetic field is applied by a rotating magnetic field means so that the magnetic field rotates at a constant angular velocity on a plane perpendicularly intersecting the electric field between the discharging electrodes.
Claim 3
Dependent Claim
98 words
The method of claim 2 characterized in that said rotating magnetic field means comprises two solenoid coils and a sinusoidal AC source of the same frequency for supplying a current to the solenoid coils for the generation of a magnetic fields, said two solenoid coils being so disposed that the magnetic fields they produce perpendicularly intersect each other as well as perpendicularly the electric field that the discharging electrodes form, said two solenoid coils being supplied with currents of different phases from the above AC source, whereby the resultant magnetic field is rotated at a constant angular velocity.
Claim 4
Dependent Claim
133 words
A plasma CVD apparatus comprising a reaction vessel, means for feeding a reactant gas to the reaction vessel and discharging the same, discharging electrodes accommodated in the reaction vessel, and a source for supplying power for glow discharge to the discharging electrodes, so as to form an amorphous (noncrystalline) thin film on a substrate held within the reaction vessel, characterized in that said substrate is held to intersect perpendicularly an electric field formed between the discharging electrodes, said apparatus further comprising two pairs of solenoid coils so disposed that the axes thereof intersect perpendicularly the electric field between the discharging electrodes and intersect perpendicularly each other, said solenoid coils being arranged on opposite sides of said reaction vessel, and an AC source for supplying power to said solenoid coils for magnetic field generation.
Claim 5
Dependent Claim
158 words
A plasma CVD apparatus comprising a reaction vessel, means for feeding a reactant gas to the reaction vessel and discharging the same, discharging electrodes accommodated in the reaction vessel, and a source for supplying power for glow discharge to the discharging electrodes, so as to form an amorphous (noncrystalline) thin film on a substrate held within the reaction vessel, characterized in that said substrate is held to intersect perpendicularly an electric field formed between the discharging electrodes, said apparatus further comprising two solenoid coils so disposed that the magnetic fields they produce perpendicularly intersect each other as well as perpendicularly the electric field that the discharging electrodes form, and a sinusoidal AC source of the same frequency for supplying currents to the solenoid coils for magnetic field generation, said two solenoid coils being supplied with currents of different phases from the above AC source, whereby a resultant magnetic field is applied which rotates at a constant angular velocity.
References Cited (Backward Citations)
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