EP0571108A1
Expired / Lapsed
EP
⏱️ 0.0 years remaining
Semiconductor contact via structure and method
Assignee: STMicroelectronics lnc USA
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Filing: 1993-05-06
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Granted: —
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Expires: 2013-05-06
Abstract
Abstract A method is provided for forming an integrated circuit contact structure. A conductive region (12) is formed on a semiconductor device (10). Thereafter an insulating layer (14,16,18) is formed over the conductive region (10). An opening (22) is then formed through the insulating region (14,16,18) to the conductive region (12). A thin barrier layer (26) is deposited over the integrated circuit contact structure. A portion of the thin barrier layer (26) is removed by backsputtering the integrated circuit contact structure so that only a thin barrier sidewall (28) remains. Finally, a conductive metal (30) layer is deposited over the integrated circuit contact structure. In one embodiment, the integrated circuit contact structure is baked before the conductive metal layer (30) is deposited.
Inventors
- 👤 Fusen E. Chen
- 👤 Girish A. Dixit
- 👤 Che-Chia Wei
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-06 17:34
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/40; H10W20/41; H10W20/42; H10W20/01; H10W20/071; H10W20/074; H10W20/076; H10W20/081; H10W20/082; H10W20/45; H10W20/47; H10W20/48
Claims Analysis
Total Claims: 21
Claim 1
Independent Claim
80 words
A method for forming an integrated circuit contact structure, comprising the steps of: forming a conductive region on a semiconductor device; forming an insulating layer over the conductive region; forming an opening through the insulating layer to the conductive region; depositing a thin barrier layer over the integrated circuit contact structure; backsputtering the integrated circuit contact structure to remove at least a portion of the thin barrier layer; and depositing a conductive metal layer over the integrated circuit contact structure.
Claim 2
Dependent Claim
37 words
The method according to Claim 1, wherein the step of forming an insulating layer further comprises the steps of: forming a first conformal insulating layer; forming a planarizing insulating layer; and forming a second conformal insulating layer.
Claim 3
Dependent Claim
23 words
The method according to Claim 2, wherein the step of forming a first conformal insulating layer further comprises depositing a layer of oxide.
Claim 4
Dependent Claim
26 words
The method according to Claim 2, wherein the step of forming a planarizing insulating layer further comprises the step of depositing a layer of spin-on glass.
Claim 5
Dependent Claim
26 words
The method according to Claim 2, wherein the step of forming a planarizing insulating layer further comprises the step of depositing a layer of reflow glass.
Claim 6
Dependent Claim
24 words
The method according to Claim 2, wherein the step of forming a second conformal insulating layer further comprises depositing a layer of undoped oxide.
Claim 7
Dependent Claim
49 words
The method according to Claim 1, wherein the step of forming an opening further comprises the steps of: performing an isotropic etch partially through the insulating layer; and performing an anisotropic etch through the insulating layer following the isotropic etch, wherein a portion of the conductive region is exposed.
Claim 8
Dependent Claim
26 words
The method according to Claim 1, further comprising the step of, before the step of depositing a conductive metal layer, baking the integrated circuit contact structure.
Claim 9
Dependent Claim
14 words
The method according to Claim 8, wherein the thin barrier layer is amorphous silicon.
Claim 10
Dependent Claim
13 words
The method according to Claim 8, wherein the thin barrier layer is oxide.
Claim 11
Dependent Claim
43 words
A contact structure in an integrated circuit, comprising: a semiconductor substrate having a conductive region; an insulating layer overlying the conductive region; an opening through the insulating layer to the conductive region; and a thin barrier sidewall along a sidewall of the opening.
Claim 12
Dependent Claim
15 words
The contact structure according to Claim 11, wherein the thin barrier sidewall comprises amorphous silicon.
Claim 13
Dependent Claim
14 words
The contact structure according to Claim 11, wherein the thin barrier sidewall comprises oxide.
Claim 14
Dependent Claim
27 words
The contact structure according to Claim 11, wherein the insulating layer comprises: a first conformal insulating layer; a planarizing insulating layer; and a second conformal insulating layer.
Claim 15
Dependent Claim
18 words
The contact structure according to Claim 14, wherein the first conformal insulating layer comprises a layer of oxide.
Claim 16
Dependent Claim
19 words
The contact structure according to Claim 14, wherein the second conformal insulating layer comprises a layer of undoped oxide.
Claim 17
Dependent Claim
18 words
The contact structure according to Claim 14, wherein the planarizing insulating layer comprises a layer of spin-on glass.
Claim 18
Dependent Claim
18 words
The contact structure according to Claim 14, wherein the planarizing insulating layer comprises a layer of reflow glass.
Claim 19
Dependent Claim
16 words
The contact structure according to Claim 18, wherein the layer of reflow glass comprises phospo-silicate glass.
Claim 20
Dependent Claim
16 words
The contact structure according to Claim 18, wherein the layer of reflow glass comprises boro-phospo-silicate glass.
Claim 21
Dependent Claim
36 words
The contact structure according to Claim 17, wherein the layer of spin-on glass comprises regions having a lesser water content, wherein the regions are a result of baking the contact structure after the opening is formed.
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