EP0570618A1
Expired / Lapsed
EP
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Film forming method and apparatus
Assignee: Nissin Electric Co Ltd
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Filing: 1992-07-15
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Granted: —
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Expires: 2012-07-15
Abstract
Abstract A method and apparatus for radiation of ions from an ion source (40) onto a surface of an objective substrate T and vacuum evaporation of a predetermined material from an evaporation source (50) onto the surface of the substrate, simultaneously while the substrate is continuously moved. The ion radiation from the ion source (40) is applied to a portion of a region reached by the evaporation material from the evaporation source (50), upstream relative to the direction of movement of the substrate from the center of that region (A) and which is lower in evaporation speed than the center of the region, to thereby continuously form a mixture layer of substrate material atoms and evaporation material atoms on the surface of the substrate and then continuously form a vacuum evaporation film with a predetermined thickness on the mixture layer.
Inventors
- 👤 Akinori c/o Nissin Elec. Co. Ltd. Ebe
- 👤 Satoshi c/o Nissin Elec. Co. Ltd. Nishiyama
- 👤 Kiyoshi c/o Nissin Elec. Co. Ltd. Ogata
- 👤 Yasuo c/o Nissin Elec. Co. Ltd. Suzuki
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-09 02:23
CPC Classifications
C; C23; C23C; C23C14/00; C23C14/02; C23C14/027; C23C14/021; C23C14/022; C23C14/22; C23C14/56; C23C14/562
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
148 words
A method for forming a film of an evaporation material on a substrate, said method comprising the steps of: forming a mixture layer on a surface of the substrate, the mixture layer including atoms of both the substrate material and the evaporation material, by vacuum evaporation of a predetermined amount of the evaporation material from an evaporation source to said surface and radiation of ions from an ion source to said surface during movement of said substrate in a predetermined direction; and forming a film with a predetermined thickness of the evaporation material on said mixture layer from said evaporation source by vacuum evaporation while said substrate is continuously moved in a direction the same as or opposite to said predetermined direction after said mixture layer has been at least partially formed on a predetermined portion of said surface of said substrate by the mixture layer forming step.
Claim 2
Independent Claim
158 words
A method for forming a film of an evaporation material on a substrate, said method comprising the steps of: radiating ions from an ion source onto a surface of the substrate and, at the same time, vacuum evaporating a predetermined amount of the evaporation material from an evaporation source onto said surface of laid substrate while continuously moving said substrate, said ion radiation being applied to a portion of the substrate surface located upstream, relative to the direction of substrate movement, from a central part of a region reached by evaporation of the evaporation material from said evaporation source, evaporation speed being lower in the upstream portion than at the central part of said region, so that a mixture layer of atoms of the substrate and the evaporation materials is formed continuously on said surface of said substrate; and then forming a vacuum evaporation film with a predetermined thickness of the evaporation material continuously on said mixture layer.
Claim 3
Dependent Claim
59 words
The film forming method according to claim 2, in which a part of said ion radiation is simultaneously applied to an added upstream portion of the substrate located outside said region reached by the evaporation of the evaporation material from said evaporation source, so that said surface of said substrate is pretreated before the formation of said mixture layer.
Claim 4
Dependent Claim
63 words
The film forming method according to claim 2 or 3, in which said ion radiation for forming said mixture layer is carried out so that the ratio (M/N) of the number M atoms of evaporation material to the number N ions reaching said surface of said substrate per unit time and per unit area is in a range of from 10 to 1000.
Claim 5
Dependent Claim
121 words
A film forming apparatus comprising: means for continuously moving an objective substrate, said means being arranged to move said substrate in a predetermined direction in a step of forming a mixture layer of substrate material atoms and evaporation material atoms from said evaporation source and to move said substrate in the direction the same as or opposite to said predetermined direction in case of forming said mixture layer, in another step of forming a film with a predetermined thickness from said evaporation source on said mixture layer by vacuum evaporation; an evaporation source for vacuum evaporation of a predetermined material onto the surface of said moving substrate; and an ion source for radiating ions toward the surface of said moving substrate.
Claim 6
Dependent Claim
140 words
A film forming apparatus comprising: means for continuously moving an objective substrate; an evaporation source for vacuum evaporation of a predetermined material onto a surface region of said moving substrate; and an ion source for radiating ions toward said surface of said moving substrate, said ion source being disposed so that said ion radiation from said ion source is applied to a portion of said surface region located upstream from a central portion of the surface region in the direction of movement of said substrate which upstream portion is lower in evaporation speed than the central portion of the surface region, so that a mixture layer of substrate material atoms and evaporation material atoms is continuously formed on said surface of said substrate and then a vacuum evaporation film with a predetermined thickness is continuously formed on said mixture layer.
Claim 7
Dependent Claim
59 words
A film forming apparatus according to claim 6, in which said ion source is disposed so that a part of said ion radiation is simultaneously applied to the substrate surface upstream from said surface region reached by the evaporation material from said evaporation source, whereby said surface of said substrate is pretreated before the formation of said mixture layer.
Claim 8
Dependent Claim
71 words
The film forming apparatus according to claim 6 or 7, in which said ion source is disposed so that said ion radiation for forming said mixture layer is carried out so that the ratio (M/N) of the number M of evaporation material atoms to the number N of ions reaching said surface of said substrate per unit time and per unit area is in a range of from 10 to 1000.
References Cited (Backward Citations)
EP0269112A2
Cited
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