EP0570224A2
Expired / Lapsed
EP
⏱️ 0.0 years remaining
Semiconductor device
Assignee: Seiko Instruments Inc
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Filing: 1993-05-13
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Granted: —
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Expires: 2013-05-13
Abstract
Abstract A semiconductor element has a laminated structure comprising a single crystal silicon thin film layer 2, one surface of which has a thermally oxidised silicon film 1. Semiconductor circuit elements are formed on or in the other surface of the layer 2 and are protected by a silicon oxide or nitride layer 3. The latter is covered by an element smoothing layer 4 to smooth the uneven surface of the layer 3. The single crystal silicon thin film layer 2 with the element smoothing layer is adhered to a supporting substrate 6 by a fluoro-epoxy series resin adhesive layer 5. The material of the substrate 6 is chosen so that the difference of coefficients of thermal expansion of substrate and single crystal layer is less than 1.5 x 10 -6 /°C.
Inventors
- 👤 Tadao C/O Seiko Instruments Inc. Iwaki
- 👤 Tsuneo C/O Seiko Instruments Inc. Yamazaki
- 👤 Katsuki c/o Seiko Instruments Inc. Matsushita
- 👤 Shigeru C/O Seiko Instruments Inc. Senbonmatsu
- 👤 Ryuichi c/o Seiko Instruments Inc. Takano
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-05 03:10
CPC Classifications
G; G02; G02F; G02F1/00; G02F1/01; G02F1/13; G02F1/133; G02F1/1333; G02F1/1345; G02F1/13454; G06; G06E; G06E3/00; G06E3/001; G06E3/003; H; H10; H10D; H10D86/00; H10D86/201; H10P; H10P90/00; H10P90/19; H10P90/1904; H10P90/1906; H10P90/1914; H10W; H10W72/00; H10W72/071; H10W72/073; H10W72/30; G02F2202/00; G02F2202/10; G02F2202/105; H10W72/90; H10W72/921; H10W72/923; H10W72/931; H10W72/934
Claims Analysis
Total Claims: 17
Claim 1
Independent Claim
51 words
A semiconductor element comprising a laminated structure of a single crystal silicon thin film layer (2), at least one semiconductor circuit element formed on or in the surface of the single crystal silicon thin film layer, an element smoothing layer (4), a resin adhesive layer 5 and a supporting substrate (6).
Claim 2
Dependent Claim
59 words
An element according to claim 1, including an insulating layer (3) formed between the element smoothing layer (4) and the single crystal silicon thin film layer (2), for protecting the semiconductor circuit element, and a silicon oxide layer (1) formed on the surface of the single crystal silicon thin film layer (2), opposite to the element smoothing layer (4).
Claim 3
Dependent Claim
75 words
An element according to claim 2, wherein the semiconductor circuit element includes an insulating gate field effect type transistor which has a source region (11) formed in the single crystal silicon thin film layer (2), a drain region (12), a channel region (45) formed between the source region (11) and the drain region (12), and a gate electrode (10) formed on the side of the element protective insulating layer (3) over the channel region (45).
Claim 4
Dependent Claim
31 words
An element according to claim 1 or 2, wherein the semiconductor circuit element includes an optical detecting element comprising a PN junction formed in the single crystal silicon thin film layer.
Claim 5
Dependent Claim
52 words
An element according to claim 4, wherein the optical detecting element includes a PIN type junction comprising a P-type region (19) formed in the single crystal silicon thin film layer (2), an I-type region (23) interfacing with the P-type region (19), and an N-type region (20) interfacing with the I-type region (23).
Claim 6
Dependent Claim
54 words
An element according to any preceding claim, including at least one second semiconductor circuit element formed on or in the surface of a single crystal silicon substrate (6a) adjacent the resin adhesive layer (5) and a second element smoothing layer (4a) formed between the resin adhesive layer (5) and the second semiconductor circuit element.
Claim 7
Dependent Claim
53 words
An element according to claim 6, wherein the second semiconductor circuit element formed in the single crystal silicon substrate (6a) is electrically connected with the semiconductor circuit element formed in the single crystal silicon thin film layer (2) through a through hole (8) formed in the smoothing layers and the resin adhesive layer.
Claim 8
Dependent Claim
133 words
A liquid crystal light valve comprising: a drive substrate (26) on which a drive electrode and a drive circuit for exciting the drive electrode in accordance with a predetermined signal are formed; an opposed substrate (49) arranged opposite the drive substrate; and a liquid crystal layer (46) arranged between the drive substrate (26) and opposed substrate (49), the drive substrate (26) being formed as a semiconductor element according to any of claims 1 to 7, the drive circuit being formed as a semiconductor circuit element in the single crystal silicon thin film layer thereof, and the drive electrode being arranged integrally on the single crystal silicon thin film layer, whereby an optical change is obtained by the effect on the liquid crystal layer when the drive electrode is excited by the drive circuit.
Claim 9
Dependent Claim
34 words
A valve according to claim 8, wherein the drive circuit includes a matrix of drive elements and the drive electrode is formed as a matrix of pixel electrodes excited selectively by the drive elements.
Claim 10
Dependent Claim
82 words
A semiconductor optical detector comprising a drive circuit for exciting a semiconductor optical detecting element in accordance with a predetermined signal, and a drive circuit substrate, the drive substrate being formed in a single crystal silicon thin film adhered on a supporting substrate, and the drive circuit being arranged integrally on the single crystal silicon thin film, whereby an optical detection signal is obtained by the effect on the optical detection element when the drive electrode is excited by the drive circuit.
Claim 11
Dependent Claim
44 words
A detector according to claim 10, wherein a matrix of optical detecting elements and in the form of silicon photo diodes, is formed, the drive circuit scanning and detecting the signals from the silicon photo diodes by way of a matrix of drive electrodes.
Claim 12
Independent Claim
97 words
A method of manufacturing a semiconductor thin film element substrate comprising adhering two single crystal silicon wafers (25, 38), polishing and etching one single crystal silicon wafer (38) to form a single crystal silicon thin film (2), and forming a semiconductor circuit (10, 11, 12, 14, 45) on the single crystal silicon thin film; forming an element smoothing layer (4) on the semiconductor circuit element of the single crystal silicon thin film; adhering a supporting substrate (6) to element smoothing layer (4) by a resin adhesive layer (5), and removing the other single crystal silicon wafer (25).
Claim 13
Dependent Claim
71 words
An image detecting device comprising a light emitting means (52), a first image displaying means (54) illuminated from the light emitting means (52), an optical detecting means (56) for receiving a converted image obtained by converting an image formed on the first image displaying means (54) by way of a Fourier lens (55) and a second image displaying means (60) for displaying an image signal from the optical detecting means (71).
Claim 14
Dependent Claim
20 words
A device according to claim 13, wherein the optical detecting means is a detector according to claim 10 or 11.
Claim 15
Dependent Claim
21 words
A device according to claim 13, wherein the image displaying means includes a light valve according to claim 8 or 9.
Claim 16
Dependent Claim
183 words
An optical correlation system comprising a first image detecting means (64) for inputting image information, a first drive means (65) for converting a reference image signal and an image signal from the first image detecting means into a display image signal, a first image displaying means (69) for displaying the display image signal from the first drive means, a first light emitting means (67) for illuminating the first image displaying means, a second image detecting means (71) for receiving as a Fourier transform image information based on light from the first image displaying means (69) by way of a first Fourier transfer lens (70), a second drive means (72) for converting image information from the second image detecting means into a display signal, a second image displaying means (75) for displaying an image by input signals from the second drive means, a second light emitting means (73) for illuminating the second image display means (75) and a third image detecting means (77) for receiving information based on light from the second image display means by way of a second Fourier transform lens (76).
Claim 17
Dependent Claim
26 words
A system according to claim 16, wherein the first or second image display means comprises a liquid crystal light valve according to claim 8 or 9.
References Cited (Backward Citations)
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