EP0569259A2
Expired / Lapsed
EP
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Multiquantum barrier field effect transistor
Assignee: Furukawa Electric Co Ltd
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Filing: 1993-05-10
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Granted: —
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Expires: 2013-05-10
Abstract
Abstract A field effect transistor having an excellent transfer conductance and an improved gate leakage current and breakdown voltage is provided. In the transistor, a multiquantum barrier gate structure 4 is arranged along a channel layer 3 and having an effect of reflecting incident carriers as waves in with phase conditions capable of allowing mutual enhancement of the incident and reflected waves in a region between a channel layer 3 and a gate electrode 10 and/or in a region opposite to the gate electrode 10 relative to the channel layer 3. <IMAGE>
Inventors
- 👤 Michinori Irikawa
- 👤 Kenichi Iga
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-28 10:12
CPC Classifications
H; H10; H10D; H10D62/00; H10D62/80; H10D62/81; H10D62/815; H10D62/8161; H10D62/8162; H10D62/8164; H10D30/00; H10D30/40; H10D30/47; H10D30/471; H10D30/473; H10D30/4732; H10D30/80; H10D30/801; H10D64/00; H10D64/60; H10D64/602
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
60 words
A multiquantum barrier transistor comprising multiquantum barrier stricture arranged along channel layer and having an effect of reflecting incident carriers as waves in phase conditions capable of allowing mutual enhancement of the incident and reflected waves in a region between channel layer and a gate electrode and/or in a region opposite to the gate electrode relative to the channel layer.
Claim 2
Dependent Claim
18 words
A multiquantum barrier transistor according to claim 1, wherein the multiquantum barrier structure comprises a strained superlattice layer.
References Cited (Backward Citations)
No citation records indexed.
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