EP0565212A2
Expired / Lapsed
EP
⏱️ 0.0 years remaining
Iodine etch process for silicon and silicides
Assignee: Applied Materials Inc
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Filing: 1987-12-18
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Granted: —
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Expires: 2007-12-18
Abstract
Abstract A process for etching single crystal silicon, polysilicon, silicide and polycide using iodide gas chemistry, is disclosed. The iodide gas chemistry etches narrow deep trenches (10) with very high aspect ratios and good profile control and without black silicon formation or other undesirable phenomena.
Inventors
- 👤 Jerry Yuen Kui Wong
- 👤 David Nin-Kou Wang
- 👤 Mei Chang
- 👤 Alfred W. S. Mak
- 👤 Dan Maydan
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-30 07:41
CPC Classifications
H; H10; H10P; H10P50/00; H10P50/20; H10P50/26; H10P50/264; H10P50/266; H10P50/267; H10P50/268; H10P50/24; H10P50/242; H10W; H10W10/00; H10W10/01; H10W10/011; H10W10/014; H10W10/0145; H10W10/10; H10W10/17
Claims Analysis
Total Claims: 15
Claim 1
Independent Claim
52 words
A process for etching the surface of a silicon body in a chamber at below atmospheric pressure, comprising exposing the body to a plasma formed by communicating into said chamber a reactive gas mixture comprising an etchant gas of hydrogen iodide, and applying a magnetic field generally parallel to the silicon surface.
Claim 2
Dependent Claim
24 words
The silicon etch process of Claim 1, the magnetic field being slowly rotated while being maintained parallel to the silicon surface for etch uniformity.
Claim 3
Dependent Claim
54 words
A process for etching a surface of a refractory silicide body in a chamber at below atmospheric pressure, comprising exposing the body to a plasma formed by communication into said chamber a reactive gas mixture comprising an etchant gas of hydrogen iodide, and applying a magnetic field generally parallel to the refractory silicide surface.
Claim 4
Dependent Claim
27 words
The silicon etch process of Claim 3, the magnetic field being rotated at a low rate while being maintained parallel to the silicon surface for etch uniformity.
Claim 5
Dependent Claim
62 words
A process for etching an exposed surface of a composite comprising a layer of silicide and a layer of silicon in a chamber at below atmospheric pressure, comprising exposing the composite to a plasma formed by communicating into said chamber a reactive gas mixture comprising an etchant gas selected of hydrogen iodide, and applying a magnetic field generally parallel to said surface.
Claim 6
Dependent Claim
19 words
The etch process of Claim 5, the magnetic field being rotated slowly parallel to said surface for etch uniformity.
Claim 7
Dependent Claim
21 words
The etch process of Claim 2, 4 or 6, the magnitude of the magnetic field being selected for controlling etch profile.
Claim 8
Dependent Claim
21 words
The etch process of Claim 2, 4 or 6, the magnitude of the magnetic field being selected for controlling etch rate.
Claim 9
Dependent Claim
26 words
The etch process of Claim 2, 4 or 6, the magnitude of the magnetic field being selected to decrease bombardment of said surface and resulting damage.
Claim 10
Dependent Claim
40 words
A process for etching a silicon body in a low pressure vacuum chamber comprising the step of exposing the body to a plasma formed by communicating into said chamber a reactive gas mixture comprising an etchant gas of hydrogen iodide.
Claim 11
Dependent Claim
25 words
The process of Claim 10, the reactive gas being a mixture comprising principally hydrogen iodide doped with one or more preselected quantity of chlorinate gas.
Claim 12
Dependent Claim
14 words
The process of Claim 11, the reactive gas mixture further comprising a diluent gas.
Claim 13
Dependent Claim
19 words
The process of Claim 12, the reactive gas mixture being doped with one or more preselected quantity of oxygen.
Claim 14
Dependent Claim
24 words
The process of any of Claims 11 to 13, the reactive gas being HI and the chlorinate gas being selected from Cl₂ and SiCl₄.
Claim 15
Dependent Claim
22 words
The process of Claim 14, further comprising, as a preliminary step, communicating SiF₄ gas into the chamber to etch clean the wafer.
References Cited (Backward Citations)
No citation records indexed.
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