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EP0564280A2 Expired / Lapsed EP ⏱️ 0.0 years remaining

Circuit for generating an internal source voltage

Assignee: Samsung Electronics Co Ltd
•
Filing: 1993-03-31
•
Granted: —
•
Expires: 2013-03-31
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Abstract

Abstract A circuit for generating an internal source voltage (int.Vcc) applied to the memory elements of a semiconductor device includes a reference voltage generating circuit (100) for generating a reference voltage (Vref), a comparator (200) for comparing the internal source voltage (int.Vcc) with the reference voltage (Vref), a driver (90) for driving an external source voltage (ext.Vcc) into the internal source voltage (int.Vcc) under the control of the comparator (200), and a low reference voltage generating circuit (400) for generating a control signal (64) to fully turn on the driver (90) when the voltage level of the external source voltage (ext.Vcc) is lower than the voltage level of the reference voltage (Vref), whereby the control signal (64) of said low reference voltage generating circuit (400) prevents the driver (90) from receiving the output signal (G1) of the comparator (200) so as to apply the external source voltage (ext.Vcc) to the memory elements of the memory device. <IMAGE>

Inventors

  • 👤 Young-Ho Suh
  • 👤 Suk-Bin Kim

Bibliographic Details

Application Number —
Jurisdiction EP
Data Source google_patents
Last Synchronized 2026-11-09 20:00
CPC Classifications
G; G11; G11C; G11C11/00; G11C11/21; G11C11/34; G11C11/40; G11C11/401; G11C11/4063; G11C11/407; G11C5/00; G11C5/14; G11C5/147

Claims Analysis

Total Claims: 6
Claim 1
Independent Claim 158 words
A circuit for generating upon receipt of a given external source voltage (ext.Vcc) an internal source voltage (int.Vcc) to be applied to memory elements of a semiconductor device, said circuit comprising: a first reference voltage generating means (100) for generating a reference voltage (Vref); comparing means (200) for comparing said internal source voltage (int.Vcc) with said reference voltage (Vref); and driving means (90) for driving the external source voltage (ext.Vcc) into said internal source voltage (int.Vcc) under control of said comparing means (200); characterised in that the circuit further comprises a control means (500) for generating a control signal (G4) to prevent said driving means (90) from receiving the output signal (G1) of said comparing means (200) and to fully turn on said driving means (90), when the level of said external source voltage (ext.Vcc) is lower than the level of said reference voltage (Vref), so as to apply said external source voltage (ext.Vcc) to said memory elements.
Claim 2
Dependent Claim 33 words
A circuit as defined in Claim 1, wherein the state of said control signal (G4) of said control means (500) is changed according to the voltage level of said external source voltage (ext.Vcc).
Claim 3
Dependent Claim 22 words
A circuit as defined in claim 1 or 2, wherein said control means (500) includes a second reference voltage generating means (400).
Claim 4
Dependent Claim 29 words
A circuit as defined in Claim 3, wherein said second reference voltage generating means (400) comprises at least a voltage comparator (201) and a voltage divider (P14, P15, R).
Claim 5
Dependent Claim 47 words
A circuit as defined in any of the preceding claims, further comprising means (300) for generating a burn-in voltage for preventing said driving means (90) from receiving the output of said comparing means (200) and for fully turning on said driving means (90) for a burn-in operation.
Claim 6
Dependent Claim 14 words
A semiconductor device provided with a circuit according to any of the preceding claims.

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