EP0553856A2
Expired / Lapsed
EP
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Semiconductor substrate and method for preparing same
Assignee: Canon Inc
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Filing: 1993-01-29
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Granted: —
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Expires: 2013-01-29
Abstract
Abstract A semiconductor substrate comprises an insulating layer and a compound semiconductor monocrystal thin film formed on said insulating layer, the thermal expansion coefficient of said insulating layer being in the range of 60%-140% of that of said monocrystal thin film.
Inventors
- 👤 Kiyofumi C/O Canon Kabushiki Kaisha Sakaguchi
- 👤 Takao C/O Canon Kabushiki Kaisha Yonehara
- 👤 Mamoru C/O Canon Kabushiki Kaisha Miyawaki
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-04 04:18
CPC Classifications
H; H10; H10F; H10F71/00; H10F71/139; H10P; H10P14/00; H10P14/20; H10P14/24; H10P14/29; H10P14/2901; H10P14/2902; H10P14/2905; H10P14/32; H10P14/3202; H10P14/3204; H10P14/3211; H10P14/3214; H10P14/3221; H10P14/3242; H10P14/3244; H10P14/3251; H10P14/3252; H10P14/34; H10P14/3402; H10P14/3414; H10P14/3421; H10P50/00; H10P50/60; H10P50/64; H10P50/642; H10P90/00; H10P90/19; H10P90/1904; H10P90/1906; H10P90/1914; H10P90/1922; H10W; H10W10/00; H10W10/10; H10W10/181; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y10; Y10S; Y10S438/00; Y10S438/96
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
41 words
A semiconductor substrate which comprises an insulating layer and a compound semiconductor monocrystal thin film formed on said insulating layer, the thermal expansion coefficient of said insulating layer being in the range of 60%-140% of that of said monocrystal thin film.
Claim 2
Independent Claim
106 words
A method for preparing a semiconductor substrate which comprises the steps of forming a monocrystal compound semiconductor thin film on a porous monocrystal semiconductor substrate via a semiconductor monocrystal thin film of the same kind material as said porous monocrystal, thereby preparing a first member, bonding a second member to said monocrystal compound semiconductor thin film of said first member via an insulating layer having a thermal expansion coefficient in the range of 60%-140% of the thermal expansion coefficient of said monocrystal compound semiconductor, and then removing said porous monocrystal and said monocrystal thin film of the same kind material as said porous monocrystal by etching.
Claim 3
Dependent Claim
22 words
The method for preparing a semiconductor substrate according to claim 2, wherein said monocrystal compound semiconductor is a III-V group compound semiconductor.
Claim 4
Independent Claim
134 words
A method for preparing a semiconductor substrate which comprises a step of porousifying a surface layer on at least the main surface side of a first Si substrate, a step of oxidizing the inside walls of the pores of the porous Si layer, a step of forming a monocrystal compound semiconductor layer on said porous Si layer, a step of bonding the surface of said monocrystal compound semiconductor layer to the main surface of a second substrate other than said first Si substrate, a first etching step of removing said first Si substrate by selective etching after said bonding step, and a second etching step of removing the exposed porous Si layer by selective etching with an etching solution having a high Si etching rate to said compound semiconductor after said first etching step.
Claim 5
Dependent Claim
19 words
The method for preparing a semiconductor substrate according to claim 4, wherein said second substrate comprises an Si substrate.
Claim 6
Dependent Claim
26 words
The method for preparing a semiconductor substrate according to claim 4, wherein said second substrate is an Si substrate on which an insulating layer is formed.
Claim 7
Dependent Claim
19 words
The method for preparing a semiconductor substrate according to claim 4, wherein said second substrate is a light-transmissive substrate.
Claim 8
Dependent Claim
43 words
The method for preparing a semiconductor substrate according to claim 4, wherein said oxidizing step of said porous Si layer is carried out by thermal oxidation, spontaneous oxidation in the atmosphere, oxidation in a washing step such as RCA, or a combination thereof.
References Cited (Backward Citations)
No citation records indexed.
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