EP0553852A2
Expired / Lapsed
EP
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Process for producing semiconductor substrate
Assignee: Canon Inc
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Filing: 1993-01-29
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Granted: —
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Expires: 2013-01-29
Abstract
Abstract A process for producing a semiconductor substrate comprises heat-treating a substrate having a monocrystal thereon in a reducing atmosphere.
Inventors
- 👤 Nobuhiko C/O Canon Kabushiki Kaisha Sato
- 👤 Takao C/O Canon Kabushiki Kaisha Yonehara
- 👤 Kiyofumi C/O Canon Kabushiki Kaisha Sakaguchi
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-01 10:48
CPC Classifications
C; C30; C30B; C30B29/00; C30B29/02; C30B29/06; C30B33/00; H; H10; H10F; H10F71/00; H10F71/139; H10P; H10P14/00; H10P14/20; H10P14/22; H10P14/24; H10P14/26; H10P14/265; H10P14/29; H10P14/2901; H10P14/2902; H10P14/2905; H10P14/2922; H10P14/2924; H10P14/2926; H10P14/32; H10P14/3202; H10P14/3204; H10P14/3211; H10P14/3242; H10P14/3256; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411; H10P14/3451; H10P14/3452; H10P14/3458; H10P14/36; H10P14/38; H10P14/3802; H10P50/00; H10P50/60; H10P50/64; H10P50/642; H10P90/00; H10P90/19; H10P90/1904; H10P90/1906; H10P90/1914; H10P90/1922; H10P90/1924; H10P95/00; H10P95/06; H10P95/90; H10P95/906; H10W; H10W10/00; H10W10/10; H10W10/181; Y; Y02; Y02E; Y02E10/00; Y02E10/50
Claims Analysis
Total Claims: 33
Claim 1
Independent Claim
19 words
A process for producing a semiconductor substrate, comprising heat-treating a substrate having a monocrystal thereon in a reducing atmosphere.
Claim 2
Dependent Claim
20 words
A process for producing a semiconductor substrate according to Claim 1, wherein the reducing atmosphere is an atmosphere containing hydrogen.
Claim 3
Dependent Claim
32 words
A process for producing a semiconductor substrate according to Claim 1 or Claim 2, wherein the heat treating in the reducing atmosphere is conducted at a pressure not higher than atmospheric pressure.
Claim 4
Dependent Claim
20 words
A process for producing a semiconductor substrate according to any of Claims 1 to 3, wherein the monocrystal is silicon.
Claim 5
Dependent Claim
79 words
A process for producing a semiconductor substrate, comprising the steps of porousifying a silicon base member, forming a nonporous monocrystalline silicon layer on the porous material to prepare a first substrate, heat-treating the first substrate at a temperature lower than the melting point of the nonporous monocrystalline silicon in a reducing atmosphere; bonding the surface of the nonporous monocrystalline silicon layer onto a second substrate with interposition of an insulating layer, and then removing the porous silicon by etching.
Claim 6
Dependent Claim
19 words
A process for producing a semiconductor substrate according to Claim 5, wherein the reducing atmosphere is a hydrogen atmosphere.
Claim 7
Dependent Claim
29 words
A process for producing a semiconductor substrate according to Claim 5, wherein the heat treating in the reducing atmosphere is conducted at a pressure not higher than atmospheric pressure.
Claim 8
Dependent Claim
39 words
A process for producing a semiconductor substrate according to Claims 5, wherein the first substrate is formed through the step of porousifying a silicon base member, and the step of forming a monocrystalline silicon layer on the porous silicon.
Claim 9
Dependent Claim
20 words
A process for producing a semiconductor substrate according to Claims 5, wherein the insulating layer is a silicon oxide layer.
Claim 10
Dependent Claim
24 words
A process for producing a semiconductor substrate according to Claims 5, wherein the porous silicon is selectively removed by etching with an HF-containing solution.
Claim 11
Dependent Claim
31 words
A process for producing a semiconductor substrate according to Claims 5, wherein the monocrystalline silicon layer formed on the porous silicon substrate has a thickness of not more than 20 µm.
Claim 12
Dependent Claim
19 words
A process for producing a semiconductor substrate according to Claims 5, wherein the second substrate is a silicon substrate.
Claim 13
Dependent Claim
19 words
A process for producing a semiconductor substrate according to Claims 5, wherein the second substrate is a light-transmissive substrate.
Claim 14
Dependent Claim
23 words
A process for producing a semiconductor substrate according to Claims 5, wherein the step of the bonding includes operation in an oxygen-containing atmosphere.
Claim 15
Dependent Claim
23 words
A process for producing a semiconductor substrate according to Claims 5, wherein the step of the bonding includes operation in a nitrogen-containing atmosphere.
Claim 16
Dependent Claim
77 words
A process for producing a semiconductor substrate, comprising the steps of porousifying a silicon base member, forming a nonporous monocrystalline silicon layer on the porous material to prepare a first substrate, bonding the surface of the nonporous monocrystalline silicon onto a second substrate with interposition of an insulating layer, removing the porous silicon by etching, and heat-treating the bonded substrates at a temperature lower than the melting point of the nonporous monocrystalline silicon in a reducing atmosphere.
Claim 17
Dependent Claim
19 words
A process for producing a semiconductor substrate according to Claim 16, wherein the reducing atmosphere is a hydrogen atmosphere.
Claim 18
Dependent Claim
29 words
A process for producing a semiconductor substrate according to Claim 16, wherein the heat treating in the reducing atmosphere is conducted at a pressure not higher than atmospheric pressure.
Claim 19
Dependent Claim
39 words
A process for producing a semiconductor substrate according to Claims 16, wherein the first substrate is formed through the step of porousifying a silicon base member, and the step of forming a monocrystalline silicon layer on the porous material.
Claim 20
Dependent Claim
20 words
A process for producing a semiconductor substrate according to Claims 16, wherein the insulating layer is a silicon oxide layer.
Claim 21
Dependent Claim
22 words
A process for producing a semiconductor substrate according to Claims 16, wherein the porous silicon is selectively etched with an HF-containing solution.
Claim 22
Dependent Claim
31 words
A process for producing a semiconductor substrate according to Claims 16, wherein the monocrystalline silicon layer formed on the porous silicon substrate has a thickness of not more than 20 µm.
Claim 23
Dependent Claim
19 words
A process for producing a semiconductor substrate according to Claims 16, wherein the second substrate is a silicon substrate.
Claim 24
Dependent Claim
19 words
A process for producing a semiconductor substrate according to Claims 16, wherein the second substrate is a light-transmissive substrate.
Claim 25
Dependent Claim
23 words
A process for producing a semiconductor substrate according to Claims 16, wherein the step of the bonding includes operation in an oxygen-containing atmosphere.
Claim 26
Dependent Claim
23 words
A process for producing a semiconductor substrate according to Claims 16, wherein the step of the bonding includes operation in a nitrogen-containing atmosphere.
Claim 27
Dependent Claim
22 words
A process for producing a semiconductor substrate according to Claims 16, wherein the nonporous monocrystalline silicon layer is formed through epitaxial growth.
Claim 28
Dependent Claim
77 words
A process for producing a semiconductor substrate, comprising the steps of porousifying a silicon substrate, heat-treating the porousified silicon substrate at a temperature lower than the melting point thereof in a reducing atmosphere to change the surface layer of the porousified silicon substrate into a nonporous monocrystalline silicon layer; bonding the nonporous monocrystalline silicon layer onto the surface comprising an insulating material of a second substrate, and removing the porousified portion of the silicon substrate by etching.
Claim 29
Dependent Claim
35 words
A process for producing a semiconductor substrate according to Claim 28, further comprising, subsequent to the etching step, a step of growing a monocrystalline silicon layer though epitaxial growth from the nonporous monocrystalline silicon layer.
Claim 30
Dependent Claim
23 words
A process for producing a semiconductor substrate according to Claim 28, wherein the silicon substrate to be made porous is of a P-type.
Claim 31
Dependent Claim
23 words
A process for producing a semiconductor substrate according to Claims 28, wherein the step of the bonding includes operation in an oxygen-containing atmosphere.
Claim 32
Dependent Claim
23 words
A process for producing a semiconductor substrate according to Claims 28, wherein the step of the bonding includes operation in a nitrogen-containing atmosphere.
Claim 33
Dependent Claim
20 words
A process for producing a semiconductor substrate according to Claim 28, wherein the reducing atmosphere is an atmosphere containing hydrogen.
References Cited (Backward Citations)
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