EP0551117A2
Expired / Lapsed
EP
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Large scale integrated circuit device and thin film forming method and apparatus for the same
Assignee: Mitsubishi Electric Corp
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Filing: 1993-01-07
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Granted: —
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Expires: 2013-01-07
Abstract
Abstract An integrated circuit device includes a barrier layer (161) as an underlying layer for a wiring conductor layer. The barrier layer is formed of titanium oxide-titanium nitride or titanium nitride or composite layers of titanium, 2-titanium nitride and titanium nitride. The barrier layer (161) may contains oxygen or carbon. A method of manufacturing an integrated circuit device includes steps of introducing a gas to the vicinity of a substrate disposed within a vacuum chamber, and forming a titanium oxide-titanium nitride thin film or titanium nitride film or the composite film by depositing titanium in vapor phase by using a cluster-type ion source while irradiating the substrate with nitrogen ions. A thin film forming apparatus comprises a cluster type ion source and a gas ion source. The cluster type ion source includes a vacuum chamber (41) maintained at a predetermined vacuum level a substrate (67) disposed within the vacuum chamber (41), a gas introducing pipe (46) for introducing gas to the vicinity of the substrate (67), a vapor generating source for ejecting a vapor of a material for deposition toward the substrate and producing vapor or cluster (66) of the material, an ionizing electrode (61) for ionizing a part of the vapor or cluster (66), and an accelerating electrode (65) for accelerating controllably the ionized vapors or ionized clusters (66) to thereby transport them to the substrate (67) together with vapors or clusters of the material which are not ionized. The gas ion source includes a nitrogen gas introducing pipe (46) disposed within the vacuum chamber, a gas ionizing electrode for ionizing a nitrogen gas, and an accelerating electrode (65) for accelerating controllably nitrogen ions resulting from ionization by the gas ionizing electrode (61). Fine contact holes having a high aspect ratio can satisfactorily be coated with a wiring conductor film.
Inventors
- 👤 Hiroki c/o Mitsubishi Denki K.K. Ito
- 👤 Hisao c/o Mitsubishi Denki K.K. Yoshida
- 👤 Teruo c/o Mitsubishi Denki K.K. Ina
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-30 04:33
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/032; H10W20/047; H10W20/049; C; C23; C23C; C23C14/00; C23C14/06; C23C14/0641; C23C14/0676; C23C14/22; C23C14/221; H10P; H10P14/00; H10P14/40; H10P14/42; H10P14/44; H10W20/033; H10W20/035; H10W20/056; H10W20/40; H10W20/41; H10W20/425; Y; Y10; Y10S; Y10S257/00; Y10S257/915
Claims Analysis
Total Claims: 33
Claim 1
Independent Claim
31 words
An integrated circuit device, comprising: a barrier layer as an underlying layer for a wiring conductor layer, wherein said barrier layer is formed of a titanium oxide-titanium nitride (TiON) thin film.
Claim 2
Independent Claim
55 words
A method of manufacturing an integrated circuit device, comprising the steps of: introducing an oxygen gas to the vicinity of a substrate disposed within a vacuum chamber; and forming a titanium oxide-titanium nitride (TiON) thin film by depositing titanium in vapor phase by using a cluster-type ion source while irradiating said substrate with nitrogen ions.
Claim 3
Independent Claim
64 words
A method of manufacturing an integrated circuit device, comprising the steps of: introducing a mixture gas containing an oxygen gas and a nitrogen gas to the vicinity of a substrate disposed in a vacuum chamber; and forming a titanium oxide-titanium nitride (TiON) thin film by depositing titanium (Ti) in vapor phase by using a cluster-type ion source while irradiating said substrate with argon ions.
Claim 4
Independent Claim
62 words
A method of manufacturing an integrated circuit device, comprising the steps of: introducing a mixture gas containing oxygen elements and nitrogen elements to the vicinity of a substrate disposed in a vacuum chamber; and forming a titanium oxide-titanium nitride (TiON) thin film by depositing titanium (Ti) in vapor phase by using a cluster-type ion source while irradiating said substrate with argon ions.
Claim 5
Dependent Claim
206 words
A thin film forming apparatus for an integrated circuit device, comprising: a cluster type ion source and a gas ion source, wherein said cluster type ion source includes: a vacuum chamber maintained at a predetermined vacuum level; a substrate disposed within said vacuum chamber; a gas introducing pipe for introducing an oxygen gas to the vicinity of said substrate; a vapor generating source for ejecting a vapor of a material for deposition toward said substrate and producing vapor or cluster of said material; ionizing means for ionizing a part of said vapor or cluster of the material for vapor deposition; and accelerating means for accelerating controllably the ionized vapor or ionized cluster to thereby transport said ionized vapor or ionized cluster to said substrate together with vapor or cluster of the material for vapor deposition which is not ionized; and wherein said gas ion source includes: a nitrogen gas introducing pipe disposed within said vacuum chamber; gas ionizing means for ionizing a nitrogen gas, said gas ionizing means including an electron beam drawing electrode and electron beam emitting means disposed at a location to which the nitrogen gas is introduced; and accelerating means for accelerating controllably nitrogen ions resulting from ionization by said gas ionizing means.
Claim 6
Dependent Claim
223 words
A thin film forming apparatus for an integrated circuit device, comprising a cluster type ion source and a gas ion source, wherein said cluster type ion source includes: a vacuum chamber maintained at a predetermined vacuum level; a substrate disposed within said vacuum chamber; a gas introducing pipe for introducing a mixture gas containing oxygen gas and nitrogen gas or a mixture gas containing oxygen elements and nitrogen elements gas to the vicinity of said substrate; a vapor generating source for ejecting a vapor of material for vapor deposition toward said substrate and generating vapor or cluster of said material, ionizing means for ionizing a part of said vapor or cluster of the material for vapor deposition; and accelerating means for accelerating controllably the ionized vapor or ionized cluster to thereby transport said ionized vapor or ionized cluster to said substrate together with vapor or cluster of the material for vapor deposition which is not ionized; and wherein said gas ion source includes: an argon gas introducing pipe disposed within said vacuum chamber; gas ionizing means for ionizing said argon gas, said gas ionizing means including an electron beam drawing electrode and electron beam emitting means disposed at a location to which the argon gas is introduced; and accelerating means for accelerating controllably argon ions resulting from ionization by said gas ionizing means.
Claim 7
Dependent Claim
50 words
An integrated circuit device, comprising: a wiring conductor layer formed on a substrate with a barrier layer being interposed therebetween; wherein said barrier layer is constituted by a thin film of titanium nitride (TiN x ) whose composition varies in the direction toward said wiring conductor layer from said substrate.
Claim 8
Dependent Claim
57 words
An integrated circuit device, comprising: a wiring conductor layer formed on a substrate with a barrier layer being interposed therebetween; wherein said barrier layer is constituted by a sub-layer of titanium, a sub-layer of 2-titanium nitride and a sub-layer of titanium nitride stacked in this sequence in the direction toward said wiring conductor layer from said substrate.
Claim 9
Dependent Claim
74 words
An integrated circuit device, comprising: a wiring conductor layer formed on a substrate with a barrier layer being interposed therebetween; wherein said barrier layer is constituted by a sub-layer of titanium, sub-layer of titanium nitride (TiN x ) in which contents of nitrogen increases progressively relative to content of titanium, and a sub-layer of titanium nitride (TiN x ) stacked in this sequence in the direction toward said wiring conductor layer from said substrate.
Claim 10
Independent Claim
103 words
A method of manufacturing an integrated circuit device having a wiring conductor layer formed on a substrate with a barrier layer being interposed therebetween, comprising the steps of: introducing a nitrogen gas to the vicinity of said substrate disposed within a vacuum chamber; irradiating said substrate with titanium ions generated from a cluster-type titanium ion source to thereby deposit titanium on said substrate; and forming said barrier layer of a thin film of titanium nitride (TiN x ) whose composition (x) changes progressively by controlling correspondingly the amount of the nitrogen gas introduced to the vicinity of said substrate within said vacuum chamber.
Claim 11
Independent Claim
120 words
A method of manufacturing an integrated circuit device having a wiring conductor layer formed on a substrate with a barrier layer being interposed therebetween, comprising the steps of: introducing a gas mixture containing a nitrogen gas or a gas mixture containing nitrogen element to the vicinity of the substrate disposed within a vacuum chamber; irradiating said substrate with titanium ions generated from a cluster-type ion source while irradiating said substrate with inactive gas ions to thereby deposit titanium on said substrate; and forming said barrier layer by a thin film of titanium nitride (TiN x ) whose composition (x) changes, by correspondingly controlling an amount of said gas mixture introduced to the vicinity of said substrate within said vacuum chamber.
Claim 12
Dependent Claim
126 words
A thin film forming apparatus for an integrated circuit device comprising: a vacuum chamber maintained at a predetermined vacuum level; a substrate disposed within said vacuum chamber; a gas introducing pipe for introducing a control flow of a nitrogen gas to the vicinity of said substrate; a vapor generating source for ejecting a vapor or cluster of a material for deposition toward said substrate and producing vapor or cluster of said material; ionizing means for ionizing a part of said vapor or cluster of the material for deposition; and accelerating means for accelerating controllably the ionized vapor or ionized cluster to thereby transport said ionized vapor or ionized cluster to said substrate together with vapor or cluster of the material for deposition which is not ionized.
Claim 13
Dependent Claim
213 words
A thin film forming apparatus for an integrated circuit device comprising: a cluster type ion source and a gas ion source, wherein said cluster type ion source includes: a vacuum chamber maintained at a predetermined vacuum level; a substrate disposed within said vacuum chamber; a gas introducing pipe for introducing a controlled flow of a gas mixture containing a nitrogen gas or nitrogen element to the vicinity of said substrate; a vapor generating source for ejecting a vapor of a material for deposition toward said substrate and producing vapor or cluster of said material; ionizing means for ionizing a part of said vapor or cluster of the material for deposition; and accelerating means for accelerating controllably the ionized vapor or cluster ions to thereby transport said ionized vapor or cluster ions to said substrate together with vapor or cluster of said material which is not ionized; and wherein said gas ion source includes: an inactive gas introducing pipe disposed within said vacuum chamber; gas ionizing means for ionizing the inactive gas, said gas ionizing means including an electron beam drawing electrode and electron beam emitting means disposed at a location to which said inactive gas is introduced; and accelerating means for accelerating controllably inactive ions resulting from ionization by said gas ionizing means.
Claim 14
Dependent Claim
34 words
An integrated circuit device having a wiring conduct or layer formed on a substrate with a barrier layer being interposed therebetween, wherein said barrier layer is formed of titanium nitride containing oxygen and carbon.
Claim 15
Dependent Claim
32 words
An integrated circuit device having a wiring conduct or layer formed on a substrate with a barrier layer being interposed therebetween, wherein said barrier layer is formed of titanium nitride containing carbon.
Claim 16
Dependent Claim
29 words
A semiconductor circuit device according to claim 14, wherein an adhesion layer formed of titanium and containing oxygen and carbon is provided as a layer underlying said barrier layer.
Claim 17
Dependent Claim
29 words
A semiconductor circuit device according to claim 15, wherein an adhesion layer formed of titanium and containing oxygen and carbon is provided as a layer underlying said barrier layer.
Claim 18
Dependent Claim
21 words
A semiconductor circuit device according to claim 16, wherein said adhesion layer is formed of titanium and contains carbon or oxygen.
Claim 19
Dependent Claim
63 words
An integrated circuit device, comprising a wiring conductor layer formed in a contact hole and/or a through-hole, a barrier layer formed as an underlying layer for said wiring conductor layer, and a buffer layer of a metal formed between said barrier layer and said wiring conductor layer, said metal being easy to form an alloy with a material of said wiring conductor layer.
Claim 20
Dependent Claim
75 words
An integrated circuit device, comprising: a wiring conductor layer of aluminum or an aluminum alloy formed in a contact hole and/or a through-hole; a barrier layer of titanium nitride formed as a layer underlying said wiring conductor layer; and a buffer layer of a metal easy such as titanium, silicon, germanium or the like which is easy to alloy with aluminum, said buffer layer being interposed between said wiring conductor layer and said barrier layer.
Claim 21
Dependent Claim
72 words
An integrated circuit device, comprising: a wiring conductor layer of aluminum or an aluminum alloy formed in a contact hole and/or a through-hole; a barrier layer of titanium nitride formed as a layer underlying said wiring conductor layer; and a buffer layer of an alloy of aluminum with a metal such as titanium, silicon, germanium or the like, said buffer layer being interposed between said wiring conductor layer and said barrier layer.
Claim 22
Dependent Claim
97 words
An integrated circuit device, comprising: a wiring conductor layer of aluminum or an aluminum alloy formed in a contact hole and/or a through-hole; a barrier layer of titanium nitride formed as a layer underlying said wiring conductor layer; and a buffer layer of an alloy of aluminum with a metal such as titanium, silicon, germanium or the like, said buffer layer being interposed between said wiring conductor layer and said barrier layer and having such composition that content of said metal decreases progressively relative to the content of aluminum in the direction toward said wiring conductor layer.
Claim 23
Dependent Claim
44 words
An integrated circuit, comprising a wiring conductor layer formed on a substrate with a barrier layer being interposed therebetween or an adhesion layer adhered to other component layer, said barrier layer or said adhesion layer being formed of titanium nitride containing oxygen and carbon.
Claim 24
Dependent Claim
42 words
An integrated circuit, comprising a wiring conductor layer formed on a substrate with a barrier layer being interposed therebetween or an adhesion layer adhered to other component layer, said barrier layer or said adhesion layer being formed of titanium nitride containing carbon.
Claim 25
Independent Claim
56 words
A method of forming a wiring conductor film for a semiconductor device by using a physical evaporation apparatus for depositing a conductor material in the form of a layer on a substrate disposed within a vacuum chamber of a high vacuum level, wherein a rare gas is introduced into said vacuum chamber at a desired pressure.
Claim 26
Dependent Claim
31 words
A wiring conductor film forming method according to claim 25, wherein gas pressure of said rare gas is in a range of about 10⁻⁶ Torr to about 2 × 10⁻⁴ Torr.
Claim 27
Independent Claim
60 words
A method of forming a wiring conductor film for a semiconductor device by using a physical evaporation apparatus for depositing a conductor material in the form of a layer on a substrate disposed within a vacuum chamber of a high vacuum level, wherein deposition of said conductor layer is carried out at a desired vacuum level higher than 10⁻⁶ Torr.
Claim 28
Independent Claim
106 words
An apparatus for forming a wiring conductor film on a semiconductor device, comprising: a vacuum chamber within which a substrate is disposed; a vapor generating source disposed in opposition to said substrate; ionizing means disposed between said vapors generating source and said substrate for ionizing vapor generated by said vapor generating source; accelerating means for imparting kinetic energy to the vapor ionized by said ionizing means to thereby accelerate said ionized vapor in the form of a vapor beam toward said substrate; means for introducing a rare gas into said vacuum chamber; and gas pressure control means for controlling a gas pressure of said rare gas.
Claim 29
Dependent Claim
33 words
An apparatus for forming a wiring conductor layer on a semiconductor device according to claim 28, further comprising: position moving means for moving said vapor beam and said substrate relative to each other.
Claim 30
Independent Claim
117 words
An apparatus for forming a wiring conductor film on a semiconductor device, comprising: a vacuum chamber within which a substrate is disposed; a vapor generating source disposed in opposition to said substrate; ionizing means disposed between said vapors generating source and said substrate for ionizing vapor generated by said vapor generating source; accelerating means for imparting kinetic energy to the vapor ionized by said ionizing means to thereby accelerate said ionized vapor in the form of a vapor beam toward said substrate; vacuum level control means for controlling a vacuum level within said vacuum chamber to be higher than 10⁻⁶ Torr; and position moving means for moving said vapor beam and said substrate relative to each other.
Claim 31
Dependent Claim
75 words
A film forming apparatus, comprising: a spot vaporization source having a point-like region from which vapor or ions of a material for forming a film is ejected; and means for depositing said ejected material on a substrate to thereby form said film; wherein said spot vaporization source is disposed directly below an outer peripheral portion of said substrate or at a position radially externally of said outer peripheral portion; and means for rotating said substrate.
Claim 32
Dependent Claim
94 words
A film forming apparatus, comprising: a spot vaporization source having a point-like region from which vapor or ions of a material for forming a film is ejected; and means for depositing said ejected material on a substrate to thereby form said film; wherein said spot vaporization source is disposed directly below an outer peripheral portion of said substrate or at a position radially externally of said outer peripheral portion; and means for revolving said spot vaporization source along a circular path having a center at an axis extending through a center of said substrate.
Claim 33
Dependent Claim
54 words
A film forming apparatus according to claim 1, wherein when said substrate and said spot vaporization source are disposed with a distance therebetween which is shorter than a predetermined distance, a spot vaporization source is additionally provided below said substrate at a position lying radially inwardly relative to the outer periphery of said substrate.
References Cited (Backward Citations)
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