EP0543616A2
Expired / Lapsed
EP
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A capacitor and method for making a capacitor
Assignee: Samsung Electronics Co Ltd
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Filing: 1992-11-17
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Granted: —
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Expires: 2012-11-17
Abstract
Abstract The present invention provides a semiconductor device having a capacitor that is formed through: a first step of forming a polysilicon layer (23) having a rough surface after a nonconductive layer (22) is applied to a base substrate (21); a second step of etching back away the polysilicon layer (23) to expose the nonconductive layer (22) and thus remaining islandlike polysilicon layers (24); a third step of etching the nonconductive layer (22), using the remained polysilicon layers (24) as an etching mask; a fourth step of etching the base substrate (21) of the capacitor, using the nonconductive layer (22) as a mask; a fifth step of forming a pattern (37) of the base substrate of the capacitor after the removal of the remained nonconductive layer (22); a sixth step of forming an upper substrate (39) of the capacitor after the formation of a dielectric film (38) of the capacitor.
Inventors
- 👤 Jaehong Ko
- 👤 Sungtae Kim
- 👤 Hyunbo Shin
- 👤 Seonghun Kang
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-30 11:09
CPC Classifications
H; H10; H10B; H10B12/00; H10B12/01; H10B12/02; H10B12/03; H10B12/033; H10B12/30; H10B12/31; H10B12/318; H10D; H10D1/00; H10D1/01; H10D1/041; H10D1/043; H10D1/60; H10D1/62; H10D1/66; H10D1/68; H10D1/692; H10D1/711; H10D1/714; H10D1/716
Claims Analysis
Total Claims: 26
Claim 1
Independent Claim
121 words
In a semiconductor device having an access transistor and a capacitor formed on a semiconductor substrate, a method for making said capacitor comprising the steps of: forming a first conductive layer, a nonconductive layer and a polysilicon layer having a rough surface in serial order; etching back away said polysilicon having a rough surface; etching said nonconductive layer, using islandlike polysilicons formed by said etch back process as an etching mask; etching said first conductive layer to a predetermined depth, using said nonconductive layer as an etching mask; removing said nonconductive layer used as a mask; forming a dielectric film on said first conductive layer having a plurality of trenchlike sections; and forming a second conductive layer on said dielectric film.
Claim 2
Dependent Claim
26 words
The method as set forth in Claim 1, wherein said first conductive layer is selected from among polysilicon, amorphous silicon, refractory metal or refractory metal silicide.
Claim 3
Dependent Claim
25 words
The method as set forth in Claim 1, wherein said polysilicon layer having a rough surface is formed at temperatures ranging from 540°C to 600°C.
Claim 4
Dependent Claim
23 words
The method as set forth in Claim 1, wherein said nonconductive layer is formed to a thickness of between 100 and 500 angstroms.
Claim 5
Dependent Claim
24 words
The method as set forth in Claim 1, wherein said polysilicon layer, nonconductive layer and first conductive layer are respectively etched through anisotropic etching.
Claim 6
Dependent Claim
25 words
The method as set forth in Claim 5, wherein the etch process is carried out not to expose the bottom of said first conductive layer.
Claim 7
Independent Claim
108 words
A method for making a capacitor comprising the steps of: forming and patterning a first conductive layer, forming a first oxide film thereon, and then forming a silicon nitride film thereon; forming a second oxide film by oxidizing said silicon nitride film; etching a second oxide film to expose said silicon nitride film; forming a plurality of microscopic trenches by etching said first oxide film and first conductive layer, using as a mask the silicon nitride exposed after the etching; removing said oxide film and silicon nitride film; and forming a dielectric film along the surface of said first conductive layer and forming a second conductive layer thereon.
Claim 8
Dependent Claim
21 words
The method as set forth in Claim 7, wherein said first conductive layer has a thickness of 2000 to 4000 angstroms.
Claim 9
Dependent Claim
21 words
The method as set forth in Claim 7, wherein said silicon nitride film has a thickness of 30 to 500 angstroms.
Claim 10
Dependent Claim
21 words
The method as set forth in Claim 7, wherein said first conductive layer is etched through anisotropic etching or isotropic etching.
Claim 11
Dependent Claim
27 words
The method as set forth in Claim 7, wherein said second conductive layer is formed of polysilicon doped with impurities or single crystalline silicon doped with impurities.
Claim 12
Dependent Claim
44 words
A capacitor comprising a first conductive layer having rough side walls and grooves of a plurality of trenchlike sections on its surface, a dielectric film formed along the surface of said first conductive layer, and a second conductive layer formed on the dielectric film.
Claim 13
Dependent Claim
27 words
The capacitor as set forth in Claim 12, wherein said first conductive layer is formed of polysilicon doped with impurities or single crystalline silicon doped with impurities.
Claim 14
Dependent Claim
33 words
The capacitor as set forth in Claim 12, wherein said second conductive layer is formed of polysilicon doped with impurities or single crystalline silicon doped with impurities, refractory metal or refractory metal silicide.
Claim 15
Dependent Claim
34 words
The capacitor as set forth in Claim 12, wherein said dielectric film is formed of three layers comprising of oxide, nitride and oxide film, two layers comprising of nitride and oxide film, or Ta₂O₅.
Claim 16
Independent Claim
117 words
A method for making a capacitor comprising the steps of: forming a first conductive layer, forming a first oxide film thereon, and then etching the first oxide film to form a predetermined pattern; forming a polysilicon layer having a rough surface on the whole surface and forming a second oxide film; etching the first oxide film to expose the first conductive layer, using the polysilicon layer having a rough surface as a mask; etching the first conductive layer to a predetermined depth, using the first oxide film partially remained, as a mask; removing said first oxide film; and forming a dielectric film along the surface of the first conductive layer and forming a second conductive layer thereon.
Claim 17
Dependent Claim
18 words
The method as set forth in Claim 16, wherein said second oxide film is etched through anisotropic etching.
Claim 18
Dependent Claim
29 words
The method as set forth in Claim 16, wherein said first oxide film is etched through anisotropic etching, using as a mask said polysilicon layer having a rough surface.
Claim 19
Independent Claim
33 words
The method as set forth in any one of Claims 1, 7 or 16, wherein said first conductive layer is formed of polysilicon doped with impurities or single crystalline silicon doped with impurities.
Claim 20
Dependent Claim
21 words
The method as set forth in Claim 16, wherein said first conductive layer has a thickness of 2000 to 10000 angstroms.
Claim 21
Dependent Claim
24 words
The method as set forth in Claim 7 or Claim 16, wherein said first oxide film has a thickness of 50 to 2000 angstroms.
Claim 22
Dependent Claim
20 words
The method as set forth in claim 16, wherein said polysilicon film has a thickness of 50 to 1000 angstroms.
Claim 23
Dependent Claim
18 words
The method as set forth in Claim 16, wherein said first conductive layer is etched through anisotropic etching.
Claim 24
Dependent Claim
17 words
The method as set forth in Claim 16, wherein said oxide film is etched through wet etching.
Claim 25
Independent Claim
33 words
The method as set forth in any one of Claims 1, 7 or 16, wherein said second conductive layer is selected from among polysilicon, in-situ doped polysilicon, refractory metal or refractory metal silicide.
Claim 26
Independent Claim
40 words
The method as set forth in any one of Claims 1, 7 and 16, wherein said dielectric film is formed of three layers comprising of oxide, nitride and oxide film, two layers comprising of nitride and oxide film, or Ta₂0₅.
References Cited (Backward Citations)
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