EP0539095A2
Expired / Lapsed
EP
⏱️ 0.0 years remaining
Semiconductor device having radiator structure and method of producing the same
Assignee: Fujitsu Ltd
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Filing: 1992-10-15
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Granted: —
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Expires: 2012-10-15
Abstract
Abstract A semiconductor device (1B) is provided with a lead frame (2) having an opening (11) at a central part thereof and a plurality of leads which are respectively made up of an inner lead (2a) and an outer lead (2b), a radiator block (3) provided under the opening (11) of the lead frame (2) and having a top surface part and a bottom part, where a gap is formed between the top surface part of the radiator block (3) and the lead frame (2), a semiconductor chip (5) mounted on the top surface part of the radiator block (3), a plurality of wires (6) bonding the semiconductor chip (5) and the leads, and a package (7) which encapsulates at least a part of the radiator block (3), the semiconductor chip (5), the wires (6) and the inner leads (2a) of the leads so that the outer leads (2b) extend outwardly of the package (7). The package (7) fills the gap between the top surface part of the radiator block (3) and the lead frame (2), and the bottom part of the radiator block (3) projects from the package (7) by a predetermined length to conduct heat generated from the semiconductor chip (5) outside the package (7).
Inventors
- 👤 Michio c/o Fujitsu Limited Sono
- 👤 Kouji c/o Fujitsu Limited Saito
- 👤 Masashi C/O Fujitsu Limited Takenaka
- 👤 Masanori c/o Fujitsu Limited Yoshimoto
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-07 15:28
CPC Classifications
H; H10; H10W; H10W74/00; H10W74/01; H10W74/016; H05; H05K; H05K1/00; H05K1/02; H05K1/0201; H05K1/0203; H05K1/0204; H05K1/0206; H10W40/00; H10W40/70; H10W40/77; H10W40/778; H05K2201/00; H05K2201/02; H05K2201/0203; H05K2201/0206; H05K2201/0209; H05K2201/03; H05K2201/0332; H05K2201/0364; H05K2201/0376; H05K2201/10; H05K2201/10613; H05K2201/10621; H05K2201/10689; H05K2201/10954; H05K2201/10969; H05K3/00; H05K3/30; H05K3/303; H05K3/305; H10H; H10H20/00; H10H20/80; H10H20/85; H10H20/8506; H10H20/858; H10H20/8582; H10W90/00; H10W90/701; H10W90/731; H10W90/737; H10W90/751; H10W90/756; Y; Y10; Y10T; Y10T29/00; Y10T29/49; Y10T29/49002; Y10T29/49117; Y10T29/49121
Claims Analysis
Total Claims: 21
Claim 1
Independent Claim
241 words
A method of producing a semiconductor device characterized by the steps of: (a) fitting a bottom part of a radiator block (3) within a tapered hole (22) which is provided at a bottom of a recess (21a) of a jig (21); (b) positioning on the jig (21) a lead frame (2) which has an opening (11) at a central part thereof, said opening being located above a top surface part of the radiator block (3); (c) mounting a semiconductor chip (5) on the top surface part of the radiator block (3) and bonding the semiconductor chip (5) to the lead frame (2) by a plurality of wires (6); (d) positioning at least the radiator block (3) on a lower metal die (24b); and (e) positioning an upper metal die (24a) on top of the lower metal die (24b) and injecting a resin into a cavity (26) which is formed inside the upper and lower metal dies (24a, 24b) so as to mold the resin and form a package (7) which encapsulates at least a part of the radiator block (3), the semiconductor chip (5), the wires (6) and inner leads (2a) of the lead frame (2) so that outer leads (2b) of the lead frame (2) extend outwardly of the package (7), the bottom part of the radiator block (3) projecting from the package (7) by a predetermined length to conduct heat generated from the semiconductor chip (5) outside the package.
Claim 2
Dependent Claim
33 words
The method of producing the semiconductor device as claimed in claim 1, characterized in that said step (a) uses a radiator block (3) which has an approximate inverted trapezoidal shape in cross section.
Claim 3
Dependent Claim
46 words
The method of producing the semiconductor device as claimed in claim 1 or 2, characterized in that said step (a) uses a radiator block (3) which is made of a material having a thermal conductivity greater than that of the resin which forms the package (7).
Claim 4
Dependent Claim
40 words
The method of producing the semiconductor device as claimed in claim 3, characterized in that said step (a) uses a radiator block (3) which is made of a material selected from a group consisting of metals and non-metals including ceramics.
Claim 5
Independent Claim
107 words
The method of producing the semiconductor device as claimed in any of claims 1 to 4, characterized in that there is further provided the step (f) of forming the outer leads (2b) to an approximate S-shape so that each of the outer leads (2b) have a vertical length L1 from a bottom surface of the package (7) towards a direction in which the radiator block (3) projects, said step (a) uses a jig (21) which is shaped so that the bottom part of the radiator block (3) projects a length L2 from the bottom surface of the package (7) after said step (e), and L1 > L2.
Claim 6
Independent Claim
40 words
The method of producing the semiconductor device as claimed in any of claims 1 to 5, characterized in that said step (a) uses a radiator block (3) which includes a plurality of slits (31) formed at the bottom part thereof.
Claim 7
Independent Claim
44 words
The method of producing the semiconductor device as claimed in any of claims 1 to 5, characterized in that said step (a) uses a radiator block (3) which includes engaging means (32) provided at the bottom part thereof for engaging an external radiator member.
Claim 8
Independent Claim
45 words
The method of producing the semiconductor device as claimed in any of claims 1 to 5, characterized in that said step (a) uses a radiator block (3) which has the top surface part (33) and the bottom part (34) thereof made of mutually different metals.
Claim 9
Independent Claim
49 words
The method of producing the semiconductor device as claimed in any of claims 1 to 5, characterized in that said step (a) uses a radiator block (3) which has the top surface part made up of a metal layer (35) and the bottom part made of a ceramic material.
Claim 10
Independent Claim
48 words
The method of producing the semiconductor device as claimed in any of claims 1 to 9, characterized in that said step (b) position the lead frame (2) on the jig (21) by fitting positioning pins (23) of the jig (21) into corresponding holes of the lead frame (2).
Claim 11
Independent Claim
70 words
The method of producing the semiconductor device as claimed in any of claims 1 to 10, characterized in that said step (d) positions the radiator block (3) and the package (7) by placing the bottom part of the radiator block (3) at a passage (25) of the lower metal die (24b) so that the radiator block (3) and the package (7) are positioned under vacuum suction via the passage (25).
Claim 12
Dependent Claim
192 words
A semiconductor device comprising a lead frame (2) having an opening (11) at a central part thereof and a plurality of leads which are respectively made up of an inner lead (2a) and an outer lead (2b), characterized in that there are provided: a radiator block (3) provided under the opening (11) of said lead frame (2), said radiator block having a top surface part and a bottom part, a gap being formed between the top surface part of said radiator block and said lead frame; a semiconductor chip (5) mounted on the top surface part of said radiator block; a plurality of wires (6) bonding said semiconductor chip and the leads; and a package (7) which encapsulates at least a part of said radiator block, said semiconductor chip, the wires and the inner leads of the leads so that the outer leads extend outwardly of said package, said package filling the gap between the top surface part of said radiator block and said lead frame, said bottom part of said radiator block projecting from said package by a predetermined length to conduct heat generated from said semiconductor chip outside said package.
Claim 13
Dependent Claim
29 words
The semiconductor device as claimed in claim 12, characterized in that said radiator block (3) has a tapered shape which gradually decreases in size towards the bottom part thereof.
Claim 14
Dependent Claim
24 words
The semiconductor device as claimed in claim 13, characterized in that said radiator block (3) has an approximate inverted trapezoidal shape in cross section.
Claim 15
Dependent Claim
43 words
The semiconductor device as claimed in any of claims 12 to 14, characterized in that said package (7) is made of a resin, and said radiator block (3) is made of a material having a thermal conductivity greater than that of the resin.
Claim 16
Dependent Claim
31 words
The semiconductor device as claimed in claim 15, characterized in that said radiator block (3) is made of a material selected from a group consisting of metals and non-metals including ceramics.
Claim 17
Dependent Claim
90 words
The semiconductor device as claimed in any of claims 12 to 16, characterized in that the outer leads (2b) have an approximate S-shape, said package (7) has a bottom surface from which the bottom part of said radiator block (3) projects, each of said outer leads (2b) have a vertical length L1 from the bottom surface of said package towards a direction in which said radiator block projects, the bottom part of said radiator block projects a length L2 from the bottom surface of said package, and L1 > L2.
Claim 18
Dependent Claim
31 words
The semiconductor device as claimed in any of claims 12 to 17, characterized in that said radiator block (3) includes a plurality of slits (31) formed at the bottom part thereof.
Claim 19
Dependent Claim
35 words
The semiconductor device as claimed in any of claims 12 to 17, characterized in that said radiator block (3) includes engaging means (32) provided at the bottom part thereof for engaging an external radiator member.
Claim 20
Dependent Claim
40 words
The semiconductor device as claimed in any of claims 12 to 17, characterized in that the top surface part (33) of said radiator block (3) and the bottom part (34) of said radiator block are made of mutually different metals.
Claim 21
Dependent Claim
46 words
The semiconductor device as claimed in any of claims 12 to 17, characterized in that the top surface part of said radiator block (3) is made up of a metal layer (35), and the bottom part of said radiator block is made of a ceramic material.
References Cited (Backward Citations)
No citation records indexed.
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