EP0534459A2
Expired / Lapsed
EP
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A compound semiconductor, a method for producing a thin film thereof, and a semiconductor device having the thin film
Assignee: Panasonic Holdings Corp
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Filing: 1992-09-25
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Granted: —
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Expires: 2012-09-25
Abstract
Abstract Chalcopyrite compound semiconductor thin films represented by I-III-VI2-xVx or I-III-VI2-xVIIx, and semiconductor devices having a I-III-VI<6>/I-III-VI2-xVx or I-III-VI<6>/I-III-VI2-xVIIx chalcopyrite homojunction are provided. Such chalcopyrite compound semiconductor thin films are produced by radiating molecular beams or ion beams of the I, III, VI, and V or VII group elements simultaneously, or by doping I-III-VI<6> chalcopyrite thin films with VII-group atoms after the formation thereof. Pollution-free solar cells are also provided, which are formed by the steps of forming a structure of a lower electrode, a chalcopyrite semiconductor thin film, and an upper electrode and radiating accelerated ion beams of a V, VII, or VIII group element thereto. <IMAGE>
Inventors
- 👤 Shigemi Kohiki
- 👤 Takayuki Negami
- 👤 Mikihiko Nishitani
- 👤 Takahiro Wada
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-07 09:24
CPC Classifications
H; H10; H10F; H10F77/00; H10F77/10; H10F77/12; H10F10/00; H10F10/10; H10F10/14; H10F77/126; H10F77/1265; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02E10/541; Y02E10/547
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
11 words
A chalcopyrite compound semiconductor represented by I-III-VI 2-x V x .
Claim 2
Independent Claim
43 words
A method for producing a compound semiconductor thin film comprising the step of forming a chalcopyrite thin film represented by I-III-VI 2-x V x over a substrate in a vacuum chamber by use of beams of I, III, VI, and V group elements.
Claim 3
Dependent Claim
38 words
A method according to claim 2, wherein said step of forming the chalcopyrite thin film is carried out by use of molecular beams of I, III and VI groups and an ion beam of a V group element.
Claim 4
Dependent Claim
85 words
A method according to claim 2, wherein said step of forming the chalcopyrite thin film comprises the steps of: forming a first chalcopyrite thin film represented by I-III-VI₂ over the substrate by use of molecular beams of I, III and VI group elements; and forming a second chalcopyrite thin film represented by I-III-VI 2-x V x in the first chalcopyrite thin film by doping the first chalcopyrite thin film with a V group element by use of an ion beam of the V group element.
Claim 5
Dependent Claim
28 words
A semiconductor device having a chalcopyrite homojunction between a first chalcopyrite thin film represented by I-III-VI 2-x V x and a second chalcopyrite thin film represented by I-III-VI₂.
Claim 6
Dependent Claim
11 words
A chalcopyrite compound semiconductor represented by I-III-VI 2-x VII x .
Claim 7
Independent Claim
43 words
A method for producing a compound semiconductor thin film comprising the step of forming a chalcopyrite thin film represented by I-III-VI 2-x VII x on a substrate in a vacuum chamber by use of beams of I, III, VI, and VII group elements.
Claim 8
Dependent Claim
38 words
A method according to claim 2, wherein said step of forming the chalcopyrite thin film is carried out by use of molecular beams of I, III and VI groups and an ion beam of a VII group element.
Claim 9
Dependent Claim
85 words
A method according to claim 2, wherein said step of forming the chalcopyrite thin film comprises the steps of: forming a first chalcopyrite thin film represented by I-III-VI₂ over the substrate by use of molecular beams of I, III and VI group elements; and forming a second chalcopyrite thin film represented by I-III-VI 2-x VII x in the first chalcopyrite thin film by doping the first chalcopyrite thin film with a VII group element by use of an ion beam of the VII group element.
Claim 10
Dependent Claim
32 words
A semiconductor device having a chalcopyrite homojunction between a first chalcopyrite thin film represented by I-III-VI 2-x V x and a second chalcopyrite thin film represented by I-III-VI 2-x VII x .
Claim 11
Independent Claim
44 words
A method for producing a compound semiconductor thin film comprising the step of forming a chalcopyrite thin film represented by I-III-VI₂ over a substrate in a vacuum chamber by use of molecular beams or ion beams of I, III, VI, and VIII group elements.
Claim 12
Independent Claim
72 words
A method for fabricating an optoelectro transducer comprising the steps of: forming an electrode over an opaque substrate; forming a chalcopyrite thin film represented by I-III-VI₂ on the electrode; forming a transparent electrode on the chalcopyrite thin film; and forming a homojunction in the chalcopyrite thin film by doping the chalcopyrite thin film with ions of an element which is selected from the group of a V, VII, or VIII group element.
Claim 13
Independent Claim
73 words
A method for fabricating an optoelectro transducer comprising the steps of: forming a transparent electrode over the transparent substrate; forming a chalcopyrite thin film represented by I-III-VI₂ on the transparent electrode; forming an electrode on the chalcopyrite thin film; and forming a homojunction in the chalcopyrite thin film by doping the chalcopyrite thin film with ions of an element which is selected from the group of a V, VII, or VIII group element.
Claim 14
Dependent Claim
29 words
A semiconductor device having a chalcopyrite homojunction between a first chalcopyrite thin film represented by I-III-VI₂ and a second chalcopyrite thin film represented by I-III-VI 2-x VII x .
References Cited (Backward Citations)
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