EP0528684A2
Expired / Lapsed
EP
⏱️ 0.0 years remaining
Thin type semiconductor device
Assignee: Toshiba Corp
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Filing: 1992-08-19
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Granted: —
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Expires: 2012-08-19
Abstract
Abstract A plurality of electrodes (12) are formed on one surface of a semiconductor integrated circuit chip (10). A plurality of leads (14) are arranged around the chip (10). Each of the electrodes (12) and one end of each of the leads (14) are connected. The electrodes (12) and the chip (10) are sandwiched between two films (18, 20). One of the films (18) is in direct contact with the one surface of the chip (10). The other film (20) is in direct contact with the other surface of the chip (10).
Inventors
- 👤 Takao c/o Intellectual Pty Div. Fujitsu
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-28 21:25
CPC Classifications
H; H10; H10W; H10W70/00; H10W70/60; H10W70/67; H10W70/688; H10W40/00; H10W40/10; H10W40/20; H10W40/22; H10W42/00; H10W42/20; H10W42/261; H10W42/276; H10W70/40; H10W70/451; H10W70/479; H10W74/00; H10W74/10; H10W74/131; H10W74/144; H10W90/00; H10W90/811; H10W72/00; H10W72/071; H10W72/072; H10W72/07251; H10W72/20
Claims Analysis
Total Claims: 19
Claim 1
Independent Claim
101 words
A semiconductor device assembly comprising: a semiconductor chip (10, 10a, 10b) having first and second surfaces; a plurality of electrodes (12) on the first surface; a plurality of leads (14) arranged around the chip (10, 10a, 10b), each of the leads (14) having an end portion which contacts one of the electrodes (12); and first and second films (18, 20), the first film (18) directly contacting the first surface and the second film (20) directly contacting the second surface, the first and second films (18, 20) being on opposite sides of the semiconductor chip (10, 10a, 10b) and the leads (14).
Claim 2
Dependent Claim
37 words
The semiconductor device assembly according to claim 1, further comprising a lead support member (16, 16′) for supporting the leads (14), the lead support member (16, 16′) being between the first and the second films (18, 20).
Claim 3
Dependent Claim
27 words
The semiconductor device assembly according to claim 2, wherein the lead support member (16) includes means (38) for allowing deformation of the assembly from the external force.
Claim 4
Dependent Claim
30 words
The semiconductor device assembly according to claim 1, wherein the first film (18) includes an inorganic layer (22) and an adhesive layer (24, 24′) adhered to the inorganic layer (22).
Claim 5
Dependent Claim
20 words
The semiconductor device assembly according to claim 4, further comprising a protection layer (30) coated on the inorganic layer (22).
Claim 6
Dependent Claim
15 words
The semiconductor device assembly according to claim 4, wherein the inorganic layer (22) includes metal.
Claim 7
Dependent Claim
21 words
The semiconductor device assembly according to claim 6, further comprising a plurality of cooling fins (36) on the inorganic layer (22).
Claim 8
Dependent Claim
43 words
The semiconductor device assembly according to claim 6, wherein the inorganic layer (22) includes a periphery portion and an inner portion, the periphery portion being adhered to the leads (14), and the inner portion directly contacting the first surface of the chip (10).
Claim 9
Dependent Claim
30 words
The semiconductor device assembly according to claim 6, also includes means (40, 42, 44, 46, 52, 54) for electrically connecting one of the leads (14) to the inorganic layer (22).
Claim 10
Dependent Claim
39 words
The semiconductor device assembly according to claim 9, wherein the connecting means (40, 42, 44, 46, 52, 54) includes a conductive member through the adhesive layer (24) contacting the inorganic layer (22) and the one of the leads (14).
Claim 11
Dependent Claim
16 words
The semiconductor device assembly according to claim 10, wherein the conductive member comprises a conductive coating.
Claim 12
Dependent Claim
30 words
The semiconductor device assembly according to claim 1, wherein the second film includes an inorganic layer (26) and an adhesive layer (28, 28′, 58) adhered to the inorganic layer (26).
Claim 13
Dependent Claim
20 words
The semiconductor device assembly according to claim 12, further comprising a protection layer (32) coated on the inorganic layer (26).
Claim 14
Dependent Claim
15 words
The semiconductor device assembly according to claim 12, wherein the inorganic layer (26) includes metal.
Claim 15
Dependent Claim
43 words
The semiconductor device assembly according to claim 14, wherein the inorganic layer (26) includes a periphery portion and an inner portion, the periphery portion being adhered to the leads (14), and the inner portion directly contacting the second surface of the chip (10).
Claim 16
Dependent Claim
29 words
The semiconductor device assembly according to claim 14, also includes means (40, 42, 48, 50, 56) for electrically connecting one of the leads (14) to the inorganic layer (26).
Claim 17
Dependent Claim
39 words
The semiconductor device assembly according to claim 16, wherein the connecting means (40, 42, 48, 50, 56) includes a conductive member through the adhesive layer (28, 58) contacting the inorganic layer (26) and the one of the leads (14).
Claim 18
Dependent Claim
16 words
The semiconductor device assembly according to claim 17, wherein the conductive member comprises a conductive coating.
Claim 19
Dependent Claim
162 words
A semiconductor device assembly comprising: a first semiconductor chip (10a) having first and second surfaces; a second semiconductor chip (10b) having third and fourth surfaces; first and second electrodes (12) on the first surface; third and fourth electrodes (12) on the third surface; a first lead (14) having a first end portion which contacts the first electrode (12); a second lead (14) having a second end portion which contacts the fourth electrode (12); a third lead (34) having a third end portion which contacts the second electrode (12), and a fourth end portion which contacts the third electrode (12); and first and second films (18, 20), the first film (18) directly contacting the first and the third surfaces, and the second film (20) directly contacting the second and the fourth surfaces, the first and second films (18, 20) being on opposite sides of the first and second semiconductor chips (10a, 10b) and the first, the second and the third leads (14, 34).
References Cited (Backward Citations)
No citation records indexed.
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