Avalanche diode in a bipolar integrated circuit

Abstract

Abstract The invention relates to an avalanche diode formed in a bipolar integrated circuit comprising, in a N layer (20), A first P region (22), a N region (21) arranged inside the first region so that the portion of the first region arranged under the N region and in the vicinity of the interface with the latter exhibits a first doping level, a second P region (23) extending under the N region with a second doping level greater than the first in the vicinity of the junction, and a third P region (30) arranged under the N region and overlapping with respect to the second P region, this third region having, at its interface with the N region, a doping level which is intermediate between the first and second doping levels. <IMAGE>

Inventors

• 👤 Jean-Michel Moreau

Bibliographic Details