EP0515181A2
Expired / Lapsed
EP
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Method for preparing semiconductor member
Assignee: Canon Inc
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Filing: 1992-05-21
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Granted: —
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Expires: 2012-05-21
Abstract
Abstract A method for preparing a semiconductor member comprises process of making a porous Si substrate and then forming a non-porous Si monocrystalline layer on the porous Si substrate; primary bonding process of bonding the porous Si substrate and an insulating substrate via the non-porous Si monocrystalline layer; etching process of etching the porous Si to remove the porous Si by chemical etching after the primary bonding process; and secondary bonding process of strengthening the primary bonding after the etching process.
Inventors
- 👤 Kiyofumi C/O Canon Kabushiki Kaisha Sakaguchi
- 👤 Takao C/O Canon Kabushiki Kaisha Yonehara
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-01 19:56
CPC Classifications
H; H10; H10P; H10P90/00; H10P90/19; H10P90/1904; H10P90/1906; H10P90/1922; H10P14/00; H10P14/20; H10P14/22; H10P14/24; H10P14/29; H10P14/2901; H10P14/2902; H10P14/2905; H10P14/2922; H10P14/32; H10P14/3202; H10P14/3204; H10P14/3211; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411; H10P90/12; H10P90/15; H10P90/191; H10P90/1914; H10W; H10W10/00; H10W10/10; H10W10/181; Y; Y10; Y10S; Y10S438/00; Y10S438/96; Y10S438/977
Claims Analysis
Total Claims: 28
Claim 1
Independent Claim
82 words
A method for preparing a semiconductor member, characterized by comprising: process of making a porous Si substrate and then forming a non-porous Si monocrystalline layer on said porous Si substrate; primary bonding process of bonding the porous Si substrate and an insulating substrate via the non-porous Si monocrystalline layer; etching process of etching said porous Si to remove said porous Si by chemical etching after said primary bonding process; and secondary bonding process of strengthening the primary bonding after said etching process.
Claim 2
Independent Claim
87 words
A method for preparing a semiconductor member characterized by comprising: process of making porous Si substrate and then forming a non-porous Si monocrystalline layer on said porous Si substrate; primary bonding process of bonding said porous Si substrate and an insulating substrate via said non-porous Si monocrystalline layer; etching process of etching said porous Si to remove said porous Si by chemical etching immersing said substrate in hydrofluoric acid after said primary bonding process; and secondary bonding process of strengthening the primary bonding after said etching process.
Claim 3
Independent Claim
92 words
A method for preparing a semiconductor member characterized by comprising: process of making a porous Si substrate and then forming a non-porous Si monocrystalline layer on said porous Si substrate; primary bonding process of bonding said porous Si substrate and an insulating substrate via said non-porous Si monocrystalline layer; etching process of etching said porous Si to remove said porous Si by etching immersing said substrate in a mixture containing hydrofluoric acid and alcohol after said primary bonding process; and secondary bonding process of strengthening the primary bonding after said etching process.
Claim 4
Independent Claim
94 words
A method for preparing a semiconductor member characterized by comprising: process of making a porous Si substrate and then forming a non-porous Si monocrystalline layer on said porous Si substrate; primary bonding process of bonding said porous Si substrate and an insulating substrate via said non-porous Si monocrystalline layer; etching process of etching said porous Si to remove said porous Si by chemical etching immersing said substrate in a mixture containing hydrofluoric acid and hydrogen peroxide after said primary bonding process; and secondary bonding process of strengthening the primary bonding after said etching process.
Claim 5
Independent Claim
95 words
A method for preparing a semiconductor member characterized by comprising: process of making a porous Si substrate and then forming a non-porous Si monocrystalline layer on said porous Si substrate; primary bonding process of bonding said porous Si substrate and an insulating substrate via said non-porous Si monocrystalline layer; etching process of etching said porous Si to remove said porous Si by chemical etching immersing said substrate in a mixture containing hydrofluoric acid, alcohol and hydrogen peroxide after said primary bonding process; and secondary bonding process of strengthening the primary bonding after said etching process.
Claim 6
Independent Claim
102 words
A method for preparing a semiconductor member characterized by comprising: process of making a porous Si substrate and then forming a non-porous Si monocrystalline layer on said porous Si substrate; primary bonding process of bonding said porous Si substrate and an insulating substrate via said non-porous Si monocrystalline layer; etching process of etching said porous Si to remove said porous Si by chemical etching immersing said substrate in a mixture containing buffered hydrofluoric acid (a mixed aqueous solution of hydrofluoric acid and ammonium fluoride) after said primary bonding process; and secondary bonding process of strengthening the primary bonding after said etching process.
Claim 7
Independent Claim
104 words
A method for preparing a semiconductor member characterized by comprising: process of making a porous Si substrate and then forming a non-porous Si monocrystalline layer on said porous Si substrate; primary bonding process of bonding said porous Si substrate and an insulating substrate via said non-porous Si monocrystalline layer; etching process of etching said porous Si to remove said porous Si by chemical etching immersing said substrate in a mixture containing buffered hydrofluoric acid (a mixed aqueous solution of hydrofluoric acid and ammonium fluoride) and alcohol after the primary bonding process; and secondary bonding process of strengthening the primary bonding after said etching process.
Claim 8
Independent Claim
105 words
A method for preparing a semiconductor member characterized by comprising: process of making a porous Si substrate and then forming a non-porous Si monocrystalline layer on said porous Si substrate; primary bonding process of bonding said porous Si substrate and an insulating substrate via said non-porous Si monocrystalline layer; etching process of etching said porous Si to remove said porous Si by chemical etching immersing said substrate in a mixture containing buffered hydrofluoric acid (a mixed aqueous solution of hydrofluoric acid and ammonium fluoride) and hydrogen peroxide after said primary bonding process; and secondary bonding process of strengthening the primary bonding after said etching process.
Claim 9
Independent Claim
106 words
A method for preparing a semiconductor member characterized by comprising: process of making a porous Si substrate and then forming a non-porous Si monocrystalline layer on said porous Si substrate; primary bonding process of bonding said porous Si substrate and an insulating substrate via said non-porous Si monocrystalline layer; etching process of etching said porous Si to remove said porous Si by chemical etching immersing said substrate in a mixture containing buffered hydrofluoric acid (a mixed aqueous solution of hydrofluoric acid and ammonium fluoride), alcohol and hydrogen peroxide after said primary bonding process; and secondary bonding process of strengthening the primary bonding after said etching process.
Claim 10
Independent Claim
85 words
A method for preparing a semiconductor member characterized by comprising: process of making a porous Si substrate with a non-porous Si monocrystalline layer being left on one surface layer of said porous Si substrate; primary bonding process of bonding said porous Si substrate and an insulating substrate via said Si monocrystalline layer; etching process of etching said porous Si to remove said porous Si by chemical etching after said primary bonding process; and secondary bonding process of strengthening the primary bonding after said etching process.
Claim 11
Independent Claim
57 words
The method for preparing a semiconductor member according to any one of claims 1 to 9, wherein said non-porous Si monocrystalline layer is formed by a method selected from a molecular beam epitaxial method, a plasma CVD method, a photo CVD method, a low pressure CVD method, a liquid phase growth method, and a bias sputter method.
Claim 12
Independent Claim
38 words
The method for preparing a semiconductor member according to any one of claims 1 to 10, wherein after the surface of said non-porous Si monocrystalline layer is oxidized, said primary bonding process is performed interposing an oxidized membrane.
Claim 13
Independent Claim
43 words
The method for preparing a semiconductor member according to any one of claims 1 to 10, wherein after all the surface except for said porous Si face is covered with an anti-etching film, said etching process for removing said porous Si is performed.
Claim 14
Independent Claim
30 words
The method for preparing a semiconductor member according to any one of claims 1 to 10, wherein the thickness of said non-porous Si monocrystalline layer is 100 micron or less.
Claim 15
Independent Claim
81 words
The method for preparing a semiconductor member according to any one of claims 1 to 10, characterized in that said primary bonding process further includes placing a substrate having said porous Si and said insulating substrate into contact with each other at the room temperature to bond them to a degree of pulling against each other due to a Van der Waals force, without yielding any stress due to a difference between thermal expansion coefficients of materials forming the contact face.
Claim 16
Independent Claim
39 words
The method for preparing a semiconductor member according to any one of claims 1 to 10, wherein said primary bonding process with the contact includes a heating process of heating to a degree that bonded interfaces may not exfoliate.
Claim 17
Independent Claim
28 words
The method for preparing a semiconductor member according to any one of claims 1 to 10, characterized in that said secondary bonding process is performed by heat treatment.
Claim 18
Independent Claim
30 words
The method for preparing a semiconductor member according to any one of claims 1 to 10, wherein said secondary bonding process further includes a heating process in an oxygen atmosphere.
Claim 19
Independent Claim
30 words
The method for preparing a semiconductor member according to any one of claims 1 to 10, wherein said secondary bonding process further includes a heating process in a nitrogen atmosphere.
Claim 20
Independent Claim
33 words
The method for preparing a semiconductor member according to any one of claims 1 to 10, characterized in that said non-porous Si monocrystalline layer is an Si epitaxial layer formed by epitaxial growth.
Claim 21
Independent Claim
33 words
The method for preparing a semiconductor member according to any one of claims 1 to 10, wherein said porous region is a P-type, or an N-type highly dense enough to realize the porosity.
Claim 22
Independent Claim
24 words
The method for preparing a semiconductor member according to any one of claims 1 to 10, wherein said process of making porosity is anodization.
Claim 23
Dependent Claim
20 words
The method for preparing a semiconductor member according to claim 22, wherein said anodization is performed in an HF solution.
Claim 24
Independent Claim
24 words
The method for preparing a semiconductor member according to any one of claims 1 to 10, wherein said insulating substrate is a light-transparent substrate.
Claim 25
Dependent Claim
20 words
The method for preparing a semiconductor member according to claim 24, wherein said light-transparent substrate is a light-transparent glass substrate.
Claim 26
Dependent Claim
32 words
The method for preparing a semiconductor member according to claim 10, characterized in that non-porous Si monocrystalline layer left on one surface layer of said Si substrate is a high-resistance Si layer.
Claim 27
Dependent Claim
32 words
The method for preparing a semiconductor member according to claim 10, characterized in that non-porous Si monocrystalline layer left on one surface layer of said Si substrate is an N-type Si layer.
Claim 28
Dependent Claim
33 words
The method for preparing a semiconductor member according to claim 10, characterized in that said non-porous Si monocrystalline layer is formed by a method selected from proton irradiation, counter doping, and epitaxial growth.
References Cited (Backward Citations)
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